Bhagwati PRASAD

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Ferroelectric field effect transistors having enhanced memory windo...
- Patent number 11,996,462
- Issue date May 28, 2024
- SanDisk Technologies LLC
- Bhagwati Prasad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Voltage-controlled magnetic anisotropy memory device including an a...
- Patent number 11,887,640
- Issue date Jan 30, 2024
- Western Digital Technologies, Inc.
- Derek Stewart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Voltage-controlled magnetic anisotropy memory device including an a...
- Patent number 11,889,702
- Issue date Jan 30, 2024
- Western Digital Technologies, Inc.
- Alan Kalitsov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Voltage-controlled magnetic anisotropy memory device including an a...
- Patent number 11,871,679
- Issue date Jan 9, 2024
- Western Digital Technologies, Inc.
- Alan Kalitsov
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive memory device including a plurality of reference l...
- Patent number 11,839,162
- Issue date Dec 5, 2023
- Western Digital Technologies, Inc.
- Alan Kalitsov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric field effect transistors having enhanced memory windo...
- Patent number 11,545,506
- Issue date Jan 3, 2023
- SanDisk Technologies LLC
- Bhagwati Prasad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Antiferroelectric memory devices and methods of making the same
- Patent number 11,502,104
- Issue date Nov 15, 2022
- SanDisk Technologies LLC
- Bhagwati Prasad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spinel containing magnetic tunnel junction and method of making the...
- Patent number 11,443,790
- Issue date Sep 13, 2022
- Western Digital Technologies, Inc.
- Bhagwati Prasad
- G11 - INFORMATION STORAGE
Information Patent Grant
Antiferroelectric memory devices and methods of making the same
- Patent number 11,430,813
- Issue date Aug 30, 2022
- SanDisk Technologies LLC
- Bhagwati Prasad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction memory devices employing resonant tunnelin...
- Patent number 11,417,379
- Issue date Aug 16, 2022
- SanDisk Technologies LLC
- Alan Kalitsov
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction memory devices employing resonant tunnelin...
- Patent number 11,411,170
- Issue date Aug 9, 2022
- SanDisk Technologies LLC
- Alan Kalitsov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive memory device including a magnesium containing dus...
- Patent number 11,404,632
- Issue date Aug 2, 2022
- Western Digital Technologies, Inc.
- Bhagwati Prasad
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive memory device including a magnesium containing dus...
- Patent number 11,404,193
- Issue date Aug 2, 2022
- Western Digital Technologies, Inc.
- Bhagwati Prasad
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive memory device including a reference layer side die...
- Patent number 11,361,805
- Issue date Jun 14, 2022
- Western Digital Technologies, Inc.
- Goran Mihajlovic
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction memory devices employing resonant tunnelin...
- Patent number 11,349,066
- Issue date May 31, 2022
- SanDisk Technologies LLC
- Alan Kalitsov
- G11 - INFORMATION STORAGE
Information Patent Grant
Multiferroic-assisted voltage controlled magnetic anisotropy memory...
- Patent number 11,276,446
- Issue date Mar 15, 2022
- Western Digital Technologies, Inc.
- Bhagwati Prasad
- G11 - INFORMATION STORAGE
Information Patent Grant
Multiferroic-assisted voltage controlled magnetic anisotropy memory...
- Patent number 11,264,562
- Issue date Mar 1, 2022
- Western Digital Technologies, Inc.
- Bhagwati Prasad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic device including multiferroic regions and methods of formi...
- Patent number 11,222,920
- Issue date Jan 11, 2022
- Western Digital Technologies, Inc.
- Bhagwati Prasad
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Spinel containing magnetic tunnel junction and method of making the...
- Patent number 11,217,289
- Issue date Jan 4, 2022
- Western Digital Technologies, Inc.
- Bhagwati Prasad
- G01 - MEASURING TESTING
Information Patent Grant
Tunneling metamagnetic resistance memory device and methods of oper...
- Patent number 11,200,934
- Issue date Dec 14, 2021
- Western Digital Technologies, Inc.
- Bhagwati Prasad
- G11 - INFORMATION STORAGE
Information Patent Grant
