Bone-Fong Wu

Person

Hsinchu City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device having cut gate dielectric
- Patent number 11,901,237
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chang-Yun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor device
- Patent number 11,437,278
- Issue date Sep 6, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chang-Yun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Creating devices with multiple threshold voltages by cut-metal-gate...
- Patent number 10,868,003
- Issue date Dec 15, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ming-Chang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a metal gate and formation method thereof
- Patent number 10,741,450
- Issue date Aug 11, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chang-Yun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Creating devices with multiple threshold voltage by cut-metal-gate...
- Patent number 10,461,078
- Issue date Oct 29, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ming-Chang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dopant implantation method using multi-step implants
- Patent number 8,008,158
- Issue date Aug 30, 2011
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tse-En Chang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE HAVING CUT GATE DIELECTRIC
- Publication number 20240213097
- Publication date Jun 27, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chang-Yun CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING CUT GATE DIELECTRIC
- Publication number 20220359302
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chang-Yun CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SEMICONDUCTOR DEVICE
- Publication number 20200365465
- Publication date Nov 19, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chang-Yun CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Creating Devices with Multiple Threshold Voltages by Cut-Metal-Gate...
- Publication number 20200058650
- Publication date Feb 20, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ming-Chang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Creating Devices with Multiple Threshold Voltage by Cut-Metal-Gate...
- Publication number 20190267372
- Publication date Aug 29, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ming-Chang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FORMATION METHOD THEREOF
- Publication number 20190164838
- Publication date May 30, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chang-Yun CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPANT IMPLANTATION METHOD AND INTEGRATED CIRCUITS FORMED THEREBY
- Publication number 20100009506
- Publication date Jan 14, 2010
- Taiwan Semiconductor Manufacturing Co., LTD
- Tse-En Chang
- H01 - BASIC ELECTRIC ELEMENTS

Bone-Fong Wu

Person

Patents Grantslast 30 patents

Semiconductor device having cut gate dielectric

Method for forming semiconductor device

Creating devices with multiple threshold voltages by cut-metal-gate...

Semiconductor device having a metal gate and formation method thereof

Creating devices with multiple threshold voltage by cut-metal-gate...

Dopant implantation method using multi-step implants

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE HAVING CUT GATE DIELECTRIC

SEMICONDUCTOR DEVICE HAVING CUT GATE DIELECTRIC

METHOD FOR FORMING SEMICONDUCTOR DEVICE

Creating Devices with Multiple Threshold Voltages by Cut-Metal-Gate...

Creating Devices with Multiple Threshold Voltage by Cut-Metal-Gate...

SEMICONDUCTOR DEVICE AND FORMATION METHOD THEREOF

DOPANT IMPLANTATION METHOD AND INTEGRATED CIRCUITS FORMED THEREBY