Bhaskar Nagabhirava

Person

Albany, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Polymerization protective liner for reactive ion etch in patterning
- Patent number 12,237,175
- Issue date Feb 25, 2025
- Lam Research Corporation
- Bhaskar Nagabhirava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for selectively etching with reduced aspect ratio dependence
- Patent number 10,541,141
- Issue date Jan 21, 2020
- Lam Research Corporation
- Adarsh Basavalingappa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for selectively etching with reduced aspect ratio dependence
- Patent number 10,037,890
- Issue date Jul 31, 2018
- Lam Research Corporation
- Adarsh Basavalingappa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for selectively etching silicon oxide with respect to an org...
- Patent number 10,002,773
- Issue date Jun 19, 2018
- Lam Research Corporation
- Bhaskar Nagabhirava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Highly selective oxygen free silicon nitride etch
- Patent number 9,412,609
- Issue date Aug 9, 2016
- Lam Research Corporation
- Bhaskar Nagabhirava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pulsed dielectric etch process for in-situ metal hard mask shape co...
- Patent number 8,906,810
- Issue date Dec 9, 2014
- Lam Research Corporation
- Ananth Indrakanti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of etching self-aligned vias and trenches in a multi-layer f...
- Patent number 8,668,835
- Issue date Mar 11, 2014
- Lam Research Corporation
- Ananth Indrakanti
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MULTI-LAYER HARDMASK FOR DEFECT REDUCTION IN EUV PATTERNING
- Publication number 20230343593
- Publication date Oct 26, 2023
- LAM RESEARCH CORPORATION
- Bhaskar NAGABHIRAVA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLYMERIZATION PROTECTIVE LINER FOR REACTIVE ION ETCH IN PATTERNING
- Publication number 20220238349
- Publication date Jul 28, 2022
- LAM RESEARCH CORPORATION
- Bhaskar Nagabhirava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR SELECTIVELY ETCHING WITH REDUCED ASPECT RATIO DEPENDENCE
- Publication number 20180330959
- Publication date Nov 15, 2018
- LAM RESEARCH CORPORATION
- Adarsh BASAVALINGAPPA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR SELECTIVELY ETCHING SILICON OXIDE WITH RESPECT TO AN ORG...
- Publication number 20180102257
- Publication date Apr 12, 2018
- LAM RESEARCH CORPORATION
- Bhaskar NAGABHIRAVA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR SELECTIVELY ETCHING WITH REDUCED ASPECT RATIO DEPENDENCE
- Publication number 20180102253
- Publication date Apr 12, 2018
- LAM RESEARCH CORPORATION
- Adarsh BASAVALINGAPPA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIDEWALL HEIGHT NONUNIFORMITY REDUCTION FOR SIDEWALL IMAGE TRANSFER...
- Publication number 20150155176
- Publication date Jun 4, 2015
- LAM RESEARCH CORPORATION
- Yann MIGNOT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PULSED DIELECTRIC ETCH PROCESS FOR IN-SITU METAL HARD MASK SHAPE CO...
- Publication number 20140335697
- Publication date Nov 13, 2014
- LAM RESEARCH CORPORATION
- Ananth Indrakanti
- H01 - BASIC ELECTRIC ELEMENTS

Bhaskar Nagabhirava

Person

Patents Grantslast 30 patents

Polymerization protective liner for reactive ion etch in patterning

Method for selectively etching with reduced aspect ratio dependence

Method for selectively etching with reduced aspect ratio dependence

Method for selectively etching silicon oxide with respect to an org...

Highly selective oxygen free silicon nitride etch

Pulsed dielectric etch process for in-situ metal hard mask shape co...

Method of etching self-aligned vias and trenches in a multi-layer f...

Patents Applicationslast 30 patents

MULTI-LAYER HARDMASK FOR DEFECT REDUCTION IN EUV PATTERNING

POLYMERIZATION PROTECTIVE LINER FOR REACTIVE ION ETCH IN PATTERNING

METHOD FOR SELECTIVELY ETCHING WITH REDUCED ASPECT RATIO DEPENDENCE

METHOD FOR SELECTIVELY ETCHING SILICON OXIDE WITH RESPECT TO AN ORG...

METHOD FOR SELECTIVELY ETCHING WITH REDUCED ASPECT RATIO DEPENDENCE

SIDEWALL HEIGHT NONUNIFORMITY REDUCTION FOR SIDEWALL IMAGE TRANSFER...

PULSED DIELECTRIC ETCH PROCESS FOR IN-SITU METAL HARD MASK SHAPE CO...