Spinel containing magnetic tunnel junction and method of making the...
- Patent number 11,176,981
- Issue date Nov 16, 2021
- Western Digital Technologies, Inc.
- Bhagwati Prasad
- G11 - INFORMATION STORAGE
Information Patent Grant
Tunneling metamagnetic resistance memory device and methods of oper...
- Patent number 11,152,048
- Issue date Oct 19, 2021
- Western Digital Technologies, Inc.
- Bhagwati Prasad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Data storage device with voltage-assisted magnetic recording (VAMR)...
- Patent number 11,087,791
- Issue date Aug 10, 2021
- Western Digital Technologies, Inc.
- Alan Kalitsov
- G11 - INFORMATION STORAGE
Information Patent Grant
Electric field controllable spin filter tunnel junction magnetoresi...
- Patent number 11,069,741
- Issue date Jul 20, 2021
- Western Digital Technologies, Inc.
- Bhagwati Prasad
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive memory device including a high dielectric constant...
- Patent number 11,056,640
- Issue date Jul 6, 2021
- Western Digital Technologies, Inc.
- Bhagwati Prasad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Voltage-controlled interlayer exchange coupling magnetoresistive me...
- Patent number 11,049,538
- Issue date Jun 29, 2021
- Western Digital Technologies, Inc.
- Alan Kalitsov
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive memory device including a high dielectric constant...
- Patent number 11,005,034
- Issue date May 11, 2021
- Western Digital Technologies, Inc.
- Bhagwati Prasad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive memory device including a high dielectric constant...
- Patent number 10,991,407
- Issue date Apr 27, 2021
- Western Digital Technologies, Inc.
- Bhagwati Prasad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electric field controllable spin filter tunnel junction magnetoresi...
- Patent number 10,964,748
- Issue date Mar 30, 2021
- Western Digital Technologies, Inc.
- Bhagwati Prasad
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric device with multiple polarization states and method o...
- Patent number 10,957,711
- Issue date Mar 23, 2021
- SanDisk Technologies LLC
- Bhagwati Prasad
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
MEMORY DEVICE CONTAINING COMPOSITION-CONTROLLED FERROELECTRIC MEMOR...
- Publication number 20240064991
- Publication date Feb 22, 2024
- SANDISK TECHNOLOGIES LLC
- Kartik SONDHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE CONTAINING COMPOSITION-CONTROLLED FERROELECTRIC MEMOR...
- Publication number 20240064992
- Publication date Feb 22, 2024
- SANDISK TECHNOLOGIES LLC
- Rahul SHARANGPANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE MEMORY DEVICE AND METHOD OF OPERATING SAME USING P...
- Publication number 20230307029
- Publication date Sep 28, 2023
- SANDISK TECHNOLOGIES LLC
- Alan KALITSOV
- G11 - INFORMATION STORAGE
Information Patent Application
VOLTAGE CONTROLLED MAGNETIC ANISOTROPY (VCMA) MEMORY DEVICES INCLUD...
- Publication number 20230107190
- Publication date Apr 6, 2023
- WESTERN DIGITAL TECHNOLOGIES, INC.,
- Alan KALITSOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VOLTAGE-CONTROLLED MAGNETIC ANISOTROPY MEMORY DEVICE INCLUDING AN A...
- Publication number 20220393100
- Publication date Dec 8, 2022
- WESTERN DIGITAL TECHNOLOGIES, INC.,
- Alan KALITSOV
- G11 - INFORMATION STORAGE
Information Patent Application
VOLTAGE-CONTROLLED MAGNETIC ANISOTROPY MEMORY DEVICE INCLUDING AN A...
- Publication number 20220392505
- Publication date Dec 8, 2022
- WESTERN DIGITAL TECHNOLOGIES, INC.,
- Derek STEWART
- G11 - INFORMATION STORAGE
Information Patent Application
VOLTAGE-CONTROLLED MAGNETIC ANISOTROPY MEMORY DEVICE INCLUDING AN A...
- Publication number 20220392953
- Publication date Dec 8, 2022
- WESTERN DIGITAL TECHNOLOGIES, INC.,
- Alan KALITSOV
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC FIELD EFFECT TRANSISTORS HAVING ENHANCED MEMORY WINDO...
- Publication number 20220157852
- Publication date May 19, 2022
- SANDISK TECHNOLOGIES LLC
- Bhagwati PRASAD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC FIELD EFFECT TRANSISTORS HAVING ENHANCED MEMORY WINDO...
- Publication number 20220157966
- Publication date May 19, 2022
- SANDISK TECHNOLOGIES LLC
- Bhagwati PRASAD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION MEMORY DEVICES EMPLOYING RESONANT TUNNELIN...
- Publication number 20220130442
- Publication date Apr 28, 2022
- SANDISK TECHNOLOGIES LLC
