Brent A. Wacaser

Person

Putnam Valley, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Nanocavity monolayer laser monolithically integrated with LED pump
- Patent number 11,742,632
- Issue date Aug 29, 2023
- International Business Machines Corporation
- Jeehwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial Josephson junction transmon device
- Patent number 11,563,162
- Issue date Jan 24, 2023
- International Business Machines Corporation
- Steven J. Holmes
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Silicon-based Josephson junction for qubit devices
- Patent number 11,411,160
- Issue date Aug 9, 2022
- International Business Machines Corporation
- Steven J. Holmes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Glassy carbon mask for immersion implant and selective laser anneal
- Patent number 11,349,061
- Issue date May 31, 2022
- International Business Machines Corporation
- Steven J. Holmes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electron channeling pattern acquisition from small crystalline areas
- Patent number 11,003,942
- Issue date May 11, 2021
- International Business Machines Corporation
- Stephen W. Bedell
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
III-V and Zn based finFET structure formed using low temperature de...
- Patent number 10,777,665
- Issue date Sep 15, 2020
- International Business Machines Corporation
- Yun Seog Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Growing Groups III-V lateral nanowire channels
- Patent number 10,763,340
- Issue date Sep 1, 2020
- International Business Machines Corporation
- Sanghoon Lee
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Post growth heteroepitaxial layer separation for defect reduction i...
- Patent number 10,755,925
- Issue date Aug 25, 2020
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enabling high throughput electron channeling contrast imaging (ECCI...
- Patent number 10,714,303
- Issue date Jul 14, 2020
- International Business Machines Corporation
- Brent A. Wacaser
- G01 - MEASURING TESTING
Information Patent Grant
Dual-material mandrel for epitaxial crystal growth on silicon
- Patent number 10,615,178
- Issue date Apr 7, 2020
- International Business Machines Corporation
- Sanghoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Post growth heteroepitaxial layer separation for defect reduction i...
- Patent number 10,460,937
- Issue date Oct 29, 2019
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Post growth heteroepitaxial layer separation for defect reduction i...
- Patent number 10,453,683
- Issue date Oct 22, 2019
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanocavity monolayer laser monolithically integrated with LED pump
- Patent number 10,431,956
- Issue date Oct 1, 2019
- International Business Machines Corporation
- Jeehwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a III-V and Zn based finFET structure using low t...
- Patent number 10,431,672
- Issue date Oct 1, 2019
- International Business Machines Corporation
- Yun Seog Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electron channeling pattern acquisition from small crystalline areas
- Patent number 10,417,519
- Issue date Sep 17, 2019
- International Business Machines Corporation
- Stephen W. Bedell
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
III-V fin generation by lateral growth on silicon sidewall
- Patent number 10,319,838
- Issue date Jun 11, 2019
- International Business Machines Corporation
- Sanghoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance contact for semiconductor devices
- Patent number 10,157,993
- Issue date Dec 18, 2018
- International Business Machines Corporation
- Joel P. de Souza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electron channeling pattern acquisition from small crystalline areas
- Patent number 10,127,649
- Issue date Nov 13, 2018
- International Business Machines Corporation
- Stephen W. Bedell
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Growing groups III-V lateral nanowire channels
- Patent number 10,103,242
- Issue date Oct 16, 2018
- International Business Machines Corporation
- Sanghoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V FIN generation by lateral growth on silicon sidewall
- Patent number 10,096,697
- Issue date Oct 9, 2018
- International Business Machines Corporation
- Sanghoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V fin generation by lateral growth on silicon sidewall
- Patent number 10,068,994
