Bingxi Wood

Person

Cupertino, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Horizontal gate-all-around device nanowire air gap spacer formation
- Patent number 11,848,369
- Issue date Dec 19, 2023
- Applied Materials, Inc.
- Shiyu Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Horizontal gate all around device nanowire air gap spacer formation
- Patent number 11,282,936
- Issue date Mar 22, 2022
- Applied Materials, Inc.
- Shiyu Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Horizontal gate all around and FinFET device isolation
- Patent number 11,145,761
- Issue date Oct 12, 2021
- Applied Materials, Inc.
- Shiyu Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Horizontal gate all around device nanowire air gap spacer formation
- Patent number 10,777,650
- Issue date Sep 15, 2020
- Applied Materials, Inc.
- Shiyu Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Horizontal gate all around and FinFET device isolation
- Patent number 10,490,666
- Issue date Nov 26, 2019
- Applied Materials, Inc.
- Shiyu Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating air-gap spacer for N7/N5 finFET and beyond
- Patent number 9,960,275
- Issue date May 1, 2018
- Applied Materials, Inc.
- Chih-Yang Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Horizontal gate all around and FinFET device isolation
- Patent number 9,865,735
- Issue date Jan 9, 2018
- Applied Materials, Inc.
- Shiyu Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and apparatus for forming horizontal gate all around device...
- Patent number 9,673,277
- Issue date Jun 6, 2017
- Applied Materials, Inc.
- Adam Brand
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating nanowires for horizontal gate all around dev...
- Patent number 9,484,406
- Issue date Nov 1, 2016
- Applied Materials, Inc.
- Shiyu Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for chemical mechanical planarization of patterned wafers
- Patent number 9,177,815
- Issue date Nov 3, 2015
- Applied Materials, Inc.
- Yi-Chiau Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin formation by epitaxial deposition
- Patent number 8,999,821
- Issue date Apr 7, 2015
- Applied Materials, Inc.
- Adam Brand
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual gate process
- Patent number 8,999,829
- Issue date Apr 7, 2015
- Applied Materials, Inc.
- Adam Brand
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a self-aligned buried bit line for a vertical...
- Patent number 8,895,432
- Issue date Nov 25, 2014
- Applied Materials, Inc.
- Chorng-Ping Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective epitaxial germanium growth on silicon-trench fill and in...
- Patent number 8,652,951
- Issue date Feb 18, 2014
- Applied Materials, Inc.
- Yi-Chiau Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate electrodes for replacement gate integration scheme
- Patent number 7,892,911
- Issue date Feb 22, 2011
- Applied Materials, Inc.
- Bingxi Sun Wood
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cleaning of native oxide with hydrogen-containing radicals
- Patent number 7,604,708
- Issue date Oct 20, 2009
- Applied Materials, Inc.
- Bingxi Sun Wood
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
HORIZONTAL GATE-ALL-AROUND DEVICE NANOWIRE AIR GAP SPACER FORMATION
- Publication number 20220173220
- Publication date Jun 2, 2022
- Applied Materials, Inc.
- Shiyu SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HORIZONTAL GATE ALL AROUND DEVICE NANOWIRE AIR GAP SPACER FORMATION
- Publication number 20200411656
- Publication date Dec 31, 2020
- Applied Materials, Inc.
- Shiyu SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HORIZONTAL GATE ALL AROUND AND FINFET DEVICE ISOLATION
- Publication number 20200035822
- Publication date Jan 30, 2020
- Applied Materials, Inc.
- Shiyu SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING AIR-GAP SPACER FOR N7/N5 FINFET AND BEYOND
- Publication number 20180122945
- Publication date May 3, 2018
- Applied Materials, Inc.
- Chih-Yang CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HORIZONTAL GATE ALL AROUND AND FINFET DEVICE ISOLATION
- Publication number 20180061978
- Publication date Mar 1, 2018
- Applied Materials, Inc.
- Shiyu SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HORIZONTAL GATE ALL AROUND DEVICE NANOWIRE AIR GAP SPACER FORMATION
- Publication number 20170309719
- Publication date Oct 26, 2017
- Applied Materials, Inc.
- Shiyu SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING NANOWIRES FOR HORIZONTAL GATE ALL AROUND DEV...
- Publication number 20170194430
- Publication date Jul 6, 2017
- Applied Materials, Inc.
- Bingxi Sun WOOD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HORIZONTAL GATE ALL AROUND AND FINFET DEVICE ISOLATION
- Publication number 20160336405
- Publication date Nov 17, 2016
- Applied Materials, Inc.
- Shiyu SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND APPARATUS FOR FORMING HORIZONTAL GATE ALL AROUND DEVICE...
- Publication number 20160111495
- Publication date Apr 21, 2016
- Applied Materials, Inc.
- ADAM BRAND
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR PATTERNING A HARDMASK LAYER FOR AN ION IMPLANTATION PRO...
- Publication number 20150118832
- Publication date Apr 30, 2015
- Applied Materials, Inc.
- Bingxi Sun WOOD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FORMATION BY EPITAXIAL DEPOSITION
- Publication number 20150050800
- Publication date Feb 19, 2015
- Adam Brand
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTOR FABRICATED WITH HOLLOW REPLACEMENT CHANNEL
- Publication number 20140231914
- Publication date Aug 21, 2014
- Applied Materials, Inc.
- Chorng-Ping Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL GATE PROCESS
- Publication number 20140113442
- Publication date Apr 24, 2014
- Applied Materials, Inc.
- Adam Brand
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating a self-aligned buried bit line for a vertical...
- Publication number 20130320542
- Publication date Dec 5, 2013
- Chorng-Ping Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR CHEMICAL MECHANICAL PLANARIZATION OF PATTERNED WAFERS
- Publication number 20130295752
- Publication date Nov 7, 2013
- YI-CHIAU HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE EPITAXIAL GERMANIUM GROWTH ON SILICON-TRENCH FILL AND IN...
- Publication number 20130210221
- Publication date Aug 15, 2013
- YI-CHIAU HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INWARD DIELECTRIC SPACERS FOR REPLACEMENT GATE INTEGRATION SCHEME
- Publication number 20090189201
- Publication date Jul 30, 2009
- Chorng-Ping Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATE ELECTRODES FOR REPLACEMENT GATE INTEGRATION SCHEME
- Publication number 20090179285
- Publication date Jul 16, 2009
- Bingxi Sun Wood
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cleaning of native oxide with hydrogen-containing radicals
- Publication number 20040219789
- Publication date Nov 4, 2004
- APPLIED MATERIALS, INC.
- Bingxi Sun Wood
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Bingxi Wood

