Borna J. Obradovic

Person

Leander, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Monolithic multi-bit weight cell for neuromorphic computing
- Patent number 12,260,324
- Issue date Mar 25, 2025
- Samsung Electronics Co., Ltd.
- Borna J. Obradovic
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
High-density neuromorphic computing element
- Patent number 11,983,622
- Issue date May 14, 2024
- Samsung Electronics Co., Ltd.
- Borna J. Obradovic
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Multi-bit, SoC-compatible neuromorphic weight cell using ferroelect...
- Patent number 11,727,258
- Issue date Aug 15, 2023
- Samsung Electronics Co., Ltd.
- Borna J. Obradovic
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
High-density neuromorphic computing element
- Patent number 11,586,901
- Issue date Feb 21, 2023
- Samsung Electronics Co., Ltd.
- Borna J. Obradovic
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method and system for training of neural networks using continuousl...
- Patent number 11,574,193
- Issue date Feb 7, 2023
- Samsung Electronics Co., Ltd.
- Borna J. Obradovic
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method of forming multi-threshold voltage devices and devices so fo...
- Patent number 11,476,121
- Issue date Oct 18, 2022
- Samsung Electronics Co., Ltd.
- Wei-E Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-bit, SoC-compatible neuromorphic weight cell using ferroelect...
- Patent number 11,461,620
- Issue date Oct 4, 2022
- Samsung Electronics Co., Ltd.
- Borna J. Obradovic
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor device including a repeater/buffer at upper metal rou...
- Patent number 11,404,405
- Issue date Aug 2, 2022
- Samsung Electronics Co., Ltd.
- Wei-E Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for providing a variation resistant magnetic junc...
- Patent number 11,290,110
- Issue date Mar 29, 2022
- Samsung Electronics Co., Ltd.
- Borna J. Obradovic
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Field effect transistor with decoupled channel and methods of manuf...
- Patent number 10,964,698
- Issue date Mar 30, 2021
- Samsung Electronics Co., Ltd.
- Mark S. Rodder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with reduced extension resistance and methods of manufacturi...
- Patent number 10,957,786
- Issue date Mar 23, 2021
- Samsung Electronics Co., Ltd.
- Joon Goo Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low current leakage finFET and methods of making the same
- Patent number 10,930,768
- Issue date Feb 23, 2021
- Samsung Electronics Co., Ltd.
- Joon Goo Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic multi-bit weight cell for neuromorphic computing
- Patent number 10,909,449
- Issue date Feb 2, 2021
- Samsung Electronics Co., Ltd.
- Borna J. Obradovic
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method and system for performing analog complex vector-matrix multi...
- Patent number 10,878,317
- Issue date Dec 29, 2020
- Samsung Electronics Co., Ltd.
- Ryan M. Hatcher
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
High-density neuromorphic computing element
- Patent number 10,860,923
- Issue date Dec 8, 2020
- Samsung Electronics Co., Ltd.
- Borna J. Obradovic
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor device including a repeater/buffer at upper metal rou...
- Patent number 10,854,591
- Issue date Dec 1, 2020
- Samsung Electronics Co., Ltd.
- Wei-E Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bi-directional weight cell
- Patent number 10,739,186
- Issue date Aug 11, 2020
- Samsung Electronics Co., Ltd.
- Ryan M. Hatcher
- G01 - MEASURING TESTING
Information Patent Grant
Field effect transistor with decoupled channel and methods of manuf...
- Patent number 10,700,068
- Issue date Jun 30, 2020
- Samsung Electronics Co., Ltd.
- Mark S. Rodder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric-based memory cell usable in on-logic chip memory
- Patent number 10,679,688
- Issue date Jun 9, 2020
- Samsung Electronics Co., Ltd.
- Titash Rakshit
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for selectively increasing silicon fin area for vertical fie...
- Patent number 10,644,031
- Issue date May 5, 2020
- Samsung Electronics Co., Ltd.
