Berthold Reimer

Person

Dresden, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Field-effect transistors with a grown silicon-germanium channel
- Patent number 10,559,593
- Issue date Feb 11, 2020
- GLOBALFOUNDRIES Inc.
- Carsten Metze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor wafer having an SOI configu...
- Patent number 9,842,762
- Issue date Dec 12, 2017
- GLOBALFOUNDRIES Inc.
- Berthold Reimer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for etching dielectric materials in the fabrication of inte...
- Patent number 9,054,041
- Issue date Jun 9, 2015
- GLOBALFOUNDRIES, INC.
- Johannes von Kluge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superior integrity of a high-K gate stack by forming a controlled u...
- Patent number 8,951,901
- Issue date Feb 10, 2015
- GLOBALFOUNDRIES Inc.
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a semiconductor device by performing a wet acid...
- Patent number 8,815,674
- Issue date Aug 26, 2014
- GLOBALFOUNDRIES Inc.
- Berthold Reimer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor structure including a wet etch pr...
- Patent number 8,716,136
- Issue date May 6, 2014
- GLOBALFOUNDRIES Inc.
- Berthold Reimer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for PFET fabrication using APM solutions
- Patent number 8,703,620
- Issue date Apr 22, 2014
- GLOBALFOUNDRIES, INC.
- Joanna Wasyluk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for pFET fabrication using APM solutions
- Patent number 8,658,543
- Issue date Feb 25, 2014
- GLOBALFOUNDRIES, INC.
- Joanna Wasyluk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of controlling the etching of silicon nitride relative to s...
- Patent number 8,580,133
- Issue date Nov 12, 2013
- GLOBALFOUNDRIES Inc.
- Berthold Reimer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Maintaining integrity of a high-K gate stack by passivation using a...
- Patent number 8,524,591
- Issue date Sep 3, 2013
- GLOBALFOUNDRIES Inc.
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Uniform high-k metal gate stacks by adjusting threshold voltage for...
- Patent number 8,445,344
- Issue date May 21, 2013
- GLOBALFOUNDRIES Inc.
- Richard Carter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for exposing a placeholder material in a replacement gate...
- Patent number 8,357,575
- Issue date Jan 22, 2013
- GLOBALFOUNDRIES Inc.
- Klaus Hempel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced etch stop capability during patterning of silicon nitride...
- Patent number 8,283,232
- Issue date Oct 9, 2012
- GLOBALFOUNDRIES Inc.
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for exposing a placeholder material in a replacement gate...
- Patent number 8,247,281
- Issue date Aug 21, 2012
- GLOBALFOUNDRIES, INC.
- Klaus Hempel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing contamination in a process flow of forming a channel semic...
- Patent number 8,048,748
- Issue date Nov 1, 2011
- GLOBALFOUNDRIES Inc.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FIELD-EFFECT TRANSISTORS WITH A GROWN SILICON-GERMANIUM CHANNEL
- Publication number 20200051808
- Publication date Feb 13, 2020
- GLOBALFOUNDRIES INC.
- Carsten Metze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR ETCHING DIELECTRIC MATERIALS IN THE FABRICATION OF INTE...
- Publication number 20150235906
- Publication date Aug 20, 2015
- GLOBALFOUNDRIES, Inc.
- Johannes von Kluge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPERIOR INTEGRITY OF A HIGH-K GATE STACK BY FORMING A CONTROLLED U...
- Publication number 20150137270
- Publication date May 21, 2015
- GLOBALFOUNDRIES INC.
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR ETCHING DIELECTRIC MATERIALS IN THE FABRICATION OF INTE...
- Publication number 20150024578
- Publication date Jan 22, 2015
- GLOBALFOUNDRIES, Inc.
- Johannes von Kluge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING A SEMICONDUCTOR DEVICE BY PERFORMING A WET ACID...
- Publication number 20140227869
- Publication date Aug 14, 2014
- GLOBALFOUNDRIES INC.
- Berthold Reimer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR STRUCTURE INCLUDING A WET ETCH PR...
- Publication number 20140113455
- Publication date Apr 24, 2014
- GLOBALFOUNDRIES INC.
- Berthold Reimer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TMAH RECESS FOR SILICON GERMANIUM IN POSITIVE CHANNEL REGION FOR CM...
- Publication number 20130299874
- Publication date Nov 14, 2013
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Joanna Wasyluk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR PFET FABRICATION USING APM SOLUTIONS
- Publication number 20130203244
- Publication date Aug 8, 2013
- GLOBALFOUNDRIES INC.
- Joanna Wasyluk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR PFET FABRICATION USING APM SOLUTIONS
- Publication number 20130203245
- Publication date Aug 8, 2013
- GLOBALFOUNDRIES INC.
- Joanna WASYLUK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Patterning of Sensitive Metal-Containing Layers With Superior Mask...
- Publication number 20130126984
- Publication date May 23, 2013
- GLOBALFOUNDRIES INC.
- Berthold Reimer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Controlling the Etching of Silicon Nitride Relative to S...
- Publication number 20130122716
- Publication date May 16, 2013
- GLOBALFOUNDRIES INC.
- Berthold Reimer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUE FOR EXPOSING A PLACEHOLDER MATERIAL IN A REPLACEMENT GATE...
- Publication number 20120282764
- Publication date Nov 8, 2012
- Klaus Hempel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Superior Integrity of a High-K Gate Stack by Forming a Controlled U...
- Publication number 20120086056
- Publication date Apr 12, 2012
- GLOBALFOUNDRIES INC.
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING CONTAMINATION IN A PROCESS FLOW OF FORMING A CHANNEL SEMIC...
- Publication number 20110189831
- Publication date Aug 4, 2011
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAINTAINING INTEGRITY OF A HIGH-K GATE STACK BY PASSIVATION USING A...
- Publication number 20110049585
- Publication date Mar 3, 2011
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNIFORM HIGH-K METAL GATE STACKS BY ADJUSTING THRESHOLD VOLTAGE FOR...
- Publication number 20100327373
- Publication date Dec 30, 2010
- Richard Carter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUE FOR EXPOSING A PLACEHOLDER MATERIAL IN A REPLACEMENT GATE...
- Publication number 20100330790
- Publication date Dec 30, 2010
- Klaus Hempel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED ETCH STOP CAPABILITY DURING PATTERNING OF SILICON NITRIDE...
- Publication number 20100304542
- Publication date Dec 2, 2010
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS

