Biswajeet GUHA

Person

Hillsboro, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
High aspect ratio source or drain structures with abrupt dopant pro...
- Patent number 12,288,808
- Issue date Apr 29, 2025
- Intel Corporation
- Ryan Keech
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having devices with s...
- Patent number 12,288,789
- Issue date Apr 29, 2025
- Intel Corporation
- Biswajeet Guha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having adjacent struc...
- Patent number 12,272,737
- Issue date Apr 8, 2025
- Intel Corporation
- Biswajeet Guha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structures having partitioned source or drain co...
- Patent number 12,230,717
- Issue date Feb 18, 2025
- Intel Corporation
- Mauro J. Kobrinsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having asymmetric sou...
- Patent number 12,230,721
- Issue date Feb 18, 2025
- Intel Corporation
- Biswajeet Guha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned gate endcap (SAGE) architectures with gate-all-around...
- Patent number 12,224,350
- Issue date Feb 11, 2025
- Intel Corporation
- Biswajeet Guha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having oxide sub-fins
- Patent number 12,211,925
- Issue date Jan 28, 2025
- Intel Corporation
- Leonard P. Guler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having nanowires with...
- Patent number 12,206,027
- Issue date Jan 21, 2025
- Intel Corporation
- Glenn Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having removed substrate
- Patent number 12,199,143
- Issue date Jan 14, 2025
- Intel Corporation
- Biswajeet Guha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wrap-around contact structures for semiconductor nanowires and nano...
- Patent number 12,176,429
- Issue date Dec 24, 2024
- Intel Corporation
- Rishabh Mehandru
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate-less electrostatic discharge (ESD) integrated circuit str...
- Patent number 12,166,031
- Issue date Dec 10, 2024
- Intel Corporation
- Biswajeet Guha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having source or drai...
- Patent number 12,159,901
- Issue date Dec 3, 2024
- Intel Corporation
- Cory Bomberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of gate-all-around integrated circuit structures having...
- Patent number 12,068,314
- Issue date Aug 20, 2024
- Intel Corporation
- Leonard P. Guler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned gate endcap (SAGE) architectures with gate-all-around...
- Patent number 12,057,491
- Issue date Aug 6, 2024
- Intel Corporation
- Biswajeet Guha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated nanowire and nanoribbon patterning in transistor manufac...
- Patent number 12,014,959
- Issue date Jun 18, 2024
- Intel Corporation
- Leonard P Guler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having depopulated ch...
- Patent number 12,002,810
- Issue date Jun 4, 2024
- Intel Corporation
- Dax M. Crum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of gate-all-around integrated circuit structures having...
- Patent number 11,990,472
- Issue date May 21, 2024
- Intel Corporation
- Leonard P. Guler
- G11 - INFORMATION STORAGE
Information Patent Grant
Channel structures with sub-fin dopant diffusion blocking layers
- Patent number 11,984,449
- Issue date May 14, 2024
- Intel Corporation
- Cory Bomberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cavity spacer for nanowire transistors
- Patent number 11,929,396
- Issue date Mar 12, 2024
- Intel Corporation
- William Hsu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Gate-all-around integrated circuit structures having devices with s...
- Patent number 11,908,856
- Issue date Feb 20, 2024
- Intel Corporation
- Biswajeet Guha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric isolation layer between a nanowire transistor and a subs...
- Patent number 11,901,458
- Issue date Feb 13, 2024
- Intel Corporation
- Bruce E. Beattie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures fabricated using alte...
- Patent number 11,894,368
- Issue date Feb 6, 2024
- Intel Corporation
- Sudipto Naskar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures including varactors
- Patent number 11,869,987
- Issue date Jan 9, 2024
- Intel Corporation
- Ayan Kar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-planar integrated circuit structures having mitigated source or...
- Patent number 11,869,891
- Issue date Jan 9, 2024
- Intel Corporation
- Jun Sung Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire transistor structure and method of shaping
- Patent number 11,869,973
- Issue date Jan 9, 2024
- Intel Corporation
- Erica J. Thompson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Neighboring gate-all-around integrated circuit structures having di...
- Patent number 11,862,635
- Issue date Jan 2, 2024
- Intel Corporation
- Leonard P. Guler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned gate endcap (SAGE) architectures with gate-all-around...
- Patent number 11,855,223
- Issue date Dec 26, 2023
- Intel Corporation
- Biswajeet Guha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having adjacent deep...
- Patent number 11,837,641
- Issue date Dec 5, 2023
- Intel Corporation
- Biswajeet Guha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wrap-around contact structures for semiconductor nanowires and nano...
- Patent number 11,824,107
- Issue date Nov 21, 2023
- Intel Corporation
- Rishabh Mehandru
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having devices with c...
- Patent number 11,824,116
- Issue date Nov 21, 2023
- Intel Corporation
- Biswajeet Guha
