Bin Yang

Person

San Diego, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
P-type field effect transistor (PFET) on a silicon germanium (Ge) b...
- Patent number 12,224,347
- Issue date Feb 11, 2025
- QUALCOMM Incorporated
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET semiconductor device
- Patent number 12,206,001
- Issue date Jan 21, 2025
- QUALCOMM Incorporated
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
One transistor one magnetic tunnel junction multiple bit magnetores...
- Patent number 12,108,610
- Issue date Oct 1, 2024
- QUALCOMM Incorporated
- Xia Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional (3D) interconnect structures employing via layer...
- Patent number 12,057,394
- Issue date Aug 6, 2024
- QUALCOMM Incorporated
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional (3D) vertical spiral inductor and transformer
- Patent number 12,051,534
- Issue date Jul 30, 2024
- QUALCOMM Incorporated
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mitigation of duty-cycle distortion
- Patent number 11,881,862
- Issue date Jan 23, 2024
- QUALCOMM Incorporated
- Udayakiran Kumar Yallamaraju
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Static random-access memory (SRAM) compute in-memory integration
- Patent number 11,776,608
- Issue date Oct 3, 2023
- QUALCOMM Incorporated
- Xia Li
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Fin field-effect transistor (FinFET) static random access memory (S...
- Patent number 11,744,059
- Issue date Aug 29, 2023
- QUALCOMM Incorporated
- Xia Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Three dimensional (3D) double gate semiconductor
- Patent number 11,710,789
- Issue date Jul 25, 2023
- QUALCOMM Incorporated
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V compound semiconductor dies with stress-treated inactive surf...
- Patent number 11,545,404
- Issue date Jan 3, 2023
- QUALCOMM Incorporated
- Gengming Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet (NS) and fin field-effect transistor (FinFET) hybrid inte...
- Patent number 11,545,483
- Issue date Jan 3, 2023
- QUALCOMM Incorporated
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dynamic aging monitor and correction for critical path duty cycle a...
- Patent number 11,533,045
- Issue date Dec 20, 2022
- QUALCOMM Incorporated
- Xia Li
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Heterojunction bipolar transistor with field plates
- Patent number 11,515,406
- Issue date Nov 29, 2022
- QUALCOMM Incorporated
- Gengming Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Distributed feedback (DFB) laser on silicon and integrated device c...
- Patent number 11,437,781
- Issue date Sep 6, 2022
- QUALCOMM Incorporated
- Gengming Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated device comprising transistor coupled to a dummy gate con...
- Patent number 11,404,414
- Issue date Aug 2, 2022
- QUALCOMM Incorporated
- Haining Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device implemented with buried rails
- Patent number 11,393,819
- Issue date Jul 19, 2022
- QUALCOMM Incorporated
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate all around transistors with high charge mobility channel mater...
- Patent number 11,222,952
- Issue date Jan 11, 2022
- QUALCOMM Incorporated
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertically stacked multilayer high-density RRAM
- Patent number 11,201,193
- Issue date Dec 14, 2021
- QUALCOMM Incorporated
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thermal paths for glass substrates
- Patent number 11,177,065
- Issue date Nov 16, 2021
- QUALCOMM Incorporated
- Kai Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric transistor
- Patent number 11,139,315
- Issue date Oct 5, 2021
- QUALCOMM Incorporated
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power performance gallium nitride high electron mobility trans...
- Patent number 10,971,615
- Issue date Apr 6, 2021