- Alan KALITSOV
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION MEMORY DEVICES EMPLOYING RESONANT TUNNELIN...
- Publication number 20220131067
- Publication date Apr 28, 2022
- SANDISK TECHNOLOGIES LLC
- Alan KALITSOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION MEMORY DEVICES EMPLOYING RESONANT TUNNELIN...
- Publication number 20220131068
- Publication date Apr 28, 2022
- SANDISK TECHNOLOGIES LLC
- Alan KALITSOV
- G11 - INFORMATION STORAGE
Information Patent Application
MULTIFERROIC-ASSISTED VOLTAGE CONTROLLED MAGNETIC ANISOTROPY MEMORY...
- Publication number 20220069200
- Publication date Mar 3, 2022
- WESTERN DIGITAL TECHNOLOGIES, INC.,
- Bhagwati PRASAD
- G11 - INFORMATION STORAGE
Information Patent Application
MULTIFERROIC-ASSISTED VOLTAGE CONTROLLED MAGNETIC ANISOTROPY MEMORY...
- Publication number 20220068337
- Publication date Mar 3, 2022
- Western Digital Technologies, Inc.
- Bhagwati PRASAD
- G01 - MEASURING TESTING
Information Patent Application
SPINEL CONTAINING MAGNETIC TUNNEL JUNCTION AND METHOD OF MAKING THE...
- Publication number 20220036934
- Publication date Feb 3, 2022
- WESTERN DIGITAL TECHNOLOGIES, INC.,
- Bhagwati PRASAD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNNELING METAMAGNETIC RESISTANCE MEMORY DEVICE AND METHODS OF OPER...
- Publication number 20210327483
- Publication date Oct 21, 2021
- WESTERN DIGITAL TECHNOLOGIES, INC.,
- Bhagwati PRASAD
- G11 - INFORMATION STORAGE
Information Patent Application
TUNNELING METAMAGNETIC RESISTANCE MEMORY DEVICE AND METHODS OF OPER...
- Publication number 20210327484
- Publication date Oct 21, 2021
- WESTERN DIGITAL TECHNOLOGIES, INC.,
- Bhagwati PRASAD
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE MEMORY DEVICE INCLUDING A PLURALITY OF REFERENCE L...
- Publication number 20210320245
- Publication date Oct 14, 2021
- WESTERN DIGITAL TECHNOLOGIES, INC.,
- Alan KALITSOV
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC DEVICE INCLUDING MULTIFERROIC REGIONS AND METHODS OF FORMI...
- Publication number 20210242279
- Publication date Aug 5, 2021
- WESTERN DIGITAL TECHNOLOGIES, INC.,
- Bhagwati PRASAD
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MAGNETORESISTIVE MEMORY DEVICE INCLUDING A REFERENCE LAYER SIDE DIE...
- Publication number 20210225421
- Publication date Jul 22, 2021
- WESTERN DIGITAL TECHNOLOGIES, INC.,
- Goran MIHAJLOVIC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE MEMORY DEVICE INCLUDING A MAGNESIUM CONTAINING DUS...
- Publication number 20210210676
- Publication date Jul 8, 2021
- WESTERN DIGITAL TECHNOLOGIES, INC.,
- Bhagwati PRASAD
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE MEMORY DEVICE INCLUDING A MAGNESIUM CONTAINING DUS...
- Publication number 20210210677
- Publication date Jul 8, 2021
- WESTERN DIGITAL TECHNOLOGIES, INC.,
- Bhagwati PRASAD
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE MEMORY DEVICE INCLUDING A HIGH DIELECTRIC CONSTANT...
- Publication number 20210159392
- Publication date May 27, 2021
- WESTERN DIGITAL TECHNOLOGIES, INC.,
- Bhagwati PRASAD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE MEMORY DEVICE INCLUDING A HIGH DIELECTRIC CONSTANT...
- Publication number 20210159391
- Publication date May 27, 2021
- WESTERN DIGITAL TECHNOLOGIES, INC.,
- Bhagwati PRASAD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRIC FIELD CONTROLLABLE SPIN FILTER TUNNEL JUNCTION MAGNETORESI...
- Publication number 20210151501
- Publication date May 20, 2021
- Western Digital Technologies, Inc.
- Bhagwati PRASAD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANTIFERROELECTRIC MEMORY DEVICES AND METHODS OF MAKING THE SAME
- Publication number 20210074727
- Publication date Mar 11, 2021
- SANDISK TECHNOLOGIES LLC
- Bhagwati PRASAD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANTIFERROELECTRIC MEMORY DEVICES AND METHODS OF MAKING THE SAME
- Publication number 20210066348
- Publication date Mar 4, 2021
- SANDISK TECHNOLOGIES LLC
- Bhagwati PRASAD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VOLTAGE-CONTROLLED INTERLAYER EXCHANGE COUPLING MAGNETORESISTIVE ME...
- Publication number 20200234748
- Publication date Jul 23, 2020
- Western Digital Technologies, Inc.
- Alan KALITSOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC DEVICE WITH MULTIPLE POLARIZATION STATES AND METHOD O...
- Publication number 20200203380
- Publication date Jun 25, 2020
- SANDISK TECHNOLOGIES LLC
- Bhagwati PRASAD
- H01 - BASIC ELECTRIC ELEMENTS

