Bi-Shen Lee

Person

Hsin-Chu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Wakeup free approach to improve the ferroelectricity of FeRAM using...
- Patent number 12,160,995
- Issue date Dec 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bi-Shen Lee
Information Patent Grant
Ferroelectric memory device and method of manufacturing the same
- Patent number 12,137,572
- Issue date Nov 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi Yang Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped sidewall spacer/etch stop layer for memory
- Patent number 12,127,483
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bi-Shen Lee
Information Patent Grant
Memory window of MFM MOSFET for small cell size
- Patent number 12,075,626
- Issue date Aug 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hai-Dang Trinh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric random access memory device with seed layer
- Patent number 12,069,867
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bi-Shen Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interface film to mitigate size effect of memory device
- Patent number 12,035,537
- Issue date Jul 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bi-Shen Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilayer structure, capacitor structure and electronic device
- Patent number 11,967,611
- Issue date Apr 23, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Hai-Dang Trinh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer electrode to improve performance of ferroelectric memor...
- Patent number 11,916,127
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi Yang Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory cell with switching layer comprising one or more d...
- Patent number 11,895,933
- Issue date Feb 6, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fa-Shen Jiang
Information Patent Grant
FeRAM with laminated ferroelectric film and method forming same
- Patent number 11,844,226
- Issue date Dec 12, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bi-Shen Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wakeup free approach to improve the ferroelectricity of FeRAM using...
- Patent number 11,737,280
- Issue date Aug 22, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bi-Shen Lee
Information Patent Grant
Memory window of MFM MOSFET for small cell size
- Patent number 11,723,212
- Issue date Aug 8, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hai-Dang Trinh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FeRAM with laminated ferroelectric film and method forming same
- Patent number 11,665,909
- Issue date May 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bi-Shen Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory cell having a low forming voltage
- Patent number 11,527,717
- Issue date Dec 13, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hai-Dang Trinh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Top electrode via with low contact resistance
- Patent number 11,527,713
- Issue date Dec 13, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bi-Shen Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory cell with switching layer comprising one or more d...
- Patent number 11,430,951
- Issue date Aug 30, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fa-Shen Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-doped data storage structure configured to improve resistive...
- Patent number 11,404,638
- Issue date Aug 2, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bi-Shen Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric random access memory device with seed layer
- Patent number 11,393,833
- Issue date Jul 19, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bi-Shen Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RRAM device with improved performance
- Patent number 11,165,021
- Issue date Nov 2, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fa-Shen Jiang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTERFACE FILM TO MITIGATE SIZE EFFECT OF MEMORY DEVICE
- Publication number 20240381663
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bi-Shen Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferroelectric Memory Device and Method of Manufacturing the Same
- Publication number 20240381664
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi Yang Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED SIDEWALL SPACER/ETCH STOP LAYER FOR MEMORY
- Publication number 20240373760
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bi-Shen Lee
Information Patent Application
IMPROVE MEMORY WINDOW OF MFM MOSFET FOR SMALL CELL SIZE
- Publication number 20240357835
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hai-Dang Trinh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC RANDOM ACCESS MEMORY DEVICE WITH SEED LAYER
- Publication number 20240334709
- Publication date Oct 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bi-Shen Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY CELL WITH SWITCHING LAYER COMPRISING ONE OR MORE D...
- Publication number 20240138272
- Publication date Apr 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fa-Shen Jiang
Information Patent Application
FeRAM with Laminated Ferroelectric Film and Method Forming Same
- Publication number 20240064998
- Publication date Feb 22, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bi-Shen Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYER ELECTRODE TO IMPROVE PERFORMANCE OF FERROELECTRIC MEMOR...
- Publication number 20240021700
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi Yang Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERFACE FILM TO MITIGATE SIZE EFFECT OF MEMORY DEVICE
- Publication number 20240023344
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bi-Shen Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEEP TRENCH ISOLATION STRUCTURE AND METHODS FOR FABRICATION THEREOF
- Publication number 20230402487
- Publication date Dec 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bi-Shen LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTILAYER STRUCTURE, CAPACITOR STRUCTURE AND ELECTRONIC DEVICE
- Publication number 20230387190
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- HAI-DANG TRINH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20230354717
- Publication date Nov 2, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- BI-SHEN LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAKEUP FREE APPROACH TO IMPROVE THE FERROELECTRICITY OF FERAM USING...
- Publication number 20230354613
- Publication date Nov 2, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bi-Shen Lee
Information Patent Application
MEMORY WINDOW OF MFM MOSFET FOR SMALL CELL SIZE
- Publication number 20230320103
- Publication date Oct 5, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hai-Dang Trinh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYER ELECTRODE TO IMPROVE PERFORMANCE OF FERROELECTRIC MEMOR...
- Publication number 20220406916
- Publication date Dec 22, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi Yang Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED SIDEWALL SPACER/ETCH STOP LAYER FOR MEMORY
- Publication number 20220393101
- Publication date Dec 8, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bi-Shen Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FeRAM with Laminated Ferroelectric Film and Method Forming Same
- Publication number 20220392906
- Publication date Dec 8, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bi-Shen Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY CELL HAVING A LOW FORMING VOLTAGE
- Publication number 20220367810
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hai-Dang Trinh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERFACE FILM TO MITIGATE SIZE EFFECT OF MEMORY DEVICE
- Publication number 20220367493
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bi-Shen Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TOP ELECTRODE VIA WITH LOW CONTACT RESISTANCE
- Publication number 20220359823
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bi-Shen Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY CELL WITH SWITCHING LAYER COMPRISING ONE OR MORE D...
- Publication number 20220336739
- Publication date Oct 20, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fa-Shen Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-DOPED DATA STORAGE STRUCTURE CONFIGURED TO IMPROVE RESISTIVE...
- Publication number 20220336737
- Publication date Oct 20, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bi-Shen Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC RANDOM ACCESS MEMORY DEVICE WITH SEED LAYER
- Publication number 20220320123
- Publication date Oct 6, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bi-Shen Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY WINDOW OF MFM MOSFET FOR SMALL CELL SIZE
- Publication number 20220310635
- Publication date Sep 29, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hai-Dang Trinh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAKEUP FREE APPROACH TO IMPROVE THE FERROELECTRICITY OF FERAM USING...
- Publication number 20220285374
- Publication date Sep 8, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bi-Shen Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferroelectric Memory Device and Method of Manufacturing the Same
- Publication number 20220278115
- Publication date Sep 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi Yang Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RRAM DEVICE WITH IMPROVED PERFORMANCE
- Publication number 20220052260
- Publication date Feb 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fa-Shen Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-DOPED DATA STORAGE STRUCTURE CONFIGURED TO IMPROVE RESISTIVE...
- Publication number 20220037589
- Publication date Feb 3, 2022
- Taiwan Semiconductor Manufacturing Co., LTD
- Bi-Shen Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FeRAM with Laminated Ferroelectric Film and Method Forming Same
- Publication number 20220028874
- Publication date Jan 27, 2022
- Taiwan Semiconductor Manufacturing Co, LTD.
- Bi-Shen Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY CELL WITH SWITCHING LAYER COMPRISING ONE OR MORE D...
- Publication number 20210336135
- Publication date Oct 28, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Fa-Shen Jiang
- H01 - BASIC ELECTRIC ELEMENTS