- Joon Goo Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device with strong polarization coupling
- Patent number 10,614,868
- Issue date Apr 7, 2020
- Samsung Electronics Co., Ltd.
- Jorge A. Kittl
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of providing source and drain doping for CMOS architecture i...
- Patent number 10,586,738
- Issue date Mar 10, 2020
- Samsung Electronics Co., Ltd.
- Wei-E Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selectorless 3D stackable memory
- Patent number 10,585,630
- Issue date Mar 10, 2020
- Samsung Electronics Co., Ltd.
- Titash Rakshit
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Dielectric separation of partial GAA FETs
- Patent number 10,566,330
- Issue date Feb 18, 2020
- Samsung Electronics Co., Ltd.
- Mark S. Rodder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for selectively increasing silicon fin area for vertical fie...
- Patent number 10,497,719
- Issue date Dec 3, 2019
- Samsung Electronics Co., Ltd.
- Joon Goo Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FE-FET-based XNOR cell usable in neuromorphic computing
- Patent number 10,461,751
- Issue date Oct 29, 2019
- Samsung Electronics Co., Ltd.
- Borna J. Obradovic
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method of forming multi-threshold voltage devices and devices so fo...
- Patent number 10,446,400
- Issue date Oct 15, 2019
- Samsung Electronics Co., Ltd.
- Wei-E Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with stacked nanowire-like channels and met...
- Patent number 10,381,271
- Issue date Aug 13, 2019
- Samsung Electronics Co., Ltd.
- Mark S. Rodder
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Field effect transistor with stacked nanowire-like channels and met...
- Patent number 10,312,152
- Issue date Jun 4, 2019
- Samsung Electronics Co., Ltd.
- Mark S. Rodder
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Methods of forming semiconductor devices including conductive conta...
- Patent number 10,297,673
- Issue date May 21, 2019
- Samsung Electronics Co., Ltd.
- Jorge A. Kittl
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH-DENSITY NEUROMORPHIC COMPUTING ELEMENT
- Publication number 20240256848
- Publication date Aug 1, 2024
- Samsung Electronics Co., Ltd.
- Borna J. Obradovic
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
HIGH-DENSITY NEUROMORPHIC COMPUTING ELEMENT
- Publication number 20230206053
- Publication date Jun 29, 2023
- Samsung Electronics Co., Ltd.
- Borna J. Obradovic
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MULTI-BIT, SoC-COMPATIBLE NEUROMORPHIC WEIGHT CELL USING FERROELECT...
- Publication number 20230004789
- Publication date Jan 5, 2023
- Samsung Electronics Co., Ltd.
- Borna J. Obradovic
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MONOLITHIC MULTI-BIT WEIGHT CELL FOR NEUROMORPHIC COMPUTING
- Publication number 20210117769
- Publication date Apr 22, 2021
- Samsung Electronics Co., Ltd.
- Borna J. Obradovic
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
HIGH-DENSITY NEUROMORPHIC COMPUTING ELEMENT
- Publication number 20210056401
- Publication date Feb 25, 2021
- Samsung Electronics Co., Ltd.
- Borna J. Obradovic
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A REPEATER/BUFFER AT UPPER METAL ROU...
- Publication number 20200381414
- Publication date Dec 3, 2020
- Samsung Electronics Co., Ltd.
- Wei-E Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH DECOUPLED CHANNEL AND METHODS OF MANUF...
- Publication number 20200279849
- Publication date Sep 3, 2020
- Samsung Electronics Co., Ltd.
- Mark S. Rodder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW CURRENT LEAKAGE FINFET AND METHODS OF MAKING THE SAME
- Publication number 20200127125
- Publication date Apr 23, 2020
- Samsung Electronics Co., Ltd.
- Joon Goo Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH REDUCED EXTENSION RESISTANCE AND METHODS OF MANUFACTURI...
- Publication number 20200127123
- Publication date Apr 23, 2020
- Samsung Electronics Co., Ltd.
- Joon Goo Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR SELECTIVELY INCREASING SILICON FIN AREA FOR VERTICAL FIE...
- Publication number 20200066762
- Publication date Feb 27, 2020
- Samsung Electronics Co., Ltd.
- Joon Goo Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING MULTI-THRESHOLD VOLTAGE DEVICES AND DEVICES SO FO...
