Bin Wang

Person

Seattle, WA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Throttling and prioritization of multiple data streams
- Patent number 11,356,289
- Issue date Jun 7, 2022
- Microsoft Technology Licensing, LLC
- Arash Ghanaie-Sichanie
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Throttling and prioritization for multichannel audio and/or multipl...
- Patent number 10,771,272
- Issue date Sep 8, 2020
- Microsoft Technology Licensing, LLC
- Arash Ghanaie-Sichanie
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
High-voltage LDMOSFET and applications therefor in standard CMOS
- Patent number 8,264,039
- Issue date Sep 11, 2012
- Synopsys, Inc.
- Bin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Graded junction high voltage semiconductor device
- Patent number 8,159,001
- Issue date Apr 17, 2012
- Synopsys, Inc.
- Bin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inverter non-volatile memory cell and array system
- Patent number 7,791,950
- Issue date Sep 7, 2010
- Virage Logic Corporation
- Bin Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-level non-volatile memory cell with high-VT enhanced BTBT device
- Patent number 7,652,921
- Issue date Jan 26, 2010
- Virage Logic Corporation
- Andrew E. Horch
- G11 - INFORMATION STORAGE
Information Patent Grant
High voltage FET gate structure
- Patent number 7,375,398
- Issue date May 20, 2008
- Impinj, Inc.
- Bin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Native high-voltage n-channel LDMOSFET in standard logic CMOS
- Patent number 7,315,067
- Issue date Jan 1, 2008
- Impinj, Inc.
- Bin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compact non-volatile memory cell and array system
- Patent number 7,263,001
- Issue date Aug 28, 2007
- Impinj, Inc.
- Bin Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Inverter non-volatile memory cell and array system
- Patent number 7,257,033
- Issue date Aug 14, 2007
- Impinj, Inc.
- Bin Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Graded-junction high-voltage MOSFET in standard logic CMOS
- Patent number 7,145,203
- Issue date Dec 5, 2006
- Impinj, Inc.
- Bin Wang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
THROTTLING AND PRIORITIZATION OF MULTIPLE DATA STREAMS
- Publication number 20210135896
- Publication date May 6, 2021
- Microsoft Technology Licensing, LLC
- Arash Ghanaie-Sichanie
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
Multi-level non-volatile memory cell with high-VT enhanced BTBT device
- Publication number 20080279013
- Publication date Nov 13, 2008
- Impini, Inc.
- Andrew H. Horch
- G11 - INFORMATION STORAGE
Information Patent Application
INVERTER NON-VOLATILE MEMORY CELL AND ARRAY SYSTEM
- Publication number 20070263456
- Publication date Nov 15, 2007
- Impinj, Inc.
- Bin Wang
- G11 - INFORMATION STORAGE
Information Patent Application
Graded junction high voltage semiconductor device
- Publication number 20070093028
- Publication date Apr 26, 2007
- Impinj, Inc.
- Bin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
System and methods for retention-enhanced programmable shared gate...
- Publication number 20060226489
- Publication date Oct 12, 2006
- Impinj, Inc.
- Bin Wang
- G11 - INFORMATION STORAGE
Information Patent Application
Tunneling-enhanced floating gate semiconductor device
- Publication number 20060220096
- Publication date Oct 5, 2006
- Impinj, Inc.
- Bin Wang
- G11 - INFORMATION STORAGE
Information Patent Application
Compact non-volatile memory cell and array system
- Publication number 20060209597
- Publication date Sep 21, 2006
- Impinj, Inc.
- Bin Wang
- G11 - INFORMATION STORAGE
Information Patent Application
Inverter non-volatile memory cell and array system
- Publication number 20060209598
- Publication date Sep 21, 2006
- Impinj, Inc.
- Bin Wang
- G11 - INFORMATION STORAGE
Information Patent Application
Native high-voltage n-channel LDMOSFET in standard logic CMOS
- Publication number 20060001087
- Publication date Jan 5, 2006
- Impinj, Inc., a Delaware Corporation
- Bin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High voltage FET gate structure
- Publication number 20060001050
- Publication date Jan 5, 2006
- Impinj, Inc.
- Bin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-voltage LDMOSFET and applications therefor in standard CMOS
- Publication number 20050258461
- Publication date Nov 24, 2005
- Impinj, Inc., a Delaware Corporation
- Bin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Graded-junction high-voltage MOSFET in standard logic CMOS
- Publication number 20050236666
- Publication date Oct 27, 2005
- Impinj, Inc., a Delaware Corporation
- Bin Wang
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Throttling and prioritization of multiple data streams

Throttling and prioritization for multichannel audio and/or multipl...

High-voltage LDMOSFET and applications therefor in standard CMOS

Graded junction high voltage semiconductor device

Inverter non-volatile memory cell and array system

Multi-level non-volatile memory cell with high-VT enhanced BTBT device

High voltage FET gate structure

Native high-voltage n-channel LDMOSFET in standard logic CMOS

Compact non-volatile memory cell and array system

Inverter non-volatile memory cell and array system

Graded-junction high-voltage MOSFET in standard logic CMOS

Patents Applicationslast 30 patents

THROTTLING AND PRIORITIZATION OF MULTIPLE DATA STREAMS

Multi-level non-volatile memory cell with high-VT enhanced BTBT device

INVERTER NON-VOLATILE MEMORY CELL AND ARRAY SYSTEM

Graded junction high voltage semiconductor device

System and methods for retention-enhanced programmable shared gate...

Tunneling-enhanced floating gate semiconductor device

Compact non-volatile memory cell and array system

Inverter non-volatile memory cell and array system

Native high-voltage n-channel LDMOSFET in standard logic CMOS

High voltage FET gate structure

High-voltage LDMOSFET and applications therefor in standard CMOS

Graded-junction high-voltage MOSFET in standard logic CMOS