Person

Patents Grantslast 30 patents

Horizontal gate-all-around device nanowire air gap spacer formation

Horizontal gate all around device nanowire air gap spacer formation

Horizontal gate all around and FinFET device isolation

Horizontal gate all around device nanowire air gap spacer formation

Horizontal gate all around and FinFET device isolation

Method of fabricating air-gap spacer for N7/N5 finFET and beyond

Horizontal gate all around and FinFET device isolation

Methods and apparatus for forming horizontal gate all around device...

Method for fabricating nanowires for horizontal gate all around dev...

Methods for chemical mechanical planarization of patterned wafers

Fin formation by epitaxial deposition

Dual gate process

Method of fabricating a self-aligned buried bit line for a vertical...

Selective epitaxial germanium growth on silicon-trench fill and in...

Metal gate electrodes for replacement gate integration scheme

Cleaning of native oxide with hydrogen-containing radicals

Patents Applicationslast 30 patents

HORIZONTAL GATE-ALL-AROUND DEVICE NANOWIRE AIR GAP SPACER FORMATION

HORIZONTAL GATE ALL AROUND DEVICE NANOWIRE AIR GAP SPACER FORMATION

HORIZONTAL GATE ALL AROUND AND FINFET DEVICE ISOLATION

METHOD OF FABRICATING AIR-GAP SPACER FOR N7/N5 FINFET AND BEYOND

HORIZONTAL GATE ALL AROUND AND FINFET DEVICE ISOLATION

HORIZONTAL GATE ALL AROUND DEVICE NANOWIRE AIR GAP SPACER FORMATION

METHOD FOR FABRICATING NANOWIRES FOR HORIZONTAL GATE ALL AROUND DEV...

HORIZONTAL GATE ALL AROUND AND FINFET DEVICE ISOLATION

METHODS AND APPARATUS FOR FORMING HORIZONTAL GATE ALL AROUND DEVICE...

METHODS FOR PATTERNING A HARDMASK LAYER FOR AN ION IMPLANTATION PRO...

FIN FORMATION BY EPITAXIAL DEPOSITION

FIN FIELD EFFECT TRANSISTOR FABRICATED WITH HOLLOW REPLACEMENT CHANNEL

DUAL GATE PROCESS

Method of fabricating a self-aligned buried bit line for a vertical...

METHODS FOR CHEMICAL MECHANICAL PLANARIZATION OF PATTERNED WAFERS

SELECTIVE EPITAXIAL GERMANIUM GROWTH ON SILICON-TRENCH FILL AND IN...

INWARD DIELECTRIC SPACERS FOR REPLACEMENT GATE INTEGRATION SCHEME

METAL GATE ELECTRODES FOR REPLACEMENT GATE INTEGRATION SCHEME

Cleaning of native oxide with hydrogen-containing radicals