- QUALCOMM Incorporated
- Gengming Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced active and passive devices for radio frequency (RF) proces...
- Patent number 10,930,730
- Issue date Feb 23, 2021
- QUALCOMM Incorporated
- Ye Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for thermal matching of integrated circuits
- Patent number 10,923,436
- Issue date Feb 16, 2021
- QUALCOMM Incorporated
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of vertical GaN varactor with HEMT
- Patent number 10,896,981
- Issue date Jan 19, 2021
- QUALCOMM Incorporated
- Gengming Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of vertical GaN varactor with HEMT
- Patent number 10,886,266
- Issue date Jan 5, 2021
- QUALCOMM Incorporated
- Gengming Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance source/drain regions in III-V transistors
- Patent number 10,868,161
- Issue date Dec 15, 2020
- QUALCOMM Incorporated
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power compound semiconductor field effect transistor devices w...
- Patent number 10,756,206
- Issue date Aug 25, 2020
- QUALCOMM Incorporated
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with metal gate having dielectric portion over i...
- Patent number 10,756,085
- Issue date Aug 25, 2020
- QUALCOMM Incorporated
- Ye Lu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Heterojunction bipolar transistors with field plates
- Patent number 10,749,017
- Issue date Aug 18, 2020
- QUALCOMM Incorporated
- Gengming Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin-film variable metal-oxide-semiconductor (MOS) capacitor for pa...
- Patent number 10,741,702
- Issue date Aug 11, 2020
- QUALCOMM Incorporated
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED CIRCUIT (IC) PACKAGE WITH EMBEDDED POWER MANAGEMENT INTE...
- Publication number 20250239522
- Publication date Jul 24, 2025
- QUALCOMM Incorporated
- Xia LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS WITH TWO-SIDE METALLIZATION AND EXTERNAL STIFFE...
- Publication number 20250079337
- Publication date Mar 6, 2025
- QUALCOMM Incorporated
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTORS (FETS) EMPLOYING THERMAL EXPANSION OF WORK...
- Publication number 20240413219
- Publication date Dec 12, 2024
- QUALCOMM Incorporated
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE WITH MULTIPLE CORE LAYERS TO PROVIDE VARIED THICKNESS CAV...
- Publication number 20240355747
- Publication date Oct 24, 2024
- QUALCOMM Incorporated
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK-END-OF-LINE (BEOL) INTERCONNECTS WITH DIFFERENT AIRGAP HEIGHTS...
- Publication number 20240321631
- Publication date Sep 26, 2024
- QUALCOMM Incorporated
- Xia LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPTIMIZATION OF VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR INTEGRATION
- Publication number 20240234418
- Publication date Jul 11, 2024
- QUALCOMM Incorporated
- Xia LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPTIMIZATION OF VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR INTEGRATION
- Publication number 20240136357
- Publication date Apr 25, 2024
- QUALCOMM Incorporated
- Xia LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
2D-MATERIAL GATE-ALL-AROUND COMPLEMENTARY FET INTEGRATION
- Publication number 20240055429
- Publication date Feb 15, 2024
- QUALCOMM Incorporated
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHIC THREE-DIMENSIONAL (3D) COMPLEMENTARY FIELD EFFECT TRANSI...
- Publication number 20240047455
- Publication date Feb 8, 2024
- QUALCOMM Incorporated
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED COMPLEMENTARY FIELD EFFECT TRANSISTOR (CFET) AND METHOD OF...
- Publication number 20240021586
- Publication date Jan 18, 2024
- QUALCOMM Incorporated
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL (3D) INTERCONNECT STRUCTURES EMPLOYING VIA LAYER...
- Publication number 20230061693
- Publication date Mar 2, 2023
- QUALCOMM Incorporated