Bi-Shen Lee

Person

Patents Grantslast 30 patents

Wakeup free approach to improve the ferroelectricity of FeRAM using...

Ferroelectric memory device and method of manufacturing the same

Doped sidewall spacer/etch stop layer for memory

Memory window of MFM MOSFET for small cell size

Ferroelectric random access memory device with seed layer

Interface film to mitigate size effect of memory device

Multilayer structure, capacitor structure and electronic device

Multi-layer electrode to improve performance of ferroelectric memor...

Resistive memory cell with switching layer comprising one or more d...

FeRAM with laminated ferroelectric film and method forming same

Wakeup free approach to improve the ferroelectricity of FeRAM using...

Memory window of MFM MOSFET for small cell size

FeRAM with laminated ferroelectric film and method forming same

Resistive memory cell having a low forming voltage

Top electrode via with low contact resistance

Resistive memory cell with switching layer comprising one or more d...

Multi-doped data storage structure configured to improve resistive...

Ferroelectric random access memory device with seed layer

RRAM device with improved performance

Patents Applicationslast 30 patents

INTERFACE FILM TO MITIGATE SIZE EFFECT OF MEMORY DEVICE

Ferroelectric Memory Device and Method of Manufacturing the Same

DOPED SIDEWALL SPACER/ETCH STOP LAYER FOR MEMORY

IMPROVE MEMORY WINDOW OF MFM MOSFET FOR SMALL CELL SIZE

FERROELECTRIC RANDOM ACCESS MEMORY DEVICE WITH SEED LAYER

RESISTIVE MEMORY CELL WITH SWITCHING LAYER COMPRISING ONE OR MORE D...

FeRAM with Laminated Ferroelectric Film and Method Forming Same

MULTI-LAYER ELECTRODE TO IMPROVE PERFORMANCE OF FERROELECTRIC MEMOR...

INTERFACE FILM TO MITIGATE SIZE EFFECT OF MEMORY DEVICE

DEEP TRENCH ISOLATION STRUCTURE AND METHODS FOR FABRICATION THEREOF

MULTILAYER STRUCTURE, CAPACITOR STRUCTURE AND ELECTRONIC DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

WAKEUP FREE APPROACH TO IMPROVE THE FERROELECTRICITY OF FERAM USING...

MEMORY WINDOW OF MFM MOSFET FOR SMALL CELL SIZE

MULTI-LAYER ELECTRODE TO IMPROVE PERFORMANCE OF FERROELECTRIC MEMOR...

DOPED SIDEWALL SPACER/ETCH STOP LAYER FOR MEMORY

FeRAM with Laminated Ferroelectric Film and Method Forming Same

RESISTIVE MEMORY CELL HAVING A LOW FORMING VOLTAGE

INTERFACE FILM TO MITIGATE SIZE EFFECT OF MEMORY DEVICE

TOP ELECTRODE VIA WITH LOW CONTACT RESISTANCE

RESISTIVE MEMORY CELL WITH SWITCHING LAYER COMPRISING ONE OR MORE D...

MULTI-DOPED DATA STORAGE STRUCTURE CONFIGURED TO IMPROVE RESISTIVE...

FERROELECTRIC RANDOM ACCESS MEMORY DEVICE WITH SEED LAYER

MEMORY WINDOW OF MFM MOSFET FOR SMALL CELL SIZE

WAKEUP FREE APPROACH TO IMPROVE THE FERROELECTRICITY OF FERAM USING...

Ferroelectric Memory Device and Method of Manufacturing the Same

RRAM DEVICE WITH IMPROVED PERFORMANCE

MULTI-DOPED DATA STORAGE STRUCTURE CONFIGURED TO IMPROVE RESISTIVE...

FeRAM with Laminated Ferroelectric Film and Method Forming Same

RESISTIVE MEMORY CELL WITH SWITCHING LAYER COMPRISING ONE OR MORE D...