BONG WOONG MUN

Person

Singapore, SG

People

Patents Grantslast 30 patents

Information Patent Grant
Extended-drain metal-oxide-semiconductor devices with a gap between...
- Patent number 12,336,220
- Issue date Jun 17, 2025
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Bong Woong Mun
Information Patent Grant
Laterally-diffused metal-oxide-semiconductor devices with an air gap
- Patent number 12,191,351
- Issue date Jan 7, 2025
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Bong Woong Mun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device for high voltage applications
- Patent number 11,996,441
- Issue date May 28, 2024
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Bong Woong Mun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistors with a gate structure in a dual-depth tren...
- Patent number 11,955,514
- Issue date Apr 9, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Bong Woong Mun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including a drain captive structure having an...
- Patent number 11,862,693
- Issue date Jan 2, 2024
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Bong Woong Mun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Galvanic isolation using isolation break between redistribution lay...
- Patent number 11,791,379
- Issue date Oct 17, 2023
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Bong Woong Mun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extended-drain metal-oxide-semiconductor devices with a notched gat...
- Patent number 11,791,392
- Issue date Oct 17, 2023
- GlobalFoundries Singapore Pte. Ltd.
- Bong Woong Mun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures for galvanic isolation
- Patent number 11,764,273
- Issue date Sep 19, 2023
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Bong Woong Mun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor transistors on multi-layered substrates
- Patent number 11,658,240
- Issue date May 23, 2023
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Bong Woong Mun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistors of semiconductor devices
- Patent number 11,538,910
- Issue date Dec 27, 2022
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Bong Woong Mun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extended-drain metal-oxide-semiconductor devices with a multiple-th...
- Patent number 11,502,193
- Issue date Nov 15, 2022
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Bong Woong Mun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage decoupling capacitor and integration methods
- Patent number 11,469,169
- Issue date Oct 11, 2022
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Bong Woong Mun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile memory device with a metal-insulator-metal (MIM) capaci...
- Patent number 11,456,306
- Issue date Sep 27, 2022
- GLOBALFOUNDRIES Singapore Ptd. Ltd.
- Bong Woong Mun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor devices and methods of forming transistor devices
- Patent number 11,257,949
- Issue date Feb 22, 2022
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Bong Woong Mun
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METAL-OXIDE SEMICONDUCTOR TRANSISTORS
- Publication number 20250015181
- Publication date Jan 9, 2025
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- BONG WOONG MUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE FOR GALVANIC ISOLATION USING DIELECTRIC-FILLED TRENCH IN...
- Publication number 20240243058
- Publication date Jul 18, 2024
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Bong Woong MUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS HAVING BACKSIDE CONTACT STRUCTURES
- Publication number 20240153876
- Publication date May 9, 2024
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- BONG WOONG MUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES FOR GALVANIC ISOLATION
- Publication number 20230387223
- Publication date Nov 30, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Bong Woong MUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALVANIC ISOLATION USING ISOLATION BREAK BETWEEN REDISTRIBUTION LAY...
- Publication number 20230361173
- Publication date Nov 9, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Bong Woong Mun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE WITH GALVANIC ISOLATION AND INTEGRATION METHODS
- Publication number 20230335580
- Publication date Oct 19, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- BONG WOONG MUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CIRCUIT STRUCTURE AND RELATED MULTI-TIME PROGRAMMABLE (MTP) MEMORY...
- Publication number 20230301087
- Publication date Sep 21, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Bong Woong MUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXTENDED-DRAIN METAL-OXIDE-SEMICONDUCTOR DEVICES WITH A GAP BETWEEN...
- Publication number 20230268436
- Publication date Aug 24, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Bong Woong Mun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALVANIC ISOLATION USING ISOLATION BREAK BETWEEN REDISTRIBUTION LAY...
- Publication number 20230197776
- Publication date Jun 22, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Bong Woong Mun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE FOR HIGH VOLTAGE APPLICATIONS
- Publication number 20230187483
- Publication date Jun 15, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Bong Woong MUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXTENDED-DRAIN METAL-OXIDE-SEMICONDUCTOR DEVICES WITH A NOTCHED GAT...
- Publication number 20220393009
- Publication date Dec 8, 2022
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Bong Woong Mun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES FOR GALVANIC ISOLATION
- Publication number 20220384588
- Publication date Dec 1, 2022
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Bong Woong MUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTORS WITH A GATE STRUCTURE IN A DUAL-DEPTH TREN...
- Publication number 20220384571
- Publication date Dec 1, 2022
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Bong Woong MUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE MEMORY DEVICE WITH A METAL-INSULATOR-METAL (MIM) CAPACI...
- Publication number 20220165739
- Publication date May 26, 2022
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Bong Woong MUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE DECOUPLING CAPACITOR AND INTEGRATION METHODS
- Publication number 20220165658
- Publication date May 26, 2022
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Bong Woong MUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR TRANSISTORS ON MULTI-LAYERED SUBSTRATES
- Publication number 20220109069
- Publication date Apr 7, 2022
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- BONG WOONG MUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXTENDED-DRAIN METAL-OXIDE-SEMICONDUCTOR DEVICES WITH A MULTIPLE-TH...
- Publication number 20220085211
- Publication date Mar 17, 2022
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Bong Woong Mun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME
- Publication number 20220059665
- Publication date Feb 24, 2022
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Bong Woong MUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICES AND METHODS OF FORMING TRANSISTOR DEVICES
- Publication number 20210359132
- Publication date Nov 18, 2021
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Bong Woong MUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTORS OF SEMICONDUCTOR DEVICES
- Publication number 20210288153
- Publication date Sep 16, 2021
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- BONG WOONG MUN
- H01 - BASIC ELECTRIC ELEMENTS

