Brennan Peterson

Person

Portland, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
High throughput TEM preparation processes and hardware for backside...
- Patent number 10,283,317
- Issue date May 7, 2019
- FEI Company
- Paul Keady
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
High throughput TEM preparation processes and hardware for backside...
- Patent number 9,653,260
- Issue date May 16, 2017
- FEI Company
- Paul Keady
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Measurement and endpointing of sample thickness
- Patent number 9,184,025
- Issue date Nov 10, 2015
- FEI Company
- Richard J. Young
- G01 - MEASURING TESTING
Information Patent Grant
Stressed barrier plug slot contact structure for transistor perform...
- Patent number 8,278,718
- Issue date Oct 2, 2012
- Intel Corporation
- Kevin J. Fischer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Measurement and endpointing of sample thickness
- Patent number 8,170,832
- Issue date May 1, 2012
- FEI Company
- Richard J. Young
- G01 - MEASURING TESTING
Information Patent Grant
Stressed barrier plug slot contact structure for transistor perform...
- Patent number 8,120,119
- Issue date Feb 21, 2012
- Intel Corporation
- Kevin J. Fischer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stressed barrier plug slot contact structure for transistor perform...
- Patent number 7,968,952
- Issue date Jun 28, 2011
- Intel Corporation
- Kevin J. Fischer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Barrier formation and structure to use in semiconductor devices
- Patent number 7,768,126
- Issue date Aug 3, 2010
- Intel Corporation
- Kevin Fischer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tuned tensile stress low resistivity slot contact structure for n-t...
- Patent number 7,719,062
- Issue date May 18, 2010
- Intel Corporation
- Kevin J. Fischer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Atomic layer deposited tantalum containing adhesion layer
- Patent number 7,605,469
- Issue date Oct 20, 2009
- Intel Corporation
- Steven W. Johnston
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Atomic layer deposited tantalum containing adhesion layer
- Patent number 7,601,637
- Issue date Oct 13, 2009
- Intel Corporation
- Steven W. Johnston
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing corrosion in copper damascene processes
- Patent number 7,582,558
- Issue date Sep 1, 2009
- Intel Corporation
- Vinay B. Chikarmane
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Barrier process/structure for transistor trench contact applications
- Patent number 7,525,197
- Issue date Apr 28, 2009
- Intel Corporation
- Vinay Chikarmane
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH THROUGHPUT TEM PREPARATION PROCESSES AND HARDWARE FOR BACKSIDE...
- Publication number 20170250055
- Publication date Aug 31, 2017
- FEI Company
- Paul Keady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Throughput TEM Preparation Processes and Hardware for Backside...
- Publication number 20130248354
- Publication date Sep 26, 2013
- Paul Keady
- G01 - MEASURING TESTING
Information Patent Application
MEASUREMENT AND ENDPOINTING OF SAMPLE THICKNESS
- Publication number 20120187285
- Publication date Jul 26, 2012
- FEI Company
- RICHARD J. YOUNG
- G01 - MEASURING TESTING
Information Patent Application
STRESSED BARRIER PLUG SLOT CONTACT STRUCTURE FOR TRANSISTOR PERFORM...
- Publication number 20120068273
- Publication date Mar 22, 2012
- Kevin J. Fischer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESSED BARRIER PLUG SLOT CONTACT STRUCTURE FOR TRANSISTOR PERFORM...
- Publication number 20110133259
- Publication date Jun 9, 2011
- Kevin J. Fischer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEASUREMENT AND ENDPOINTING OF SAMPLE THICKNESS
- Publication number 20100116977
- Publication date May 13, 2010
- FEI Company
- Richard J. Young
- G01 - MEASURING TESTING
Information Patent Application
Barrier process/structure for transistor trench contact applications
- Publication number 20090170309
- Publication date Jul 2, 2009
- Vinay Chikarmane
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Atomic layer deposited tantalum containing adhesion layer
- Publication number 20090155998
- Publication date Jun 18, 2009
- Steven W. Johnston
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Tuned tensile stress low resistivity slot contact structure for n-t...
- Publication number 20080157224
- Publication date Jul 3, 2008
- Kevin J. Fischer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stressed barrier plug slot contact structure for transistor perform...
- Publication number 20080157208
- Publication date Jul 3, 2008
- Kevin J. Fischer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Barrier formation and structure to use in semiconductor devices
- Publication number 20080079165
- Publication date Apr 3, 2008
- Kevin Fischer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Through contact layer opening silicide and barrier layer formation
- Publication number 20080076246
- Publication date Mar 27, 2008
- Brennan L. Peterson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Barrier process/structure for transistor trench contact applications
- Publication number 20080026556
- Publication date Jan 31, 2008
- Vinay Chikarmane
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reducing corrosion in copper damascene processes
- Publication number 20080014746
- Publication date Jan 17, 2008
- Vinay B. Chikarmane
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Atomic layer deposited tantalum containing adhesion layer
- Publication number 20060003581
- Publication date Jan 5, 2006
- Steven W. Johnston
- H01 - BASIC ELECTRIC ELEMENTS

Brennan Peterson

Person

Patents Grantslast 30 patents

High throughput TEM preparation processes and hardware for backside...

High throughput TEM preparation processes and hardware for backside...

Measurement and endpointing of sample thickness

Stressed barrier plug slot contact structure for transistor perform...

Measurement and endpointing of sample thickness

Stressed barrier plug slot contact structure for transistor perform...

Stressed barrier plug slot contact structure for transistor perform...

Barrier formation and structure to use in semiconductor devices

Tuned tensile stress low resistivity slot contact structure for n-t...

Atomic layer deposited tantalum containing adhesion layer

Atomic layer deposited tantalum containing adhesion layer

Reducing corrosion in copper damascene processes

Barrier process/structure for transistor trench contact applications

Patents Applicationslast 30 patents

HIGH THROUGHPUT TEM PREPARATION PROCESSES AND HARDWARE FOR BACKSIDE...

High Throughput TEM Preparation Processes and Hardware for Backside...

MEASUREMENT AND ENDPOINTING OF SAMPLE THICKNESS

STRESSED BARRIER PLUG SLOT CONTACT STRUCTURE FOR TRANSISTOR PERFORM...

STRESSED BARRIER PLUG SLOT CONTACT STRUCTURE FOR TRANSISTOR PERFORM...

MEASUREMENT AND ENDPOINTING OF SAMPLE THICKNESS

Barrier process/structure for transistor trench contact applications

Atomic layer deposited tantalum containing adhesion layer

Tuned tensile stress low resistivity slot contact structure for n-t...

Stressed barrier plug slot contact structure for transistor perform...

Barrier formation and structure to use in semiconductor devices

Through contact layer opening silicide and barrier layer formation

Barrier process/structure for transistor trench contact applications

Reducing corrosion in copper damascene processes

Atomic layer deposited tantalum containing adhesion layer