Bo-Feng YOUNG

Person

Taipei City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Memory array contact structures
- Patent number 12,225,731
- Issue date Feb 11, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Yu Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device
- Patent number 12,211,753
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate air spacer for fin-like field effect transistor
- Patent number 12,211,922
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien-Ning Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-level magnetic tunnel junction nor device with wrap-around ga...
- Patent number 12,193,242
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Han-Jong Chia
Information Patent Grant
Ferroelectric memory device and method of forming the same
- Patent number 12,193,241
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Chieh Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and method of forming thereof
- Patent number 12,167,606
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,154,986
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor chip
- Patent number 12,150,308
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded ferroelectric FinFET memory device
- Patent number 12,150,311
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bo-Feng Young
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated circuit including three-dimensional memory device
- Patent number 12,137,571
- Issue date Nov 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Negative-capacitance and ferroelectric field-effect transistor (NCF...
- Patent number 12,136,659
- Issue date Nov 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Te-Yang Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and method of forming the same
- Patent number 12,137,569
- Issue date Nov 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chao-I Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet field-effect transistor device and method of forming
- Patent number 12,125,922
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method of fabricating the same
- Patent number 12,114,506
- Issue date Oct 8, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bo-Feng Young
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device with ferroelectric material
- Patent number 12,101,939
- Issue date Sep 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Chieh Lu
Information Patent Grant
Memory device and method of forming the same
- Patent number 12,089,414
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bo-Feng Young
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory array and methods of forming same
- Patent number 12,069,864
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Ming Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor devices and methods of manufacture
- Patent number 12,069,865
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gated ferroelectric memory cells for memory cell array and methods...
- Patent number 12,069,868
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density 3D FERAM
- Patent number 12,058,870
- Issue date Aug 6, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with a logic device and a memory device bei...
- Patent number 12,058,869
- Issue date Aug 6, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory array gate structures
- Patent number 12,051,750
- Issue date Jul 30, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Chieh Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric memory device and method of forming the same
- Patent number 12,041,783
- Issue date Jul 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Chieh Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric random access memory device with a three-dimensional...
- Patent number 12,041,786
- Issue date Jul 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory array including dummy regions
- Patent number 12,040,006
- Issue date Jul 16, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bo-Feng Young
- G11 - INFORMATION STORAGE
Information Patent Grant
Negative-capacitance field effect transistor
- Patent number 12,040,387
- Issue date Jul 16, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with nanostructure
- Patent number 12,034,045
- Issue date Jul 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gap in inner spacers and methods of fabricating the same in fie...
- Patent number 11,990,529
- Issue date May 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien Ning Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional stackable ferroelectric random access memory devi...
- Patent number 11,991,886
- Issue date May 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Han Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory array including epitaxial source lines and bit lines
- Patent number 11,974,441
- Issue date Apr 30, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR CHIP
- Publication number 20240389351
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL DRAM STRUCTURE AND METHOD
- Publication number 20240389304
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Ta Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240389335
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chao-I Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240389344
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED FERROELECTRIC FINFET MEMORY DEVICE
- Publication number 20240389345
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20240387728
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20240389332
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR CHIP
- Publication number 20240389336
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bo-Feng Young
Information Patent Application
SEMICONDUCTOR CHIP AND FABRICATION METHOD THEREOF
- Publication number 20240389346
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240381654
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Chieh Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING
- Publication number 20240372010
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Three-Dimensional Memory Device with Ferroelectric Material
- Publication number 20240365553
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Chieh Lu
Information Patent Application
MEMORY DEVICE
- Publication number 20240365554
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bo-Feng Young
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE HAVING MEMORY CELL AND STAIRCASE STRUCTURE AND...
- Publication number 20240365557
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE
- Publication number 20240365559
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH NANOSTRUCTURE
- Publication number 20240355881
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sai-Hooi YEONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gated Ferroelectric Memory Cells for Memory Cell Array and Method f...
- Publication number 20240357834
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Bo-Feng YOUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH A LOGIC DEVICE AND A MEMORY DEVICE BEI...
- Publication number 20240357829
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- BO-FENG YOUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Array Including Dummy Regions
- Publication number 20240331754
- Publication date Oct 3, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Feng Young
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240324235
- Publication date Sep 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Chieh Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIR GAP IN INNER SPACERS AND METHODS OF FABRICATING THE SAME IN FIE...
- Publication number 20240313082
- Publication date Sep 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chien Ning Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL STACKABLE FERROELECTRIC RANDOM ACCESS MEMORY DEVI...
- Publication number 20240268122
- Publication date Aug 8, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Meng-Han Lin
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240206185
- Publication date Jun 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Chieh Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC MEMORY DEVICE USING BACK-END-OF-LINE (BEOL) THIN FILM...
- Publication number 20240196625
- Publication date Jun 13, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Bo-Feng YOUNG
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC STRUCTURE FOR SEMICONDUCTOR DEVICES
- Publication number 20240186414
- Publication date Jun 6, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Ming LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING THREE-DIMENSIONAL MEMORY
- Publication number 20240172433
- Publication date May 23, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bo-Feng YOUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240170343
- Publication date May 23, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sai-Hooi YEONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE AND METHODS
- Publication number 20240161797
- Publication date May 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bo-Feng YOUNG
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY CELL AND METHOD OF OPERATING THE SAME
- Publication number 20240096388
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bo-Feng YOUNG
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED CIRCUIT INCLUDING THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20240090231
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS

