Boris Peres

Person

Jersey City, NJ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Layout design for a high power, GaN-based FET having interdigitated...
- Patent number 8,729,565
- Issue date May 20, 2014
- Power Integrations, Inc.
- Linlin Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Layout design for a high power, GaN-based FET having interdigitated...
- Patent number 8,530,903
- Issue date Sep 10, 2013
- Power Integrations, Inc.
- Linlin Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Layout design for a high power, GaN-based FET
- Patent number 8,319,256
- Issue date Nov 27, 2012
- Power Integrations, Inc.
- Linlin Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures for gallium nitride-based devices
- Patent number 7,115,896
- Issue date Oct 3, 2006
- Emcore Corporation
- Shiping Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN semiconductor based voltage conversion device
- Patent number 7,116,567
- Issue date Oct 3, 2006
- Velox Semiconductor Corporation
- Bryan S. Shelton
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Lateral conduction Schottky diode with plural mesas
- Patent number 7,084,475
- Issue date Aug 1, 2006
- Velox Semiconductor Corporation
- Bryan S. Shelton
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LAYOUT DESIGN FOR A HIGH POWER, GaN-BASED FET
- Publication number 20130328060
- Publication date Dec 12, 2013
- Power Integrations, Inc.
- LinLin Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAYOUT DESIGN FOR A HIGH POWER, GaN-BASED FET
- Publication number 20130043487
- Publication date Feb 21, 2013
- Power Integrations, Inc.
- LinLin Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAYOUT DESIGN FOR A HIGH POWER, GaN-BASED FET
- Publication number 20110316045
- Publication date Dec 29, 2011
- Velox Semiconductor Corporation
- Linlin LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Package for Semiconductor Devices
- Publication number 20100140627
- Publication date Jun 10, 2010
- Bryan S. Shelton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Package for gallium nitride semiconductor devices
- Publication number 20060151868
- Publication date Jul 13, 2006
- TingGang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium nitride-based devices and manufacturing process
- Publication number 20060154455
- Publication date Jul 13, 2006
- Emcore Corporation
- Shiping Guo
- C30 - CRYSTAL GROWTH
Information Patent Application
GAN SEMICONDUCTOR BASED VOLTAGE CONVERSION DEVICE
- Publication number 20060145674
- Publication date Jul 6, 2006
- Emcore Corporation
- Bryan S. Shelton
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Lateral conduction schottky diode with plural mesas
- Publication number 20050179104
- Publication date Aug 18, 2005
- Emcore Corporation
- Bryan S. Shelton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium nitride-based devices and manufacturing process
- Publication number 20040119063
- Publication date Jun 24, 2004
- Emcore Corporation
- Shiping Guo
- C30 - CRYSTAL GROWTH

Boris Peres

Person

Patents Grantslast 30 patents

Layout design for a high power, GaN-based FET having interdigitated...

Layout design for a high power, GaN-based FET having interdigitated...

Layout design for a high power, GaN-based FET

Semiconductor structures for gallium nitride-based devices

GaN semiconductor based voltage conversion device

Lateral conduction Schottky diode with plural mesas

Patents Applicationslast 30 patents

LAYOUT DESIGN FOR A HIGH POWER, GaN-BASED FET

LAYOUT DESIGN FOR A HIGH POWER, GaN-BASED FET

LAYOUT DESIGN FOR A HIGH POWER, GaN-BASED FET

Package for Semiconductor Devices

Package for gallium nitride semiconductor devices

Gallium nitride-based devices and manufacturing process

GAN SEMICONDUCTOR BASED VOLTAGE CONVERSION DEVICE

Lateral conduction schottky diode with plural mesas

Gallium nitride-based devices and manufacturing process