- Publication number 20190385856
- Publication date Dec 19, 2019
- Samsung Electronics Co., Ltd.
- Wei-E Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR TRAINING OF NEURAL NETS
- Publication number 20190332943
- Publication date Oct 31, 2019
- Samsung Electronics Co., Ltd.
- Borna J. Obradovic
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
FERROELECTRIC-BASED MEMORY CELL USABLE IN ON-LOGIC CHIP MEMORY
- Publication number 20190318775
- Publication date Oct 17, 2019
- Samsung Electronics Co., Ltd.
- Titash Rakshit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE WITH STRONG POLARIZATION COUPLING
- Publication number 20190318774
- Publication date Oct 17, 2019
- Samsung Electronics Co., Ltd.
- Jorge A. Kittl
- G11 - INFORMATION STORAGE
Information Patent Application
MOS DEVICE WITH STRONG POLARIZATION COUPLING
- Publication number 20190319108
- Publication date Oct 17, 2019
- Samsung Electronics Co., Ltd.
- Jorge A. Kittl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FE-FET-BASED XNOR CELL USABLE IN NEUROMORPHIC COMPUTING
- Publication number 20190280694
- Publication date Sep 12, 2019
- Samsung Electronics Co., Ltd.
- Borna J. Obradovic
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
DIELECTRIC SEPARATION OF PARTIAL GAA FETS
- Publication number 20190181140
- Publication date Jun 13, 2019
- Samsung Electronics Co., Ltd.
- Mark S. Rodder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BI-DIRECTIONAL WEIGHT CELL
- Publication number 20190154493
- Publication date May 23, 2019
- Samsung Electronics Co., Ltd.
- Ryan M. Hatcher
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
FIELD EFFECT TRANSISTOR WITH DECOUPLED CHANNEL AND METHODS OF MANUF...
- Publication number 20190148508
- Publication date May 16, 2019
- Samsung Electronics Co., Ltd.
- Mark S. Rodder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR SELECTIVELY INCREASING SILICON FIN AREA FOR VERTICAL FIE...
- Publication number 20190148410
- Publication date May 16, 2019
- Samsung Electronics Co., Ltd.
- Joon Goo Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PROVIDING SOURCE AND DRAIN DOPING FOR CMOS ARCHITECTURE I...
- Publication number 20190131182
- Publication date May 2, 2019
- Samsung Electronics Co., Ltd.
- Wei-E Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR PROVIDING A VARIATION RESISTANT MAGNETIC JUNC...
- Publication number 20190131977
- Publication date May 2, 2019
- Samsung Electronics Co., Ltd.
- Borna J. Obradovic
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METHOD OF FORMING MULTI-THRESHOLD VOLTAGE DEVICES AND DEVICES SO FO...
- Publication number 20190122891
- Publication date Apr 25, 2019
- Samsung Electronics Co., Ltd.
- Wei-E Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTORLESS, 3D STACKABLE CROSSPOINT MEMORY
- Publication number 20190079701
- Publication date Mar 14, 2019
- Samsung Electronics Co., Ltd.
- Titash Rakshit
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METHOD AND SYSTEM FOR PERFORMING ANALOG COMPLEX VECTOR-MATRIX MULTI...
- Publication number 20190080230
- Publication date Mar 14, 2019
- Samsung Electronics Co., Ltd.
- Ryan M. Hatcher
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
VARIABLE PRECISION NEUROMORPHIC ARCHITECTURE
- Publication number 20190026627
- Publication date Jan 24, 2019
- Samsung Electronics Co., Ltd.
- Ryan M. Hatcher
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Multi-Bit, SoC-Compatible Neuromorphic Weight Cell Using Ferroelect...
- Publication number 20190012593
- Publication date Jan 10, 2019
- Samsung Electronics Co., Ltd.
- Borna J. Obradovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHIC MULTI-BIT WEIGHT CELL FOR NEUROMORPHIC COMPUTING
- Publication number 20180300618
- Publication date Oct 18, 2018
- Samsung Electronics Co., Ltd.
- Borna J. Obradovic
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
FIELD EFFECT TRANSISTOR WITH STACKED NANOWIRE-LIKE CHANNELS AND MET...
- Publication number 20180286764
- Publication date Oct 4, 2018
- Samsung Electronics Co., Ltd.
- Mark S. Rodder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-DENSITY NEUROMORPHIC COMPUTING ELEMENT
- Publication number 20180174034
- Publication date Jun 21, 2018
- Samsung Electronics Co., Ltd.
- Borna J. Obradovic
- G06 - COMPUTING CALCULATING COUNTING