Bhagwati PRASAD

Person

Patents Grantslast 30 patents

Ferroelectric field effect transistors having enhanced memory windo...

Voltage-controlled magnetic anisotropy memory device including an a...

Voltage-controlled magnetic anisotropy memory device including an a...

Voltage-controlled magnetic anisotropy memory device including an a...

Magnetoresistive memory device including a plurality of reference l...

Ferroelectric field effect transistors having enhanced memory windo...

Antiferroelectric memory devices and methods of making the same

Spinel containing magnetic tunnel junction and method of making the...

Antiferroelectric memory devices and methods of making the same

Magnetic tunnel junction memory devices employing resonant tunnelin...

Magnetic tunnel junction memory devices employing resonant tunnelin...

Magnetoresistive memory device including a magnesium containing dus...

Magnetoresistive memory device including a magnesium containing dus...

Magnetoresistive memory device including a reference layer side die...

Magnetic tunnel junction memory devices employing resonant tunnelin...

Multiferroic-assisted voltage controlled magnetic anisotropy memory...

Multiferroic-assisted voltage controlled magnetic anisotropy memory...

Magnetic device including multiferroic regions and methods of formi...

Spinel containing magnetic tunnel junction and method of making the...

Tunneling metamagnetic resistance memory device and methods of oper...

Spinel containing magnetic tunnel junction and method of making the...

Tunneling metamagnetic resistance memory device and methods of oper...

Data storage device with voltage-assisted magnetic recording (VAMR)...