- Issue date Sep 4, 2018
- International Business Machines Corporation
- Sanghoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced defect reduction for heteroepitaxy by seed shape engineering
- Patent number 10,043,663
- Issue date Aug 7, 2018
- International Business Machines Corporation
- Cheng-Wei Cheng
- C30 - CRYSTAL GROWTH
Information Patent Grant
Highly responsive III-V photodetectors using ZnO:Al as n-type emitter
- Patent number 10,043,920
- Issue date Aug 7, 2018
- International Business Machines Corporation
- Jeehwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction interlayer dielectric for reducing leakage current in semi...
- Patent number 10,038,057
- Issue date Jul 31, 2018
- International Business Machines Corporation
- Joel P. de Souza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduction of defect induced leakage in III-V semiconductor devices
- Patent number 10,002,929
- Issue date Jun 19, 2018
- International Business Machines Corporation
- Joel P. de Souza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Post growth defect reduction for heteroepitaxial materials
- Patent number 9,972,688
- Issue date May 15, 2018
- International Business Machines Corporation
- John A. Ott
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sidewall spacer for integration of group III nitride with patterned...
- Patent number 9,935,175
- Issue date Apr 3, 2018
- International Business Machines Corporation
- Ko-Tao Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduction of defect induced leakage in III-V semiconductor devices
- Patent number 9,905,637
- Issue date Feb 27, 2018
- International Business Machines Corporation
- Joel P. de Souza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Growing groups III-V lateral nanowire channels
- Patent number 9,859,397
- Issue date Jan 2, 2018
- International Business Machines Corporation
- Sanghoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Automatic alignment for high throughput electron channeling contras...
- Patent number 9,859,091
- Issue date Jan 2, 2018
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
EPITAXIAL JOSEPHSON JUNCTION TRANSMON DEVICE
- Publication number 20230122482
- Publication date Apr 20, 2023
- International Business Machines Corporation
- Steven J. Holmes
- B82 - NANO-TECHNOLOGY
Information Patent Application
EPITAXIAL JOSEPHSON JUNCTION TRANSMON DEVICE
- Publication number 20220181535
- Publication date Jun 9, 2022
- International Business Machines Corporation
- Steven J. Holmes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GLASSY CARBON MASK FOR IMMERSION IMPLANT AND SELECTIVE LASER ANNEAL
- Publication number 20210384405
- Publication date Dec 9, 2021
- International Business Machines Corporation
- Steven J. Holmes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-BASED JOSEPHSON JUNCTION FOR QUBIT DEVICES
- Publication number 20210226114
- Publication date Jul 22, 2021
- International Business Machines Corporation
- Steven J. Holmes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Enabling High Throughput Electron Channeling Contrast Imaging (ECCI...
- Publication number 20200027690
- Publication date Jan 23, 2020
- International Business Machines Corporation
- Brent A. Wacaser
- G01 - MEASURING TESTING
Information Patent Application
III-V AND ZN BASED FINFET STRUCTURE FORMED USING LOW TEMPERATURE DE...
- Publication number 20190371921
- Publication date Dec 5, 2019
- International Business Machines Corporation
- Yun Seog LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHICALLY INTEGRATED LASER WITH LED PUMP
- Publication number 20190363514
- Publication date Nov 28, 2019
- International Business Machines Corporation
- Jeehwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHICALLY INTEGRATED LASER WITH LED PUMP
- Publication number 20190363513
- Publication date Nov 28, 2019
- International Business Machines Corporation
- Jeehwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POST GROWTH HETEROEPITAXIAL LAYER SEPARATION FOR DEFECT REDUCTION I...
- Publication number 20190341250
- Publication date Nov 7, 2019
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A III-V AND ZN BASED FINFET STRUCTURE USING LOW T...
- Publication number 20190326417
- Publication date Oct 24, 2019
- International Business Machines Corporation
- Yun Seog LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRON CHANNELING PATTERN ACQUISITION FROM SMALL CRYSTALLINE AREAS
- Publication number 20190318193
