Brett Adam Hull

Person

Raleigh, NC, US

People

Patents Grantslast 30 patents

Information Patent Grant
Power semiconductor device with reduced strain
- Patent number 12,159,909
- Issue date Dec 3, 2024
- Wolfspeed, Inc.
- Daniel Jenner Lichtenwalner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with reduced strain
- Patent number 11,869,948
- Issue date Jan 9, 2024
- Wolfspeed, Inc.
- Daniel Jenner Lichtenwalner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor devices having gate trenches and buried edge te...
- Patent number 11,837,629
- Issue date Dec 5, 2023
- Wolfspeed, Inc.
- Daniel J. Lichtenwalner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor power devices having gate dielectric layers with impr...
- Patent number 11,222,955
- Issue date Jan 11, 2022
- Wolfspeed, Inc.
- Daniel Jenner Lichtenwalner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power switching devices with high dV/dt capability and methods of m...
- Patent number 11,184,001
- Issue date Nov 23, 2021
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structures having a deep recessed P+ junction and method...
- Patent number 10,886,396
- Issue date Jan 5, 2021
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor devices having gate trenches and buried edge te...
- Patent number 10,861,931
- Issue date Dec 8, 2020
- Cree, Inc.
- Daniel J. Lichtenwalner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor devices having top-side metallization structure...
- Patent number 10,847,647
- Issue date Nov 24, 2020
- Cree, Inc.
- Shadi Sabri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structures having a deep recessed P+ junction and method...
- Patent number 10,847,645
- Issue date Nov 24, 2020
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structures having reduced electrical field at the gate o...
- Patent number 10,840,367
- Issue date Nov 17, 2020
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power switching devices with DV/DT capability and methods of making...
- Patent number 10,601,413
- Issue date Mar 24, 2020
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power Schottky diodes having closely-spaced deep blocking junctions...
- Patent number 10,510,905
- Issue date Dec 17, 2019
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structures having a deep recessed P+ junction and method...
- Patent number 10,115,815
- Issue date Oct 30, 2018
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Floating bond pad for power semiconductor devices
- Patent number 10,068,834
- Issue date Sep 4, 2018
- Cree, Inc.
- Sarah Kay Haney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor devices having gate trenches with implanted sid...
- Patent number 9,887,287
- Issue date Feb 6, 2018
- Cree, Inc.
- Daniel J. Lichtenwalner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including epitaxial layers and related methods
- Patent number 9,640,652
- Issue date May 2, 2017
- Cree, Inc.
- Brett Adam Hull
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structures having reduced electrical field at the gate o...
- Patent number 9,530,844
- Issue date Dec 27, 2016
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power silicon carbide (SiC) PiN diodes having low forward volt...
- Patent number 9,455,356
- Issue date Sep 27, 2016
- Cree, Inc.
- Mrinal Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming SiC MOSFETs with high inversion layer mobility
- Patent number 8,536,066
- Issue date Sep 17, 2013
- Cree, Inc.
- Mrinal K. Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including electrodes with integrated resistances
- Patent number 8,314,462
- Issue date Nov 20, 2012
- Cree, Inc.
- Brett Adam Hull
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming semiconductor devices including epitaxial layers...
- Patent number 8,288,220
- Issue date Oct 16, 2012
- Cree, Inc.
- Brett Adam Hull
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming SiC MOSFETs with high inversion layer mobility
- Patent number 7,727,904
- Issue date Jun 1, 2010
- Cree, Inc.
- Mrinal K. Das
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
POWER SEMICONDUCTOR DEVICE WITH REDUCED STRAIN
- Publication number 20240072131
- Publication date Feb 29, 2024
- Wolfspeed, Inc.
- Daniel Jenner Lichtenwalner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE WITH REDUCED STRAIN
- Publication number 20220262909
- Publication date Aug 18, 2022
- Cree, Inc.
- Daniel Jenner Lichtenwalner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PASSIVATION STRUCTURES FOR SEMICONDUCTOR DEVICES
- Publication number 20220140132
- Publication date May 5, 2022
- Cree, Inc.
- Edward Robert Van Brunt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR POWER DEVICES HAVING GATE DIELECTRIC LAYERS WITH IMPR...
- Publication number 20210336021
- Publication date Oct 28, 2021
- Cree, Inc.
- Daniel Jenner Lichtenwalner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICES HAVING GATE TRENCHES AND BURIED EDGE TE...
- Publication number 20210098568
- Publication date Apr 1, 2021
- Cree, Inc.
- Daniel J. Lichtenwalner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICES HAVING TOP-SIDE METALLIZATION STRUCTURE...
- Publication number 20200295174
- Publication date Sep 17, 2020
- Cree, Inc.
- Shadi Sabri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SWITCHING DEVICES WITH HIGH DV/DT CAPABILITY AND METHODS OF M...
- Publication number 20200212908
- Publication date Jul 2, 2020
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SWITCHING DEVICES WITH DV/DT CAPABILITY AND METHODS OF MAKING...
- Publication number 20190081624
- Publication date Mar 14, 2019
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURES HAVING A DEEP RECESSED P+ JUNCTION AND METHOD...
- Publication number 20190043980
- Publication date Feb 7, 2019
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SCHOTTKY DIODES HAVING CLOSELY-SPACED DEEP BLOCKING JUNCTIONS...
- Publication number 20190013416
- Publication date Jan 10, 2019
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICES HAVING GATE TRENCHES AND BURIED EDGE TE...
- Publication number 20180166530
- Publication date Jun 14, 2018
- Cree, Inc.
- Daniel J. Lichtenwalner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURES HAVING REDUCED ELECTRICAL FIELD AT THE GATE O...
- Publication number 20170053987
- Publication date Feb 23, 2017
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLOATING BOND PAD FOR POWER SEMICONDUCTOR DEVICES
- Publication number 20140246790
- Publication date Sep 4, 2014
- Cree, Inc.
- Sarah Kay Haney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURES HAVING A DEEP RECESSED P+ JUNCTION AND METHOD...
- Publication number 20140183552
- Publication date Jul 3, 2014
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURES HAVING REDUCED ELECTRICAL FIELD AT THE GATE O...
- Publication number 20140183553
- Publication date Jul 3, 2014
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING EPITAXIAL LAYERS AND RELATED METHODS
- Publication number 20130009221
- Publication date Jan 10, 2013
- Cree, Inc.
- Brett Adam Hull
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices Including Electrodes with Integrated Resistan...
- Publication number 20110024834
- Publication date Feb 3, 2011
- Brett Adam Hull
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Semiconductor Devices Including Epitaxial Layers...
- Publication number 20100244047
- Publication date Sep 30, 2010
- Cree, Inc.
- Brett Adam Hull
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING SIC MOSFETS WITH HIGH INVERSION LAYER MOBILITY
- Publication number 20100221924
- Publication date Sep 2, 2010
- Mrinal K. Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of forming SIC MOSFETs with high inversion layer mobility
- Publication number 20080233285
- Publication date Sep 25, 2008
- Cree, Inc.
- Mrinal K. Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High power silicon carbide (SiC) PiN diodes having low forward volt...
- Publication number 20070200115
- Publication date Aug 30, 2007
- Cree, Inc.
- Mrinal Das
- H01 - BASIC ELECTRIC ELEMENTS

