Bing W. Shen

Person

Richardson, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
High performance composed pillar dRAM cell
- Patent number 5,334,548
- Issue date Aug 2, 1994
- Texas Instruments Incorporated
- Bing W. Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance composed pillar DRAM cell
- Patent number 5,300,450
- Issue date Apr 5, 1994
- Texas Instruments Incorporated
- Bing W. Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making high performance composed pillar dRAM cell
- Patent number 5,106,776
- Issue date Apr 21, 1992
- Texas Instruments Incorporated
- Bing W. Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance composed pillar dRAM cell
- Patent number 5,103,276
- Issue date Apr 7, 1992
- Texas Instruments Incorporated
- Bing W. Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a trench DRAM
- Patent number 5,017,506
- Issue date May 21, 1991
- Texas Instruments Incorporated
- Bing-Whey Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making trench DRAM cell with stacked capacitor and buried...
- Patent number 4,978,634
- Issue date Dec 18, 1990
- Texas Instruments, Incorporated
- Bing-Whey Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench memory cell
- Patent number 4,958,212
- Issue date Sep 18, 1990
- Texas Instruments Incorporated
- Clarence W. Teng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked insulating film including yttrium oxide
- Patent number 4,888,820
- Issue date Dec 19, 1989
- Texas Instruments Incorporated
- Ih-Chin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride/oxide/nitride capacitor dielectric
- Patent number 4,882,649
- Issue date Nov 21, 1989
- Texas Instruments Incorporated
- Ih-Chin Chen
- H01 - BASIC ELECTRIC ELEMENTS

Bing W. Shen

Person

Patents Grantslast 30 patents

High performance composed pillar dRAM cell

High performance composed pillar DRAM cell

Method of making high performance composed pillar dRAM cell

High performance composed pillar dRAM cell

Method for fabricating a trench DRAM

Method of making trench DRAM cell with stacked capacitor and buried...

Trench memory cell

Stacked insulating film including yttrium oxide

Nitride/oxide/nitride capacitor dielectric