Brian D. Pratt

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Process for high voltage superjunction termination
- Patent number 7,772,086
- Issue date Aug 10, 2010
- Third Dimension (3D) Semiconductor, Inc.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for high voltage superjunction termination
- Patent number 7,759,204
- Issue date Jul 20, 2010
- Third Dimension Semiconductor, Inc.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction barrier schottky with low forward drop and improved revers...
- Patent number 7,397,102
- Issue date Jul 8, 2008
- Taurus Micropower, Inc.
- Fuw-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a superjunction device with wide mesas
- Patent number 7,364,994
- Issue date Apr 29, 2008
- Third Dimension (3D) Semiconductor, Inc.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for high voltage superjunction termination
- Patent number 7,354,818
- Issue date Apr 8, 2008
- Third Dimension (3D) Semiconductor, Inc.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a superjunction device with wide mesas
- Patent number 7,052,982
- Issue date May 30, 2006
- Third Dimension (3D) Semiconductor, Inc.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming narrow trenches in semiconductor substrates
- Patent number 6,977,203
- Issue date Dec 20, 2005
- General Semiconductor, Inc.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming trench MOSFET device with low parasitic resistance
- Patent number 6,645,815
- Issue date Nov 11, 2003
- General Semiconductor, Inc.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PROCESS FOR HIGH VOLTAGE SUPERJUNCTION TERMINATION
- Publication number 20080290442
- Publication date Nov 27, 2008
- THIRD DIMENSION (3D) SEMICONDUCTOR, INC.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR HIGH VOLTAGE SUPERJUNCTION TERMINATION
- Publication number 20080283956
- Publication date Nov 20, 2008
- THIRD DIMENSION (3D) SEMICONDUCTOR, INC.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR HIGH VOLTAGE SUPERJUNCTION TERMINATION
- Publication number 20080164521
- Publication date Jul 10, 2008
- THIRD DIMENSION (3D) SEMICONDUCTOR, INC.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR HIGH VOLTAGE SUPERJUNCTION TERMINATION
- Publication number 20080166855
- Publication date Jul 10, 2008
- THIRD DIMENSION (3D) SEMICONDUCTOR, INC.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate contact and runners for high density trench MOSFET
- Publication number 20060273390
- Publication date Dec 7, 2006
- M-MOS Sdn. Bhd.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Junction barrier schottky with low forward drop and improved revers...
- Publication number 20060237813
- Publication date Oct 26, 2006
- Taurus Micropower, Inc.
- Fuw-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for high voltage superjunction termination
- Publication number 20060231915
- Publication date Oct 19, 2006
- Third Dimension (3D) Semiconductor, Inc.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Manufacturing a Superjunction Device With Wide Mesas
- Publication number 20060205174
- Publication date Sep 14, 2006
- THIRD DIMENSION (3D) SEMICONDUCTOR, INC.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for manufacturing a superjunction device with wide mesas
- Publication number 20050181564
- Publication date Aug 18, 2005
- Third Dimension (3D) Semiconductor, Inc.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming trench MOSFET device with low parasitic resistance
- Publication number 20030096480
- Publication date May 22, 2003
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming narrow trenches in semiconductor substrates
- Publication number 20030096479
- Publication date May 22, 2003
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS

Brian D. Pratt

Person

Patents Grantslast 30 patents

Process for high voltage superjunction termination

Process for high voltage superjunction termination

Junction barrier schottky with low forward drop and improved revers...

Method for manufacturing a superjunction device with wide mesas

Process for high voltage superjunction termination

Method for manufacturing a superjunction device with wide mesas

Method of forming narrow trenches in semiconductor substrates

Method for forming trench MOSFET device with low parasitic resistance

Patents Applicationslast 30 patents

PROCESS FOR HIGH VOLTAGE SUPERJUNCTION TERMINATION

PROCESS FOR HIGH VOLTAGE SUPERJUNCTION TERMINATION

PROCESS FOR HIGH VOLTAGE SUPERJUNCTION TERMINATION

PROCESS FOR HIGH VOLTAGE SUPERJUNCTION TERMINATION

Gate contact and runners for high density trench MOSFET

Junction barrier schottky with low forward drop and improved revers...

Process for high voltage superjunction termination

Method for Manufacturing a Superjunction Device With Wide Mesas

Method for manufacturing a superjunction device with wide mesas

Method for forming trench MOSFET device with low parasitic resistance

Method of forming narrow trenches in semiconductor substrates