Borna J. Obradovic

Person

Patents Grantslast 30 patents

Monolithic multi-bit weight cell for neuromorphic computing

High-density neuromorphic computing element

Multi-bit, SoC-compatible neuromorphic weight cell using ferroelect...

High-density neuromorphic computing element

Method and system for training of neural networks using continuousl...

Method of forming multi-threshold voltage devices and devices so fo...

Multi-bit, SoC-compatible neuromorphic weight cell using ferroelect...

Semiconductor device including a repeater/buffer at upper metal rou...

Method and system for providing a variation resistant magnetic junc...

Field effect transistor with decoupled channel and methods of manuf...

FinFET with reduced extension resistance and methods of manufacturi...

Low current leakage finFET and methods of making the same

Monolithic multi-bit weight cell for neuromorphic computing

Method and system for performing analog complex vector-matrix multi...

High-density neuromorphic computing element

Semiconductor device including a repeater/buffer at upper metal rou...

Bi-directional weight cell

Field effect transistor with decoupled channel and methods of manuf...

Ferroelectric-based memory cell usable in on-logic chip memory

Method for selectively increasing silicon fin area for vertical fie...

Memory device with strong polarization coupling

Method of providing source and drain doping for CMOS architecture i...

Selectorless 3D stackable memory

Dielectric separation of partial GAA FETs

Method for selectively increasing silicon fin area for vertical fie...

FE-FET-based XNOR cell usable in neuromorphic computing

Method of forming multi-threshold voltage devices and devices so fo...

Field effect transistor with stacked nanowire-like channels and met...

Field effect transistor with stacked nanowire-like channels and met...

Methods of forming semiconductor devices including conductive conta...

Patents Applicationslast 30 patents

HIGH-DENSITY NEUROMORPHIC COMPUTING ELEMENT

HIGH-DENSITY NEUROMORPHIC COMPUTING ELEMENT

MULTI-BIT, SoC-COMPATIBLE NEUROMORPHIC WEIGHT CELL USING FERROELECT...

MONOLITHIC MULTI-BIT WEIGHT CELL FOR NEUROMORPHIC COMPUTING

HIGH-DENSITY NEUROMORPHIC COMPUTING ELEMENT

SEMICONDUCTOR DEVICE INCLUDING A REPEATER/BUFFER AT UPPER METAL ROU...

FIELD EFFECT TRANSISTOR WITH DECOUPLED CHANNEL AND METHODS OF MANUF...

LOW CURRENT LEAKAGE FINFET AND METHODS OF MAKING THE SAME

FINFET WITH REDUCED EXTENSION RESISTANCE AND METHODS OF MANUFACTURI...

METHOD FOR SELECTIVELY INCREASING SILICON FIN AREA FOR VERTICAL FIE...

METHOD OF FORMING MULTI-THRESHOLD VOLTAGE DEVICES AND DEVICES SO FO...

METHOD AND SYSTEM FOR TRAINING OF NEURAL NETS

FERROELECTRIC-BASED MEMORY CELL USABLE IN ON-LOGIC CHIP MEMORY

MEMORY DEVICE WITH STRONG POLARIZATION COUPLING

MOS DEVICE WITH STRONG POLARIZATION COUPLING

FE-FET-BASED XNOR CELL USABLE IN NEUROMORPHIC COMPUTING

DIELECTRIC SEPARATION OF PARTIAL GAA FETS

BI-DIRECTIONAL WEIGHT CELL

FIELD EFFECT TRANSISTOR WITH DECOUPLED CHANNEL AND METHODS OF MANUF...

METHOD FOR SELECTIVELY INCREASING SILICON FIN AREA FOR VERTICAL FIE...

METHOD OF PROVIDING SOURCE AND DRAIN DOPING FOR CMOS ARCHITECTURE I...

METHOD AND SYSTEM FOR PROVIDING A VARIATION RESISTANT MAGNETIC JUNC...

METHOD OF FORMING MULTI-THRESHOLD VOLTAGE DEVICES AND DEVICES SO FO...

SELECTORLESS, 3D STACKABLE CROSSPOINT MEMORY

METHOD AND SYSTEM FOR PERFORMING ANALOG COMPLEX VECTOR-MATRIX MULTI...

VARIABLE PRECISION NEUROMORPHIC ARCHITECTURE

Multi-Bit, SoC-Compatible Neuromorphic Weight Cell Using Ferroelect...

MONOLITHIC MULTI-BIT WEIGHT CELL FOR NEUROMORPHIC COMPUTING

FIELD EFFECT TRANSISTOR WITH STACKED NANOWIRE-LIKE CHANNELS AND MET...

HIGH-DENSITY NEUROMORPHIC COMPUTING ELEMENT