- Publication date Oct 17, 2019
- International Business Machines Corporation
- Stephen W. Bedell
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
GROWING GROUPS III-V LATERAL NANOWIRE CHANNELS
- Publication number 20190013393
- Publication date Jan 10, 2019
- International Business Machines Corporation
- Sanghoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POST GROWTH HETEROEPITAXIAL LAYER SEPARATION FOR DEFECT REDUCTION I...
- Publication number 20180277367
- Publication date Sep 27, 2018
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POST GROWTH HETEROEPITAXIAL LAYER SEPARATION FOR DEFECT REDUCTION I...
- Publication number 20180277368
- Publication date Sep 27, 2018
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRON CHANNELING PATTERN ACQUISITION FROM SMALL CRYSTALLINE AREAS
- Publication number 20180211378
- Publication date Jul 26, 2018
- International Business Machines Corporation
- Stephen W. Bedell
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ELECTRON CHANNELING PATTERN ACQUISITION FROM SMALL CRYSTALLINE AREAS
- Publication number 20180211376
- Publication date Jul 26, 2018
- International Business Machines Corporation
- Stephen W. Bedell
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
III-V FIN Generation By Lateral Growth On Silicon Sidewall
- Publication number 20180145154
- Publication date May 24, 2018
- International Business Machines Corporation
- Sanghoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V FIN Generation By Lateral Growth On Silicon Sidewall
- Publication number 20180145155
- Publication date May 24, 2018
- International Business Machines Corporation
- Sanghoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AUTOMATIC ALIGNMENT FOR HIGH THROUGHPUT ELECTRON CHANNELING CONTRAS...
- Publication number 20170365441
- Publication date Dec 21, 2017
- International Business Machines Corporation
- Stephen W. Bedell
- G01 - MEASURING TESTING
Information Patent Application
HIGHLY RESPONSIVE III-V PHOTODETECTORS USING ZnO:Al AS N-TYPE EMITTER
- Publication number 20170263788
- Publication date Sep 14, 2017
- International Business Machines Corporation
- Jeehwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROWING GROUPS III-V LATERAL NANOWIRE CHANNELS
- Publication number 20170236902
- Publication date Aug 17, 2017
- International Business Machines Corporation
- Sanghoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JUNCTION INTERLAYER DIELECTRIC FOR REDUCING LEAKAGE CURRENT IN SEMI...
- Publication number 20170179230
- Publication date Jun 22, 2017
- International Business Machines Corporation
- Joel P. de Souza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POST GROWTH DEFECT REDUCTION FOR HETEROEPITAXIAL MATERIALS
- Publication number 20170162657
- Publication date Jun 8, 2017
- International Business Machines Corporation
- JOHN A. OTT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED DEFECT REDUCTION FOR HETEROEPITAXY BY SEED SHAPE ENGINEERING
- Publication number 20170140919
- Publication date May 18, 2017
- International Business Machines Corporation
- Cheng-Wei Cheng
- C30 - CRYSTAL GROWTH
Information Patent Application
REDUCTION OF DEFECT INDUCED LEAKAGE IN III-V SEMICONDUCTOR DEVICES
- Publication number 20170110546
- Publication date Apr 20, 2017
- International Business Machines Corporation
- Joel P. de Souza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V FIN Generation by Lateral Growth on Silicon Sidewall
- Publication number 20170104086
- Publication date Apr 13, 2017
- International Business Machines Corporation
- Sanghoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL-MATERIAL MANDREL FOR EPITAXIAL CRYSTAL GROWTH ON SILICON
- Publication number 20170077146
- Publication date Mar 16, 2017
- International Business Machines Corporation
- Sanghoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROWING GROUPS III-V LATERAL NANOWIRE CHANNELS
- Publication number 20170047399
- Publication date Feb 16, 2017
- International Business Machines Corporation
- Sanghoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROWING GROUPS III-V LATERAL NANOWIRE CHANNELS
- Publication number 20170047424
- Publication date Feb 16, 2017
- International Business Machines Corporation
- Sanghoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL-MATERIAL MANDREL FOR EPITAXIAL CRYSTAL GROWTH ON SILICON
- Publication number 20170025500
- Publication date Jan 26, 2017
- International Business Machines Corporation
- Sanghoon Lee
- H01 - BASIC ELECTRIC ELEMENTS

