Brandon Jay Holybee

Person

Portland, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Directed self-assembly enabled patterning over metal layers using a...
- Patent number 12,266,527
- Issue date Apr 1, 2025
- Intel Corporation
- Gurpreet Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Directed self-assembly structures and techniques
- Patent number 12,012,473
- Issue date Jun 18, 2024
- Intel Corporation
- James Munro Blackwell
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SWITCHABLE UNDERLAYERS FOR EUV LITHOGRAPHY
- Publication number 20250110408
- Publication date Apr 3, 2025
- Intel Corporation
- Robert JORDAN
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
TECHNOLOGIES FOR BARRIER LAYERS IN PEROVSKITE TRANSISTORS
- Publication number 20250006841
- Publication date Jan 2, 2025
- Intel Corporation
- Arnab Sen Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NEGATIVE CAPACITANCE FIELD EFFECT TRANSISTOR (NCFET) DEVICES
- Publication number 20250006840
- Publication date Jan 2, 2025
- Intel Corporation
- Rachel A. Steinhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-TERMINAL FERROELECTRIC PEROVSKITE DIODE MEMORY ELEMENT
- Publication number 20250008852
- Publication date Jan 2, 2025
- Intel Corporation
- Punyashloka Debashis
Information Patent Application
PEROVSKITE OXIDE FIELD EFFECT TRANSISTOR WITH HIGHLY DOPED SOURCE A...
- Publication number 20250006791
- Publication date Jan 2, 2025
- Intel Corporation
- Rachel A. Steinhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-TYPE PEROVSKITE FERROELECTRIC FIELD EFFECT TRANSISTOR (FEFET) DEV...
- Publication number 20250006839
- Publication date Jan 2, 2025
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PEROVSKITE-BASED FIELD EFFECT TRANSISTOR (FET) DEVICES ENABLED BY E...
- Publication number 20240429301
- Publication date Dec 26, 2024
- Intel Corporation
- Rachel A. Steinhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TIN CARBOXYLATE PRECURSORS FOR METAL OXIDE RESIST LAYERS AND RELATE...
- Publication number 20240272547
- Publication date Aug 15, 2024
- Intel Corporation
- Charles Cameron Mokhtarzadeh
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
ION BEAM LITHOGRAPHY AND NANOENGINEERING
- Publication number 20240222073
- Publication date Jul 4, 2024
- Intel Corporation
- Shida Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF NOVEL DEVICES USING ION BEAMS
- Publication number 20240222126
- Publication date Jul 4, 2024
- Intel Corporation
- Mahmut Sami Kavrik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR ATOMIC LAYER DEPOSITION FOR FERROELECTRIC TRANSISTORS
- Publication number 20240120415
- Publication date Apr 11, 2024
- Intel Corporation
- Scott B. Clendenning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR PEROVSKITE TRANSISTORS
- Publication number 20240113212
- Publication date Apr 4, 2024
- Intel Corporation
- Ian Alexander Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR TRANSISTORS WITH A THIN-FILM FERROELECTRIC
- Publication number 20240113220
- Publication date Apr 4, 2024
- Intel Corporation
- Arnab Sen Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES
- Publication number 20240105810
- Publication date Mar 28, 2024
- Intel Corporation
- Rachel A. Steinhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED PEROVSKITE FERROELECTRIC FIELD EFFECT TRANSISTOR (FEFET) DE...
- Publication number 20240105822
- Publication date Mar 28, 2024
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES WITH LOW OPE...
- Publication number 20240097031
- Publication date Mar 21, 2024
- Intel Corporation
- Punyashloka Debashis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICES WITH PEROVSKITE FILMS
- Publication number 20230200081
- Publication date Jun 22, 2023
- Intel Corporation
- Arnab Sen Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GUIDED VIAS IN MICROELECTRONIC STRUCTURES
- Publication number 20220199540
- Publication date Jun 23, 2022
- Intel Corporation
- Gurpreet Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VIA OPENING RECTIFICATION USING LAMELLAR TRIBLOCK COPOLYMER, POLYME...
- Publication number 20220199462
- Publication date Jun 23, 2022
- Intel Corporation
- Gurpreet Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIRECTED SELF-ASSEMBLY STRUCTURES AND TECHNIQUES
- Publication number 20210375745
- Publication date Dec 2, 2021
- Intel Corporation, Santa Clara, CA
- James Munro Blackwell
- H01 - BASIC ELECTRIC ELEMENTS

Brandon Jay Holybee

Person

Patents Grantslast 30 patents

Directed self-assembly enabled patterning over metal layers using a...

Directed self-assembly structures and techniques

Patents Applicationslast 30 patents

SWITCHABLE UNDERLAYERS FOR EUV LITHOGRAPHY

TECHNOLOGIES FOR BARRIER LAYERS IN PEROVSKITE TRANSISTORS

NEGATIVE CAPACITANCE FIELD EFFECT TRANSISTOR (NCFET) DEVICES

TWO-TERMINAL FERROELECTRIC PEROVSKITE DIODE MEMORY ELEMENT

PEROVSKITE OXIDE FIELD EFFECT TRANSISTOR WITH HIGHLY DOPED SOURCE A...

P-TYPE PEROVSKITE FERROELECTRIC FIELD EFFECT TRANSISTOR (FEFET) DEV...

PEROVSKITE-BASED FIELD EFFECT TRANSISTOR (FET) DEVICES ENABLED BY E...

TIN CARBOXYLATE PRECURSORS FOR METAL OXIDE RESIST LAYERS AND RELATE...

ION BEAM LITHOGRAPHY AND NANOENGINEERING

FABRICATION OF NOVEL DEVICES USING ION BEAMS

TECHNOLOGIES FOR ATOMIC LAYER DEPOSITION FOR FERROELECTRIC TRANSISTORS

TECHNOLOGIES FOR PEROVSKITE TRANSISTORS

TECHNOLOGIES FOR TRANSISTORS WITH A THIN-FILM FERROELECTRIC

VERTICAL FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES

STACKED PEROVSKITE FERROELECTRIC FIELD EFFECT TRANSISTOR (FEFET) DE...

FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES WITH LOW OPE...

TRANSISTOR DEVICES WITH PEROVSKITE FILMS

GUIDED VIAS IN MICROELECTRONIC STRUCTURES

VIA OPENING RECTIFICATION USING LAMELLAR TRIBLOCK COPOLYMER, POLYME...

DIRECTED SELF-ASSEMBLY STRUCTURES AND TECHNIQUES