Bo-Wen HSIEH

Person

Miaoli County, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor structure with enlarged gate electrode structure and...
- Patent number 12,191,366
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bo-Wen Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure and method of fabricating the same
- Patent number 12,015,068
- Issue date Jun 18, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Bo-Wen Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Introducing fluorine to gate after work function metal deposition
- Patent number 11,996,453
- Issue date May 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bo-Wen Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 11,848,367
- Issue date Dec 19, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bo-Wen Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure and method of fabricating the same
- Patent number 11,296,201
- Issue date Apr 5, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Bo-Wen Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with enlarged gate electrode structure and...
- Patent number 11,038,035
- Issue date Jun 15, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bo-Wen Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,018,234
- Issue date May 25, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bo-Wen Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure and method of fabricating the same
- Patent number 10,686,049
- Issue date Jun 16, 2020
- Taiwan Semiconductor Manufacturing Company Limited
- Bo-Wen Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure and method of fabricating the same
- Patent number 10,312,338
- Issue date Jun 4, 2019
- Taiwan Semiconductor Manufacturing Company Limited
- Bo-Wen Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with enlarged gate electrode structure and...
- Patent number 10,141,416
- Issue date Nov 27, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Wen Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure and method of fabricating the same
- Patent number 10,008,574
- Issue date Jun 26, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bo-Wen Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with enlarged gate electrode structure and...
- Patent number 9,748,350
- Issue date Aug 29, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Wen Hsieh
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR STRUCTURE WITH ENLARGED GATE ELECTRODE STRUCTURE AND...
- Publication number 20240379790
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Wen HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTRODUCING FLUORINE TO GATE AFTER WORK FUNCTION METAL DEPOSITION
- Publication number 20240313068
- Publication date Sep 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bo-Wen Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240072144
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Wen HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Introducing Fluorine To Gate After Work Function Metal Deposition
- Publication number 20230068458
- Publication date Mar 2, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bo-Wen Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURE AND METHOD OF FABRICATING THE SAME
- Publication number 20220231143
- Publication date Jul 21, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Bo-Wen HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH ENLARGED GATE ELECTRODE STRUCTURE AND...
- Publication number 20210305387
- Publication date Sep 30, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Wen HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20210280681
- Publication date Sep 9, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Wen HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURE AND METHOD OF FABRICATING THE SAME
- Publication number 20200312972
- Publication date Oct 1, 2020
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
- Bo-Wen HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20200035799
- Publication date Jan 30, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Wen HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURE AND METHOD OF FABRICATING THE SAME
- Publication number 20190288085
- Publication date Sep 19, 2019
- Taiwan Semiconductor Manufacturing Company Limited
- Bo-Wen HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH ENLARGED GATE ELECTRODE STRUCTURE AND...
- Publication number 20190109198
- Publication date Apr 11, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Wen HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURE AND METHOD OF FABRICATING THE SAME
- Publication number 20180323270
- Publication date Nov 8, 2018
- Taiwan Semiconductor Manufacturing Company Limited
- Bo-Wen HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure With Enlarged Gate Electrode Structure And...
- Publication number 20170358653
- Publication date Dec 14, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Wen HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURE AND METHOD OF FABRICATING THE SAME
- Publication number 20170154972
- Publication date Jun 1, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Wen HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH ENLARGED GATE ELECTRODE STRUCTURE AND...
- Publication number 20170125534
- Publication date May 4, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Wen HSIEH
- H01 - BASIC ELECTRIC ELEMENTS

Bo-Wen HSIEH

Person

Patents Grantslast 30 patents

Semiconductor structure with enlarged gate electrode structure and...

Gate structure and method of fabricating the same

Introducing fluorine to gate after work function metal deposition

Method for manufacturing semiconductor device

Gate structure and method of fabricating the same

Semiconductor structure with enlarged gate electrode structure and...

Semiconductor device and manufacturing method thereof

Gate structure and method of fabricating the same

Gate structure and method of fabricating the same

Semiconductor structure with enlarged gate electrode structure and...

Gate structure and method of fabricating the same

Semiconductor structure with enlarged gate electrode structure and...

Patents Applicationslast 30 patents

SEMICONDUCTOR STRUCTURE WITH ENLARGED GATE ELECTRODE STRUCTURE AND...

INTRODUCING FLUORINE TO GATE AFTER WORK FUNCTION METAL DEPOSITION

SEMICONDUCTOR DEVICE

Introducing Fluorine To Gate After Work Function Metal Deposition

GATE STRUCTURE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR STRUCTURE WITH ENLARGED GATE ELECTRODE STRUCTURE AND...

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

GATE STRUCTURE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

GATE STRUCTURE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR STRUCTURE WITH ENLARGED GATE ELECTRODE STRUCTURE AND...

GATE STRUCTURE AND METHOD OF FABRICATING THE SAME

Semiconductor Structure With Enlarged Gate Electrode Structure And...

GATE STRUCTURE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR STRUCTURE WITH ENLARGED GATE ELECTRODE STRUCTURE AND...