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Brenda L. VanMil
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Alexandria, VA, US
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Patents Grants
last 30 patents
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Patent Grant
Reduction of basal plane dislocations in epitaxial SiC
Patent number
9,464,366
Issue date
Oct 11, 2016
The United States of America, as represented by the Secretary of the Navy
Rachael L Myers-Ward
Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information
Patent Grant
Method of producing epitaxial layers with low basal plane dislocati...
Patent number
8,652,255
Issue date
Feb 18, 2014
The United States of America, as represented by the Secretary of the Navy
Robert E Stahlbush
C30 - CRYSTAL GROWTH
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Patent Grant
Tracking carbon to silicon ratio in situ during silicon carbide growth
Patent number
8,603,243
Issue date
Dec 10, 2013
The United States of America, as represented by the Secretary of the Navy
Brenda L VanMil
C30 - CRYSTAL GROWTH
Patents Applications
last 30 patents
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Patent Application
REDUCTION OF BASAL PLANE DISLOCATIONS IN EPITAXIAL SIC
Publication number
20110045281
Publication date
Feb 24, 2011
THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETA...
Rachael L. Myers-Ward
C30 - CRYSTAL GROWTH
Information
Patent Application
TRACKING CARBON TO SILICON RATIO IN SITU DURING SILICON CARBIDE GROWTH
Publication number
20100024719
Publication date
Feb 4, 2010
THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETA...
Brenda L. VanMil
C30 - CRYSTAL GROWTH
Information
Patent Application
METHOD OF PRODUCING EPITAXIAL LAYERS WITH LOW BASAL PLANE DISLOCATI...
Publication number
20090114148
Publication date
May 7, 2009
THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETA...
Robert E. Stahlbush
C30 - CRYSTAL GROWTH