Brent A. Wacaser

Person

Patents Grantslast 30 patents

Nanocavity monolayer laser monolithically integrated with LED pump

Epitaxial Josephson junction transmon device

Silicon-based Josephson junction for qubit devices

Glassy carbon mask for immersion implant and selective laser anneal

Electron channeling pattern acquisition from small crystalline areas

III-V and Zn based finFET structure formed using low temperature de...

Growing Groups III-V lateral nanowire channels

Post growth heteroepitaxial layer separation for defect reduction i...

Enabling high throughput electron channeling contrast imaging (ECCI...

Dual-material mandrel for epitaxial crystal growth on silicon

Post growth heteroepitaxial layer separation for defect reduction i...

Post growth heteroepitaxial layer separation for defect reduction i...

Nanocavity monolayer laser monolithically integrated with LED pump

Method of forming a III-V and Zn based finFET structure using low t...

Electron channeling pattern acquisition from small crystalline areas

III-V fin generation by lateral growth on silicon sidewall

Low resistance contact for semiconductor devices

Electron channeling pattern acquisition from small crystalline areas

Growing groups III-V lateral nanowire channels

III-V FIN generation by lateral growth on silicon sidewall

III-V fin generation by lateral growth on silicon sidewall

Enhanced defect reduction for heteroepitaxy by seed shape engineering

Highly responsive III-V photodetectors using ZnO:Al as n-type emitter

Junction interlayer dielectric for reducing leakage current in semi...

Reduction of defect induced leakage in III-V semiconductor devices

Post growth defect reduction for heteroepitaxial materials

Sidewall spacer for integration of group III nitride with patterned...

Reduction of defect induced leakage in III-V semiconductor devices

Growing groups III-V lateral nanowire channels

Automatic alignment for high throughput electron channeling contras...

Patents Applicationslast 30 patents

EPITAXIAL JOSEPHSON JUNCTION TRANSMON DEVICE

EPITAXIAL JOSEPHSON JUNCTION TRANSMON DEVICE

GLASSY CARBON MASK FOR IMMERSION IMPLANT AND SELECTIVE LASER ANNEAL

SILICON-BASED JOSEPHSON JUNCTION FOR QUBIT DEVICES

Enabling High Throughput Electron Channeling Contrast Imaging (ECCI...

III-V AND ZN BASED FINFET STRUCTURE FORMED USING LOW TEMPERATURE DE...

MONOLITHICALLY INTEGRATED LASER WITH LED PUMP

MONOLITHICALLY INTEGRATED LASER WITH LED PUMP

POST GROWTH HETEROEPITAXIAL LAYER SEPARATION FOR DEFECT REDUCTION I...

METHOD OF FORMING A III-V AND ZN BASED FINFET STRUCTURE USING LOW T...

ELECTRON CHANNELING PATTERN ACQUISITION FROM SMALL CRYSTALLINE AREAS

GROWING GROUPS III-V LATERAL NANOWIRE CHANNELS

POST GROWTH HETEROEPITAXIAL LAYER SEPARATION FOR DEFECT REDUCTION I...

POST GROWTH HETEROEPITAXIAL LAYER SEPARATION FOR DEFECT REDUCTION I...

ELECTRON CHANNELING PATTERN ACQUISITION FROM SMALL CRYSTALLINE AREAS

ELECTRON CHANNELING PATTERN ACQUISITION FROM SMALL CRYSTALLINE AREAS

III-V FIN Generation By Lateral Growth On Silicon Sidewall

III-V FIN Generation By Lateral Growth On Silicon Sidewall

AUTOMATIC ALIGNMENT FOR HIGH THROUGHPUT ELECTRON CHANNELING CONTRAS...

HIGHLY RESPONSIVE III-V PHOTODETECTORS USING ZnO:Al AS N-TYPE EMITTER

GROWING GROUPS III-V LATERAL NANOWIRE CHANNELS

JUNCTION INTERLAYER DIELECTRIC FOR REDUCING LEAKAGE CURRENT IN SEMI...

POST GROWTH DEFECT REDUCTION FOR HETEROEPITAXIAL MATERIALS

ENHANCED DEFECT REDUCTION FOR HETEROEPITAXY BY SEED SHAPE ENGINEERING

REDUCTION OF DEFECT INDUCED LEAKAGE IN III-V SEMICONDUCTOR DEVICES

III-V FIN Generation by Lateral Growth on Silicon Sidewall

DUAL-MATERIAL MANDREL FOR EPITAXIAL CRYSTAL GROWTH ON SILICON

GROWING GROUPS III-V LATERAL NANOWIRE CHANNELS

GROWING GROUPS III-V LATERAL NANOWIRE CHANNELS

DUAL-MATERIAL MANDREL FOR EPITAXIAL CRYSTAL GROWTH ON SILICON