- Xia LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MITIGATION OF DUTY-CYCLE DISTORTION
- Publication number 20230058318
- Publication date Feb 23, 2023
- QUALCOMM Incorporated
- Udayakiran Kumar YALLAMARAJU
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
THREE DIMENSIONAL (3D) DOUBLE GATE SEMICONDUCTOR
- Publication number 20230008615
- Publication date Jan 12, 2023
- QUALCOMM Incorporated
- Xia LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ONE TRANSISTOR ONE MAGNETIC TUNNEL JUNCTION MULTIPLE BIT MAGNETORES...
- Publication number 20220359611
- Publication date Nov 10, 2022
- QUALCOMM Incorporated
- Xia LI
- G11 - INFORMATION STORAGE
Information Patent Application
THREE DIMENSIONAL (3D) VERTICAL SPIRAL INDUCTOR AND TRANSFORMER
- Publication number 20220328237
- Publication date Oct 13, 2022
- QUALCOMM Incorporated
- Xia LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER DECOUPLING METAL-INSULATOR-METAL CAPACITOR
- Publication number 20220293513
- Publication date Sep 15, 2022
- QUALCOMM Incorporated
- Xia LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-TYPE FIELD EFFECT TRANSISTOR (PFET) ON A SILICON GERMANIUM (GE) B...
- Publication number 20220271162
- Publication date Aug 25, 2022
- QUALCOMM Incorporated
- Bin YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED LOW RESISTANCE BURIED POWER RAIL THROUGH SINGLE DIFFUS...
- Publication number 20220173039
- Publication date Jun 2, 2022
- QUALCOMM Incorporated
- Bin YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-CHANNEL GATE-ALL-AROUND HIGH-ELECTRON-MOBILITY TRANSISTOR
- Publication number 20220131013
- Publication date Apr 28, 2022
- QUALCOMM Incorporated
- Chenjie TANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH DENSITY METAL-INSULATOR-METAL CAPACITOR
- Publication number 20220123101
- Publication date Apr 21, 2022
- QUALCOMM Incorporated
- Xia LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE-SIDE BACK-END-OF-LINE METALLIZATION FOR PSEUDO THROUGH-SILIC...
- Publication number 20220020665
- Publication date Jan 20, 2022
- QUALCOMM Incorporated
- Xia LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE IMPLEMENTED WITH BURIED RAILS
- Publication number 20220013522
- Publication date Jan 13, 2022
- QUALCOMM Incorporated
- Xia LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATING A GATE-ALL-AROUND (GAA) TRANSISTOR WITH A SILICON GERMA...
- Publication number 20210398972
- Publication date Dec 23, 2021
- QUALCOMM Incorporated
- Bin YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND (GAA) TRANSISTOR WITH INSULATOR ON SUBSTRATE AND ME...
- Publication number 20210384227
- Publication date Dec 9, 2021
- QUALCOMM Incorporated
- Haining YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE DIFFUSION BREAK GATES FULLY OVERLAPPING FIN EDGES WITH INSUL...
- Publication number 20210359108
- Publication date Nov 18, 2021
- QUALCOMM Incorporated
- Haining YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V COMPOUND SEMICONDUCTOR DIES WITH STRESS-TREATED INACTIVE SURF...
- Publication number 20210351095
- Publication date Nov 11, 2021
- QUALCOMM Incorporated
- Gengming TAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED DEVICE COMPRISING TRANSISTOR COUPLED TO A DUMMY GATE CON...
- Publication number 20210305250
- Publication date Sep 30, 2021
- QUALCOMM Incorporated
- Haining YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THERMAL PATHS FOR GLASS SUBSTRATES
- Publication number 20210304944
- Publication date Sep 30, 2021
- QUALCOMM Incorporated
- Kai LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED SILICON TRANSISTOR
- Publication number 20210280722
- Publication date Sep 9, 2021
- QUALCOMM Incorporated
- Haining YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DISTRIBUTED FEEDBACK (DFB) LASER ON SILICON AND INTEGRATED DEVICE C...
- Publication number 20210273409
- Publication date Sep 2, 2021
- QUALCOMM Incorporated
- Gengming TAO
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

