Bongki LEE

Person

Austin, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Methods of fabricating integrated circuits
- Patent number 9,472,465
- Issue date Oct 18, 2016
- GLOBALFOUNDRIES, INC.
- Bongki Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration method for fabrication of metal gate based multiple thr...
- Patent number 9,455,201
- Issue date Sep 27, 2016
- GLOBALFOUNDRIES Inc.
- Manoj Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit having multiple threshold voltages
- Patent number 9,362,180
- Issue date Jun 7, 2016
- GLOBALFOUNDRIES Inc.
- Bongki Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits having finFETs with improved doped channel regi...
- Patent number 9,287,180
- Issue date Mar 15, 2016
- GLOBALFOUNDRIES, INC.
- Jinping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating integrated circuits including fluorine inco...
- Patent number 9,196,475
- Issue date Nov 24, 2015
- GLOBALFOUNDRIES, INC.
- Bongki Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with increased space and volume between sha...
- Patent number 9,165,767
- Issue date Oct 20, 2015
- GLOBALFOUNDRIES Inc.
- Bharat Krishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits having FinFETs with improved doped channel regi...
- Patent number 9,093,476
- Issue date Jul 28, 2015
- GLOBALFOUNDRIES, INC.
- Jinping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing gate expansion after source and drain implant in gate last...
- Patent number 9,059,218
- Issue date Jun 16, 2015
- GLOBALFOUNDRIES Inc.
- Bharat Krishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for adjusting threshold voltage in a replaceme...
- Patent number 8,912,085
- Issue date Dec 16, 2014
- GLOBALFOUNDRIES Inc.
- Bongki Lee
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR STRUCTURE WITH INCREASED SPACE AND VOLUME BETWEEN SHA...
- Publication number 20160005657
- Publication date Jan 7, 2016
- GLOBALFOUNDRIES INC.
- Bharat KRISHNAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FABRICATING INTEGRATED CIRCUITS
- Publication number 20150325681
- Publication date Nov 12, 2015
- Bongki Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING INTEGRATED CIRCUITS INCLUDING FLUORINE INCO...
- Publication number 20150303057
- Publication date Oct 22, 2015
- GLOBALFOUNDRIES, Inc.
- Bongki Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS HAVING FINFETS WITH IMPROVED DOPED CHANNEL REGI...
- Publication number 20150294915
- Publication date Oct 15, 2015
- GLOBALFOUNDRIES, Inc.
- Jinping LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT HAVING MULTIPLE THRESHOLD VOLTAGES
- Publication number 20150243563
- Publication date Aug 27, 2015
- GLOBALFOUNDRIES INC.
- Bongki LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION METHOD FOR FABRICATION OF METAL GATE BASED MULTIPLE THR...
- Publication number 20150243652
- Publication date Aug 27, 2015
- GLOBALFOUNDRIES INC.
- Manoj JOSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INCREASED SPACE BETWEEN EPITAXY ON ADJACENT FINS OF FINFET
- Publication number 20150123146
- Publication date May 7, 2015
- GLOBALFOUNDRIES INC.
- Bharat KRISHNAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING GATE EXPANSION AFTER SOURCE AND DRAIN IMPLANT IN GATE LAST...
- Publication number 20150076622
- Publication date Mar 19, 2015
- Bharat Krishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS HAVING FINFETS WITH IMPROVED DOPED CHANNEL REGI...
- Publication number 20150035062
- Publication date Feb 5, 2015
- GLOBALFOUNDRIES, Inc.
- Jinping LIU
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Methods of fabricating integrated circuits

Integration method for fabrication of metal gate based multiple thr...

Integrated circuit having multiple threshold voltages

Integrated circuits having finFETs with improved doped channel regi...

Methods for fabricating integrated circuits including fluorine inco...

Semiconductor structure with increased space and volume between sha...

Integrated circuits having FinFETs with improved doped channel regi...

Reducing gate expansion after source and drain implant in gate last...

Method and apparatus for adjusting threshold voltage in a replaceme...

Patents Applicationslast 30 patents

SEMICONDUCTOR STRUCTURE WITH INCREASED SPACE AND VOLUME BETWEEN SHA...

METHODS OF FABRICATING INTEGRATED CIRCUITS

METHODS FOR FABRICATING INTEGRATED CIRCUITS INCLUDING FLUORINE INCO...

INTEGRATED CIRCUITS HAVING FINFETS WITH IMPROVED DOPED CHANNEL REGI...

INTEGRATED CIRCUIT HAVING MULTIPLE THRESHOLD VOLTAGES

INTEGRATION METHOD FOR FABRICATION OF METAL GATE BASED MULTIPLE THR...

INCREASED SPACE BETWEEN EPITAXY ON ADJACENT FINS OF FINFET

REDUCING GATE EXPANSION AFTER SOURCE AND DRAIN IMPLANT IN GATE LAST...

INTEGRATED CIRCUITS HAVING FINFETS WITH IMPROVED DOPED CHANNEL REGI...