Brian D. Schultz

Person

Lexington, MA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Strain compensated rare earth group III-nitride heterostructures
- Patent number 11,942,919
- Issue date Mar 26, 2024
- Raytheon Company
- John A. Logan
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor structure having both enhancement mode group III-N hi...
- Patent number 11,594,627
- Issue date Feb 28, 2023
- Raytheon Company
- Kiuchul Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride high electron mobility transistors (HEMTs) having r...
- Patent number 11,545,566
- Issue date Jan 3, 2023
- Raytheon Company
- Abbas Torabi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Depletion mode high electron mobility field effect transistor (HEMT...
- Patent number 11,362,190
- Issue date Jun 14, 2022
- Raytheon Company
- Kiuchul Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor material growth of a high resistivity nitride buffer...
- Patent number 11,127,596
- Issue date Sep 21, 2021
- Raytheon Company
- Kiuchul Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having both enhancement mode group III-N hi...
- Patent number 11,101,378
- Issue date Aug 24, 2021
- Raytheon Company
- Kiuchul Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-nitride structure having successively reduced crystallogr...
- Patent number 10,622,447
- Issue date Apr 14, 2020
- Raytheon Company
- Brian D. Schultz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III—nitride double-heterojunction field effect transistor
- Patent number 10,276,705
- Issue date Apr 30, 2019
- Raytheon Company
- Brian D. Schultz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III—nitride double-heterojunction field effect transistor
- Patent number 9,960,262
- Issue date May 1, 2018
- Raytheon Company
- Brian D. Schultz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped barrier layers in epitaxial group III nitrides
- Patent number 9,419,125
- Issue date Aug 16, 2016
- Raytheon Company
- Brian D. Schultz
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
RARE-EARTH III-NITRIDE N-POLAR HEMT
- Publication number 20220262937
- Publication date Aug 18, 2022
- Raytheon Company
- John Andrew Logan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAIN COMPENSATED RARE EARTH GROUP III-NITRIDE HETEROSTRUCTURES
- Publication number 20220224306
- Publication date Jul 14, 2022
- Raytheon Company
- John A. Logan
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
DEPLETION MODE HIGH ELECTRON MOBILITY FIELD EFFECT TRANSISTOR (HEMT...
- Publication number 20210367055
- Publication date Nov 25, 2021
- Raytheon Company
- Kiuchul Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING BOTH ENHANCEMENT MODE GROUP III-N HI...
- Publication number 20210351288
- Publication date Nov 11, 2021
- Raytheon Company
- Kiuchul Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium Nitride High Electron Mobility Transistors (HEMTs) Having R...
- Publication number 20210202729
- Publication date Jul 1, 2021
- Raytheon Company
- Abbas Torabi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MATERIAL GROWTH OF A HIGH RESISTIVITY NITRIDE BUFFER...
- Publication number 20210050216
- Publication date Feb 18, 2021
- Raytheon Company
- Kiuchul Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING BOTH ENHANCEMENT MODE GROUP III-N HI...
- Publication number 20200328296
- Publication date Oct 15, 2020
- Raytheon Company
- Kiuchul Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III - NITRIDE STRUCTURE HAVING SUCCESSIVELY REDUCED CRYSTALLO...
- Publication number 20180286954
- Publication date Oct 4, 2018
- Raytheon Company
- Brian D. Schultz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III - NITRIDE DOUBLE-HETEROJUNCTION FIELD EFFECT TRANSISTOR
- Publication number 20180204940
- Publication date Jul 19, 2018
- Raytheon Company
- Brian D. Schultz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III - NITRIDE DOUBLE-HETEROJUNCTION FIELD EFFECT TRANSISTOR
- Publication number 20170250273
- Publication date Aug 31, 2017
- Raytheon Company
- Brian D. Schultz
- H01 - BASIC ELECTRIC ELEMENTS

Brian D. Schultz

Person

Patents Grantslast 30 patents

Strain compensated rare earth group III-nitride heterostructures

Semiconductor structure having both enhancement mode group III-N hi...

Gallium nitride high electron mobility transistors (HEMTs) having r...

Depletion mode high electron mobility field effect transistor (HEMT...

Semiconductor material growth of a high resistivity nitride buffer...

Semiconductor structure having both enhancement mode group III-N hi...

Group III-nitride structure having successively reduced crystallogr...

Group III—nitride double-heterojunction field effect transistor

Group III—nitride double-heterojunction field effect transistor

Doped barrier layers in epitaxial group III nitrides

Patents Applicationslast 30 patents

RARE-EARTH III-NITRIDE N-POLAR HEMT

STRAIN COMPENSATED RARE EARTH GROUP III-NITRIDE HETEROSTRUCTURES

DEPLETION MODE HIGH ELECTRON MOBILITY FIELD EFFECT TRANSISTOR (HEMT...

SEMICONDUCTOR STRUCTURE HAVING BOTH ENHANCEMENT MODE GROUP III-N HI...

Gallium Nitride High Electron Mobility Transistors (HEMTs) Having R...

SEMICONDUCTOR MATERIAL GROWTH OF A HIGH RESISTIVITY NITRIDE BUFFER...

SEMICONDUCTOR STRUCTURE HAVING BOTH ENHANCEMENT MODE GROUP III-N HI...

GROUP III - NITRIDE STRUCTURE HAVING SUCCESSIVELY REDUCED CRYSTALLO...

GROUP III - NITRIDE DOUBLE-HETEROJUNCTION FIELD EFFECT TRANSISTOR

GROUP III - NITRIDE DOUBLE-HETEROJUNCTION FIELD EFFECT TRANSISTOR