Bo-Feng YOUNG

Person

Patents Grantslast 30 patents

Memory array contact structures

Semiconductor device

Gate air spacer for fin-like field effect transistor

Multi-level magnetic tunnel junction nor device with wrap-around ga...

Ferroelectric memory device and method of forming the same

Memory device and method of forming thereof

Semiconductor device and method

Semiconductor chip

Embedded ferroelectric FinFET memory device

Integrated circuit including three-dimensional memory device

Negative-capacitance and ferroelectric field-effect transistor (NCF...

Memory device and method of forming the same

Nanosheet field-effect transistor device and method of forming

Semiconductor structure and method of fabricating the same

Three-dimensional memory device with ferroelectric material

Memory device and method of forming the same

Memory array and methods of forming same

Semiconductor devices and methods of manufacture

Gated ferroelectric memory cells for memory cell array and methods...

High density 3D FERAM

Semiconductor structure with a logic device and a memory device bei...

Memory array gate structures

Ferroelectric memory device and method of forming the same

Ferroelectric random access memory device with a three-dimensional...

Memory array including dummy regions

Negative-capacitance field effect transistor

Semiconductor device structure with nanostructure

Air gap in inner spacers and methods of fabricating the same in fie...

Three-dimensional stackable ferroelectric random access memory devi...

Memory array including epitaxial source lines and bit lines

Patents Applicationslast 30 patents

SEMICONDUCTOR CHIP

VERTICAL DRAM STRUCTURE AND METHOD

MEMORY DEVICE AND METHOD OF FORMING THE SAME

MEMORY DEVICE AND METHOD OF FORMING THE SAME

EMBEDDED FERROELECTRIC FINFET MEMORY DEVICE

SEMICONDUCTOR DEVICE AND METHOD

SEMICONDUCTOR STRUCTURE

SEMICONDUCTOR CHIP

SEMICONDUCTOR CHIP AND FABRICATION METHOD THEREOF

FERROELECTRIC MEMORY DEVICE AND METHOD OF FORMING THE SAME

NANOSHEET FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING

Three-Dimensional Memory Device with Ferroelectric Material

MEMORY DEVICE

SEMICONDUCTOR DEVICE HAVING MEMORY CELL AND STAIRCASE STRUCTURE AND...

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE

SEMICONDUCTOR DEVICE STRUCTURE WITH NANOSTRUCTURE

Gated Ferroelectric Memory Cells for Memory Cell Array and Method f...

SEMICONDUCTOR STRUCTURE WITH A LOGIC DEVICE AND A MEMORY DEVICE BEI...

Memory Array Including Dummy Regions

FERROELECTRIC MEMORY DEVICE AND METHOD OF FORMING THE SAME

AIR GAP IN INNER SPACERS AND METHODS OF FABRICATING THE SAME IN FIE...

THREE-DIMENSIONAL STACKABLE FERROELECTRIC RANDOM ACCESS MEMORY DEVI...

FERROELECTRIC MEMORY DEVICE AND METHOD OF FORMING THE SAME

FERROELECTRIC MEMORY DEVICE USING BACK-END-OF-LINE (BEOL) THIN FILM...

FERROELECTRIC STRUCTURE FOR SEMICONDUCTOR DEVICES

METHOD FOR FABRICATING THREE-DIMENSIONAL MEMORY

SEMICONDUCTOR DEVICE

INTEGRATED CIRCUIT DEVICE AND METHODS

MEMORY CELL AND METHOD OF OPERATING THE SAME

INTEGRATED CIRCUIT INCLUDING THREE-DIMENSIONAL MEMORY DEVICE