Brett Adam Hull

Person

Patents Grantslast 30 patents

Power semiconductor device with reduced strain

Power semiconductor device with reduced strain

Power semiconductor devices having gate trenches and buried edge te...

Semiconductor power devices having gate dielectric layers with impr...

Power switching devices with high dV/dt capability and methods of m...

Transistor structures having a deep recessed P+ junction and method...

Power semiconductor devices having gate trenches and buried edge te...

Power semiconductor devices having top-side metallization structure...

Transistor structures having a deep recessed P+ junction and method...

Transistor structures having reduced electrical field at the gate o...

Power switching devices with DV/DT capability and methods of making...

Power Schottky diodes having closely-spaced deep blocking junctions...

Transistor structures having a deep recessed P+ junction and method...

Floating bond pad for power semiconductor devices

Power semiconductor devices having gate trenches with implanted sid...

Semiconductor devices including epitaxial layers and related methods

Transistor structures having reduced electrical field at the gate o...

High power silicon carbide (SiC) PiN diodes having low forward volt...

Methods of forming SiC MOSFETs with high inversion layer mobility

Semiconductor devices including electrodes with integrated resistances

Methods of forming semiconductor devices including epitaxial layers...

Methods of forming SiC MOSFETs with high inversion layer mobility

Patents Applicationslast 30 patents

POWER SEMICONDUCTOR DEVICE WITH REDUCED STRAIN

POWER SEMICONDUCTOR DEVICE WITH REDUCED STRAIN

PASSIVATION STRUCTURES FOR SEMICONDUCTOR DEVICES

SEMICONDUCTOR POWER DEVICES HAVING GATE DIELECTRIC LAYERS WITH IMPR...

POWER SEMICONDUCTOR DEVICES HAVING GATE TRENCHES AND BURIED EDGE TE...

POWER SEMICONDUCTOR DEVICES HAVING TOP-SIDE METALLIZATION STRUCTURE...

POWER SWITCHING DEVICES WITH HIGH DV/DT CAPABILITY AND METHODS OF M...

POWER SWITCHING DEVICES WITH DV/DT CAPABILITY AND METHODS OF MAKING...

TRANSISTOR STRUCTURES HAVING A DEEP RECESSED P+ JUNCTION AND METHOD...

POWER SCHOTTKY DIODES HAVING CLOSELY-SPACED DEEP BLOCKING JUNCTIONS...

POWER SEMICONDUCTOR DEVICES HAVING GATE TRENCHES AND BURIED EDGE TE...

TRANSISTOR STRUCTURES HAVING REDUCED ELECTRICAL FIELD AT THE GATE O...

FLOATING BOND PAD FOR POWER SEMICONDUCTOR DEVICES

TRANSISTOR STRUCTURES HAVING A DEEP RECESSED P+ JUNCTION AND METHOD...

TRANSISTOR STRUCTURES HAVING REDUCED ELECTRICAL FIELD AT THE GATE O...

SEMICONDUCTOR DEVICES INCLUDING EPITAXIAL LAYERS AND RELATED METHODS

Semiconductor Devices Including Electrodes with Integrated Resistan...

Methods of Forming Semiconductor Devices Including Epitaxial Layers...

METHODS OF FORMING SIC MOSFETS WITH HIGH INVERSION LAYER MOBILITY

Methods of forming SIC MOSFETs with high inversion layer mobility

High power silicon carbide (SiC) PiN diodes having low forward volt...