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING CUT METAL GATES
- Publication number 20250133821
- Publication date Apr 24, 2025
- Intel Corporation
- Tahir GHANI
Information Patent Application
SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH GATE-ALL-AROUND...
- Publication number 20250126832
- Publication date Apr 17, 2025
- Intel Corporation
- Biswajeet GUHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING OXIDE SUB-FINS
- Publication number 20250120152
- Publication date Apr 10, 2025
- Intel Corporation
- Leonard P. GULER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING NANOWIRES WITH...
- Publication number 20250113550
- Publication date Apr 3, 2025
- Intel Corporation
- Glenn GLASS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING REMOVED SUBSTRATE
- Publication number 20250107181
- Publication date Mar 27, 2025
- Intel Corporation
- Biswajeet GUHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING SOURCE OR DRAI...
- Publication number 20250048698
- Publication date Feb 6, 2025
- Intel Corporation
- Cory BOMBERGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING...
- Publication number 20240363628
- Publication date Oct 31, 2024
- Intel Corporation
- Leonard P. GULER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH GATE-ALL-AROUND...
- Publication number 20240355903
- Publication date Oct 24, 2024
- Intel Corporation
- Biswajeet GUHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING CUT METAL GATES
- Publication number 20240347539
- Publication date Oct 17, 2024
- Intel Corporation
- Tahir GHANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cavity Spacer for Nanowire Transistors
- Publication number 20240347595
- Publication date Oct 17, 2024
- Intel Corporation
- William Hsu
- B82 - NANO-TECHNOLOGY
Information Patent Application
LONG CHANNEL FIN TRANSISTORS IN NANORIBBON-BASED DEVICES
- Publication number 20240321987
- Publication date Sep 26, 2024
- Intel Corporation
- Tao Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE WITH BACKSIDE FIN TRIM ISOLATION
- Publication number 20240304619
- Publication date Sep 12, 2024
- Guowei Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF NANORIBBON-BASED TRANSISTORS USING PATTERNED FOUNDATION
- Publication number 20240304621
- Publication date Sep 12, 2024
- Intel Corporation
- Chiao-Ti Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATE FABRICATION FOR NANORIBBON-BASED TRANSISTORS
- Publication number 20240290788
- Publication date Aug 29, 2024
- Intel Corporation
- Guowei Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING MEMORY DEVICES INCLUDING B-SITE DOPANTS AND L...
- Publication number 20240276734
- Publication date Aug 15, 2024
- Kepler Computing Inc.
- Biswajeet Guha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING STACKED CAPACITORS THROUGH WAFER BONDING
- Publication number 20240274651
- Publication date Aug 15, 2024
- Kepler Computing Inc.
- Biswajeet Guha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING CAPACITORS THROUGH WAFER BONDING
- Publication number 20240276735
- Publication date Aug 15, 2024
- Kepler Computing Inc.
- Biswajeet Guha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DEPOPULATED CH...
- Publication number 20240266353
- Publication date Aug 8, 2024
- Intel Corporation
- Dax M. CRUM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH GATE-ALL-AROUND...
- Publication number 20240243203
- Publication date Jul 18, 2024
- Intel Corporation
- Biswajeet GUHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING...
- Publication number 20240178226
- Publication date May 30, 2024
- Intel Corporation
- Leonard P. GULER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DEVICES WITH S...
- Publication number 20240145471
- Publication date May 2, 2024
- Intel Corporation
- Biswajeet GUHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC ISOLATION LAYER BETWEEN A NANOWIRE TRANSISTOR AND A SUBS...
- Publication number 20240145598
- Publication date May 2, 2024
- Intel Corporation
- Bruce E. Beattie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES FABRICATED USING ALTE...
- Publication number 20240120335
- Publication date Apr 11, 2024
- Intel Corporation
- Sudipto NASKAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-PLANAR INTEGRATED CIRCUIT STRUCTURES HAVING MITIGATED SOURCE OR...
- Publication number 20240096896
- Publication date Mar 21, 2024
- Intel Corporation
- Jun Sung KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE CHANNEL DIODE STRUCTURE INCLUDING SUB-FIN
- Publication number 20240088132
- Publication date Mar 14, 2024
- Intel Corporation
- Nicholas A. Thomson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NEIGHBORING GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DI...
- Publication number 20240088142
- Publication date Mar 14, 2024
- Intel Corporation
- Leonard P. GULER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE TRANSISTOR STRUCTURE AND METHOD OF SHAPING
- Publication number 20240088296
- Publication date Mar 14, 2024
- Intel Corporation
- Erica J. Thompson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE AND DRAIN REGIONS FOR LATERALLY ADJACENT GATE-ALL-AROUND (GA...
- Publication number 20240071831
- Publication date Feb 29, 2024
- Intel Corporation
- Chang Wan Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING ADJACENT DEEP...
- Publication number 20240055497
- Publication date Feb 15, 2024
- Intel Corporation
- Biswajeet GUHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WRAP-AROUND CONTACT STRUCTURES FOR SEMICONDUCTOR NANOWIRES AND NANO...
- Publication number 20240047566
- Publication date Feb 8, 2024
- Intel Corporation
- Rishabh MEHANDRU
- H01 - BASIC ELECTRIC ELEMENTS