Berthold Reimer

Person

Patents Grantslast 30 patents

Field-effect transistors with a grown silicon-germanium channel

Method of manufacturing a semiconductor wafer having an SOI configu...

Methods for etching dielectric materials in the fabrication of inte...

Superior integrity of a high-K gate stack by forming a controlled u...

Methods of forming a semiconductor device by performing a wet acid...

Method of forming a semiconductor structure including a wet etch pr...

Methods for PFET fabrication using APM solutions

Methods for pFET fabrication using APM solutions

Methods of controlling the etching of silicon nitride relative to s...

Maintaining integrity of a high-K gate stack by passivation using a...

Uniform high-k metal gate stacks by adjusting threshold voltage for...

Technique for exposing a placeholder material in a replacement gate...

Enhanced etch stop capability during patterning of silicon nitride...

Technique for exposing a placeholder material in a replacement gate...

Reducing contamination in a process flow of forming a channel semic...

Patents Applicationslast 30 patents

FIELD-EFFECT TRANSISTORS WITH A GROWN SILICON-GERMANIUM CHANNEL

METHODS FOR ETCHING DIELECTRIC MATERIALS IN THE FABRICATION OF INTE...

SUPERIOR INTEGRITY OF A HIGH-K GATE STACK BY FORMING A CONTROLLED U...

METHODS FOR ETCHING DIELECTRIC MATERIALS IN THE FABRICATION OF INTE...

METHODS OF FORMING A SEMICONDUCTOR DEVICE BY PERFORMING A WET ACID...

METHOD OF FORMING A SEMICONDUCTOR STRUCTURE INCLUDING A WET ETCH PR...

TMAH RECESS FOR SILICON GERMANIUM IN POSITIVE CHANNEL REGION FOR CM...

METHODS FOR PFET FABRICATION USING APM SOLUTIONS

METHODS FOR PFET FABRICATION USING APM SOLUTIONS

Patterning of Sensitive Metal-Containing Layers With Superior Mask...

Methods of Controlling the Etching of Silicon Nitride Relative to S...

TECHNIQUE FOR EXPOSING A PLACEHOLDER MATERIAL IN A REPLACEMENT GATE...

Superior Integrity of a High-K Gate Stack by Forming a Controlled U...

REDUCING CONTAMINATION IN A PROCESS FLOW OF FORMING A CHANNEL SEMIC...

MAINTAINING INTEGRITY OF A HIGH-K GATE STACK BY PASSIVATION USING A...

UNIFORM HIGH-K METAL GATE STACKS BY ADJUSTING THRESHOLD VOLTAGE FOR...

TECHNIQUE FOR EXPOSING A PLACEHOLDER MATERIAL IN A REPLACEMENT GATE...

ENHANCED ETCH STOP CAPABILITY DURING PATTERNING OF SILICON NITRIDE...