Electric field controllable spin filter tunnel junction magnetoresi...

Magnetoresistive memory device including a high dielectric constant...

Voltage-controlled interlayer exchange coupling magnetoresistive me...

Magnetoresistive memory device including a high dielectric constant...

Magnetoresistive memory device including a high dielectric constant...

Electric field controllable spin filter tunnel junction magnetoresi...

Ferroelectric device with multiple polarization states and method o...

Patents Applicationslast 30 patents

MEMORY DEVICE CONTAINING COMPOSITION-CONTROLLED FERROELECTRIC MEMOR...

MEMORY DEVICE CONTAINING COMPOSITION-CONTROLLED FERROELECTRIC MEMOR...

MAGNETORESISTIVE MEMORY DEVICE AND METHOD OF OPERATING SAME USING P...

VOLTAGE CONTROLLED MAGNETIC ANISOTROPY (VCMA) MEMORY DEVICES INCLUD...

VOLTAGE-CONTROLLED MAGNETIC ANISOTROPY MEMORY DEVICE INCLUDING AN A...

VOLTAGE-CONTROLLED MAGNETIC ANISOTROPY MEMORY DEVICE INCLUDING AN A...

VOLTAGE-CONTROLLED MAGNETIC ANISOTROPY MEMORY DEVICE INCLUDING AN A...

FERROELECTRIC FIELD EFFECT TRANSISTORS HAVING ENHANCED MEMORY WINDO...

FERROELECTRIC FIELD EFFECT TRANSISTORS HAVING ENHANCED MEMORY WINDO...

MAGNETIC TUNNEL JUNCTION MEMORY DEVICES EMPLOYING RESONANT TUNNELIN...

MAGNETIC TUNNEL JUNCTION MEMORY DEVICES EMPLOYING RESONANT TUNNELIN...

MAGNETIC TUNNEL JUNCTION MEMORY DEVICES EMPLOYING RESONANT TUNNELIN...

MULTIFERROIC-ASSISTED VOLTAGE CONTROLLED MAGNETIC ANISOTROPY MEMORY...

MULTIFERROIC-ASSISTED VOLTAGE CONTROLLED MAGNETIC ANISOTROPY MEMORY...

SPINEL CONTAINING MAGNETIC TUNNEL JUNCTION AND METHOD OF MAKING THE...

TUNNELING METAMAGNETIC RESISTANCE MEMORY DEVICE AND METHODS OF OPER...

TUNNELING METAMAGNETIC RESISTANCE MEMORY DEVICE AND METHODS OF OPER...

MAGNETORESISTIVE MEMORY DEVICE INCLUDING A PLURALITY OF REFERENCE L...

MAGNETIC DEVICE INCLUDING MULTIFERROIC REGIONS AND METHODS OF FORMI...

MAGNETORESISTIVE MEMORY DEVICE INCLUDING A REFERENCE LAYER SIDE DIE...

MAGNETORESISTIVE MEMORY DEVICE INCLUDING A MAGNESIUM CONTAINING DUS...

MAGNETORESISTIVE MEMORY DEVICE INCLUDING A MAGNESIUM CONTAINING DUS...

MAGNETORESISTIVE MEMORY DEVICE INCLUDING A HIGH DIELECTRIC CONSTANT...

MAGNETORESISTIVE MEMORY DEVICE INCLUDING A HIGH DIELECTRIC CONSTANT...

ELECTRIC FIELD CONTROLLABLE SPIN FILTER TUNNEL JUNCTION MAGNETORESI...

ANTIFERROELECTRIC MEMORY DEVICES AND METHODS OF MAKING THE SAME

ANTIFERROELECTRIC MEMORY DEVICES AND METHODS OF MAKING THE SAME

VOLTAGE-CONTROLLED INTERLAYER EXCHANGE COUPLING MAGNETORESISTIVE ME...

FERROELECTRIC DEVICE WITH MULTIPLE POLARIZATION STATES AND METHOD O...