Bo Tao

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Shanghai, CN

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Patents Grantslast 30 patents

Information Patent Grant
Method and device for a dram capacitor having low depletion ratio
- Patent number 8,742,542
- Issue date Jun 3, 2014
- Semiconductor Manufacturing International (Shanghai) Corporation
- Cheng Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and device for a DRAM capacitor having low depletion ratio
- Patent number 8,426,286
- Issue date Apr 23, 2013
- Semiconductor Manufacturing International (Shanghai) Corporation
- Cheng Yang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD AND DEVICE FOR A DRAM CAPACITOR HAVING LOW DEPLETION RATIO
- Publication number 20130207233
- Publication date Aug 15, 2013
- Semiconductor Manufacturing International (Shanghai) Corporation
- Cheng Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND DEVICE FOR A DRAM CAPACITOR HAVING LOW DEPLETION RATIO
- Publication number 20110254127
- Publication date Oct 20, 2011
- Semiconductor Manufacturing International (Shanghai) Corporation
- CHENG YANG
- H01 - BASIC ELECTRIC ELEMENTS