Bertrand F. Cambou

Person

Mesa, AZ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of making symmetrical and asymmetrical MESFETS
- Patent number 5,512,499
- Issue date Apr 30, 1996
- Motorola, Inc,
- Bertrand F. Cambou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit for sensing an environmental condition and produ...
- Patent number 5,493,248
- Issue date Feb 20, 1996
- Motorola, Inc.
- William C. Dunn
- G01 - MEASURING TESTING
Information Patent Grant
Method of making semiconductor device having a short gate length
- Patent number 5,449,628
- Issue date Sep 12, 1995
- Motorola, Inc.
- Bertrand F. Cambou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical and lateral isolation for a semiconductor device
- Patent number 5,444,289
- Issue date Aug 22, 1995
- Motorola
- Bertrand F. Cambou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical and lateral isolation for a semiconductor device
- Patent number 5,389,569
- Issue date Feb 14, 1995
- Motorola, Inc.
- Bertrand F. Cambou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of bonding silicon and III-V semiconductor materials
- Patent number 5,346,848
- Issue date Sep 13, 1994
- Motorola, Inc.
- Melissa E. Grupen-Shemansky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Microprocessor having environmental sensing capability
- Patent number 5,291,607
- Issue date Mar 1, 1994
- Motorola, Inc.
- Ljubisa Ristic
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Semiconductor device including very low sheet resistivity buried layer
- Patent number 5,283,454
- Issue date Feb 1, 1994
- Motorola, Inc.
- Bertrand Cambou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a short gate length
- Patent number 5,281,839
- Issue date Jan 25, 1994
- Motorola, Inc.
- Bertrand F. Cambou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-silicon and silicon bonded structure and method of manufacture
- Patent number 5,281,834
- Issue date Jan 25, 1994
- Motorola, Inc.
- Bertrand F. Cambou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a dielectric isolated area
- Patent number 5,091,330
- Issue date Feb 25, 1992
- Motorola, Inc.
- Bertrand F. Cambou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure for high power integrated circuits
- Patent number 5,070,382
- Issue date Dec 3, 1991
- Motorola, Inc.
- Bertrand Cambou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating integrated silicon and non-silicon semiconduc...
- Patent number 5,064,781
- Issue date Nov 12, 1991
- Motorola, Inc.
- Bertrand F. Cambou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for making a bipolar integrated circuit
- Patent number 4,902,633
- Issue date Feb 20, 1990
- Motorola, Inc.
- Bertrand F. Cambou
- H01 - BASIC ELECTRIC ELEMENTS

Bertrand F. Cambou

Person

Patents Grantslast 30 patents

Method of making symmetrical and asymmetrical MESFETS

Integrated circuit for sensing an environmental condition and produ...

Method of making semiconductor device having a short gate length

Vertical and lateral isolation for a semiconductor device

Vertical and lateral isolation for a semiconductor device

Method of bonding silicon and III-V semiconductor materials

Microprocessor having environmental sensing capability

Semiconductor device including very low sheet resistivity buried layer

Semiconductor device having a short gate length

Non-silicon and silicon bonded structure and method of manufacture

Method of fabricating a dielectric isolated area

Semiconductor structure for high power integrated circuits

Method of fabricating integrated silicon and non-silicon semiconduc...

Process for making a bipolar integrated circuit