Biswajeet GUHA

Person

Patents Grantslast 30 patents

High aspect ratio source or drain structures with abrupt dopant pro...

Gate-all-around integrated circuit structures having devices with s...

Gate-all-around integrated circuit structures having adjacent struc...

Integrated circuit structures having partitioned source or drain co...

Gate-all-around integrated circuit structures having asymmetric sou...

Self-aligned gate endcap (SAGE) architectures with gate-all-around...

Gate-all-around integrated circuit structures having oxide sub-fins

Gate-all-around integrated circuit structures having nanowires with...

Gate-all-around integrated circuit structures having removed substrate

Wrap-around contact structures for semiconductor nanowires and nano...

Substrate-less electrostatic discharge (ESD) integrated circuit str...

Gate-all-around integrated circuit structures having source or drai...

Fabrication of gate-all-around integrated circuit structures having...

Self-aligned gate endcap (SAGE) architectures with gate-all-around...

Integrated nanowire and nanoribbon patterning in transistor manufac...

Gate-all-around integrated circuit structures having depopulated ch...

Fabrication of gate-all-around integrated circuit structures having...

Channel structures with sub-fin dopant diffusion blocking layers

Cavity spacer for nanowire transistors

Gate-all-around integrated circuit structures having devices with s...

Dielectric isolation layer between a nanowire transistor and a subs...

Gate-all-around integrated circuit structures fabricated using alte...

Gate-all-around integrated circuit structures including varactors

Non-planar integrated circuit structures having mitigated source or...

Nanowire transistor structure and method of shaping

Neighboring gate-all-around integrated circuit structures having di...

Self-aligned gate endcap (SAGE) architectures with gate-all-around...

Gate-all-around integrated circuit structures having adjacent deep...

Wrap-around contact structures for semiconductor nanowires and nano...

Gate-all-around integrated circuit structures having devices with c...

Patents Applicationslast 30 patents

INTEGRATED CIRCUIT STRUCTURES HAVING CUT METAL GATES

SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH GATE-ALL-AROUND...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING OXIDE SUB-FINS

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING NANOWIRES WITH...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING REMOVED SUBSTRATE

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING SOURCE OR DRAI...

FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING...

SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH GATE-ALL-AROUND...

INTEGRATED CIRCUIT STRUCTURES HAVING CUT METAL GATES

Cavity Spacer for Nanowire Transistors

LONG CHANNEL FIN TRANSISTORS IN NANORIBBON-BASED DEVICES

INTEGRATED CIRCUIT DEVICE WITH BACKSIDE FIN TRIM ISOLATION

FABRICATION OF NANORIBBON-BASED TRANSISTORS USING PATTERNED FOUNDATION

METAL GATE FABRICATION FOR NANORIBBON-BASED TRANSISTORS

METHOD OF FABRICATING MEMORY DEVICES INCLUDING B-SITE DOPANTS AND L...

METHOD OF FORMING STACKED CAPACITORS THROUGH WAFER BONDING

METHOD OF FORMING CAPACITORS THROUGH WAFER BONDING

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DEPOPULATED CH...

SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH GATE-ALL-AROUND...

FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DEVICES WITH S...

DIELECTRIC ISOLATION LAYER BETWEEN A NANOWIRE TRANSISTOR AND A SUBS...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES FABRICATED USING ALTE...

NON-PLANAR INTEGRATED CIRCUIT STRUCTURES HAVING MITIGATED SOURCE OR...

WIDE CHANNEL DIODE STRUCTURE INCLUDING SUB-FIN

NEIGHBORING GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DI...

NANOWIRE TRANSISTOR STRUCTURE AND METHOD OF SHAPING

SOURCE AND DRAIN REGIONS FOR LATERALLY ADJACENT GATE-ALL-AROUND (GA...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING ADJACENT DEEP...

WRAP-AROUND CONTACT STRUCTURES FOR SEMICONDUCTOR NANOWIRES AND NANO...