P-type field effect transistor (PFET) on a silicon germanium (Ge) b...

FinFET semiconductor device

One transistor one magnetic tunnel junction multiple bit magnetores...

Three-dimensional (3D) interconnect structures employing via layer...

Three dimensional (3D) vertical spiral inductor and transformer

Mitigation of duty-cycle distortion

Static random-access memory (SRAM) compute in-memory integration

Fin field-effect transistor (FinFET) static random access memory (S...

Three dimensional (3D) double gate semiconductor

III-V compound semiconductor dies with stress-treated inactive surf...

Nanosheet (NS) and fin field-effect transistor (FinFET) hybrid inte...

Dynamic aging monitor and correction for critical path duty cycle a...

Heterojunction bipolar transistor with field plates

Distributed feedback (DFB) laser on silicon and integrated device c...

Integrated device comprising transistor coupled to a dummy gate con...

Semiconductor device implemented with buried rails

Gate all around transistors with high charge mobility channel mater...

Vertically stacked multilayer high-density RRAM

Thermal paths for glass substrates

Ferroelectric transistor

High power performance gallium nitride high electron mobility trans...

Enhanced active and passive devices for radio frequency (RF) proces...

Techniques for thermal matching of integrated circuits

Integration of vertical GaN varactor with HEMT

Integration of vertical GaN varactor with HEMT

Low resistance source/drain regions in III-V transistors

High power compound semiconductor field effect transistor devices w...

Integrated circuit with metal gate having dielectric portion over i...

Heterojunction bipolar transistors with field plates

Thin-film variable metal-oxide-semiconductor (MOS) capacitor for pa...

Patents Applicationslast 30 patents

INTEGRATED CIRCUIT (IC) PACKAGE WITH EMBEDDED POWER MANAGEMENT INTE...

INTEGRATED CIRCUITS WITH TWO-SIDE METALLIZATION AND EXTERNAL STIFFE...

FIELD-EFFECT TRANSISTORS (FETS) EMPLOYING THERMAL EXPANSION OF WORK...

SUBSTRATE WITH MULTIPLE CORE LAYERS TO PROVIDE VARIED THICKNESS CAV...

BACK-END-OF-LINE (BEOL) INTERCONNECTS WITH DIFFERENT AIRGAP HEIGHTS...

OPTIMIZATION OF VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR INTEGRATION

OPTIMIZATION OF VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR INTEGRATION

2D-MATERIAL GATE-ALL-AROUND COMPLEMENTARY FET INTEGRATION

MONOLITHIC THREE-DIMENSIONAL (3D) COMPLEMENTARY FIELD EFFECT TRANSI...

STACKED COMPLEMENTARY FIELD EFFECT TRANSISTOR (CFET) AND METHOD OF...

THREE-DIMENSIONAL (3D) INTERCONNECT STRUCTURES EMPLOYING VIA LAYER...

MITIGATION OF DUTY-CYCLE DISTORTION

THREE DIMENSIONAL (3D) DOUBLE GATE SEMICONDUCTOR

ONE TRANSISTOR ONE MAGNETIC TUNNEL JUNCTION MULTIPLE BIT MAGNETORES...

THREE DIMENSIONAL (3D) VERTICAL SPIRAL INDUCTOR AND TRANSFORMER

POWER DECOUPLING METAL-INSULATOR-METAL CAPACITOR

P-TYPE FIELD EFFECT TRANSISTOR (PFET) ON A SILICON GERMANIUM (GE) B...

SELF-ALIGNED LOW RESISTANCE BURIED POWER RAIL THROUGH SINGLE DIFFUS...

MULTI-CHANNEL GATE-ALL-AROUND HIGH-ELECTRON-MOBILITY TRANSISTOR

HIGH DENSITY METAL-INSULATOR-METAL CAPACITOR

DOUBLE-SIDE BACK-END-OF-LINE METALLIZATION FOR PSEUDO THROUGH-SILIC...

SEMICONDUCTOR DEVICE IMPLEMENTED WITH BURIED RAILS

INTEGRATING A GATE-ALL-AROUND (GAA) TRANSISTOR WITH A SILICON GERMA...

GATE-ALL-AROUND (GAA) TRANSISTOR WITH INSULATOR ON SUBSTRATE AND ME...

DOUBLE DIFFUSION BREAK GATES FULLY OVERLAPPING FIN EDGES WITH INSUL...

III-V COMPOUND SEMICONDUCTOR DIES WITH STRESS-TREATED INACTIVE SURF...

INTEGRATED DEVICE COMPRISING TRANSISTOR COUPLED TO A DUMMY GATE CON...

THERMAL PATHS FOR GLASS SUBSTRATES

STRAINED SILICON TRANSISTOR

DISTRIBUTED FEEDBACK (DFB) LASER ON SILICON AND INTEGRATED DEVICE C...