BONG WOONG MUN

Person

Patents Grantslast 30 patents

Extended-drain metal-oxide-semiconductor devices with a gap between...

Laterally-diffused metal-oxide-semiconductor devices with an air gap

Semiconductor device for high voltage applications

Field-effect transistors with a gate structure in a dual-depth tren...

Semiconductor devices including a drain captive structure having an...

Galvanic isolation using isolation break between redistribution lay...

Extended-drain metal-oxide-semiconductor devices with a notched gat...

Semiconductor structures for galvanic isolation

Semiconductor transistors on multi-layered substrates

Field-effect transistors of semiconductor devices

Extended-drain metal-oxide-semiconductor devices with a multiple-th...

High voltage decoupling capacitor and integration methods

Nonvolatile memory device with a metal-insulator-metal (MIM) capaci...

Transistor devices and methods of forming transistor devices

Patents Applicationslast 30 patents

METAL-OXIDE SEMICONDUCTOR TRANSISTORS

STRUCTURE FOR GALVANIC ISOLATION USING DIELECTRIC-FILLED TRENCH IN...

TRANSISTORS HAVING BACKSIDE CONTACT STRUCTURES

SEMICONDUCTOR STRUCTURES FOR GALVANIC ISOLATION

GALVANIC ISOLATION USING ISOLATION BREAK BETWEEN REDISTRIBUTION LAY...

ELECTRONIC DEVICE WITH GALVANIC ISOLATION AND INTEGRATION METHODS

CIRCUIT STRUCTURE AND RELATED MULTI-TIME PROGRAMMABLE (MTP) MEMORY...

EXTENDED-DRAIN METAL-OXIDE-SEMICONDUCTOR DEVICES WITH A GAP BETWEEN...

GALVANIC ISOLATION USING ISOLATION BREAK BETWEEN REDISTRIBUTION LAY...

SEMICONDUCTOR DEVICE FOR HIGH VOLTAGE APPLICATIONS

EXTENDED-DRAIN METAL-OXIDE-SEMICONDUCTOR DEVICES WITH A NOTCHED GAT...

SEMICONDUCTOR STRUCTURES FOR GALVANIC ISOLATION

FIELD-EFFECT TRANSISTORS WITH A GATE STRUCTURE IN A DUAL-DEPTH TREN...

NONVOLATILE MEMORY DEVICE WITH A METAL-INSULATOR-METAL (MIM) CAPACI...

HIGH VOLTAGE DECOUPLING CAPACITOR AND INTEGRATION METHODS

SEMICONDUCTOR TRANSISTORS ON MULTI-LAYERED SUBSTRATES

EXTENDED-DRAIN METAL-OXIDE-SEMICONDUCTOR DEVICES WITH A MULTIPLE-TH...

SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME

TRANSISTOR DEVICES AND METHODS OF FORMING TRANSISTOR DEVICES

FIELD-EFFECT TRANSISTORS OF SEMICONDUCTOR DEVICES