Brian Doyle

Person

Portland, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Monolithic memory stack
- Patent number 12,058,847
- Issue date Aug 6, 2024
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double-gated ferroelectric field-effect transistor
- Patent number 11,895,846
- Issue date Feb 6, 2024
- Intel Corporation
- Abhishek A. Sharma
- G11 - INFORMATION STORAGE
Information Patent Grant
Antiferroelectric gate dielectric transistors and their methods of...
- Patent number 11,764,282
- Issue date Sep 19, 2023
- Intel Corporation
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film tunnel field effect transistors having relatively increas...
- Patent number 11,735,595
- Issue date Aug 22, 2023
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin-film-transistor based complementary metal-oxide-semiconductor...
- Patent number 11,659,722
- Issue date May 23, 2023
- Intel Corporation
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric field effect transistors (FeFETs) having band-enginee...
- Patent number 11,640,995
- Issue date May 2, 2023
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
1S-1T ferroelectric memory
- Patent number 11,640,839
- Issue date May 2, 2023
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC including back-end-of-line (BEOL) transistors with crystalline c...
- Patent number 11,616,057
- Issue date Mar 28, 2023
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double selector element for low voltage bipolar memory devices
- Patent number 11,605,671
- Issue date Mar 14, 2023
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selector element with ballast for low voltage bipolar memory devices
- Patent number 11,522,011
- Issue date Dec 6, 2022
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric gate oxide based tunnel feFET memory
- Patent number 11,488,978
- Issue date Nov 1, 2022
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Perpendicular spin transfer torque magnetic mechanism
- Patent number 11,437,567
- Issue date Sep 6, 2022
- Intel Corporation
- Justin Brockman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RRAM memory cell and process to increase RRAM material area in an R...
- Patent number 11,417,705
- Issue date Aug 16, 2022
- Intel Corporation
- Brian Doyle
- G11 - INFORMATION STORAGE
Information Patent Grant
Selector devices with integrated barrier materials
- Patent number 11,404,639
- Issue date Aug 2, 2022
- Intel Corporation
- Elijah V. Karpov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Perpendicular spin transfer torque memory (pSTTM) devices with enha...
- Patent number 11,404,630
- Issue date Aug 2, 2022
- Intel Corporation
- Md Tofizur Rahman
- G11 - INFORMATION STORAGE
Information Patent Grant
Thin film based 1T-1R cell with resistive random access memory belo...
- Patent number 11,393,526
- Issue date Jul 19, 2022
- Intel Corporation
- Ravi Pillarisetty
- G11 - INFORMATION STORAGE
Information Patent Grant
Independently scaling selector and memory in memory cell
- Patent number 11,393,874
- Issue date Jul 19, 2022
- Intel Corporation
- Brian S. Doyle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-level magnetic tunnel junction (MTJ) devices including mobile...
- Patent number 11,386,951
- Issue date Jul 12, 2022
- Intel Corporation
- Kevin O'Brien
- G11 - INFORMATION STORAGE
Information Patent Grant
Selector devices
- Patent number 11,374,056
- Issue date Jun 28, 2022
- Intel Corporation
- Elijah V. Karpov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Word line with air-gap for non-volatile memories
- Patent number 11,362,140
- Issue date Jun 14, 2022
- Intel Corporation
- Prashant Majhi
- G11 - INFORMATION STORAGE
Information Patent Grant
Strained thin film transistors
- Patent number 11,342,457
- Issue date May 24, 2022
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film tunnel field effect transistors having relatively increas...
- Patent number 11,335,705
- Issue date May 17, 2022
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Perpendicular STTM multi-layer insert free layer
- Patent number 11,295,884
- Issue date Apr 5, 2022
- Intel Corporation
- Kaan Oguz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double-gated ferroelectric field-effect transistor
- Patent number 11,289,509
- Issue date Mar 29, 2022
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
1S-1T ferroelectric memory
- Patent number 11,250,899
- Issue date Feb 15, 2022
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of high density cross-point memory and CMOS logic for h...
- Patent number 11,233,040
- Issue date Jan 25, 2022
- Intel Corporation
- Elijah V. Karpov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double selector element for low voltage bipolar memory devices
- Patent number 11,233,090
- Issue date Jan 25, 2022
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backend electrostatic discharge diode apparatus and method of fabri...
- Patent number 11,222,885
- Issue date Jan 11, 2022
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance field-effect transistors and methods of manufacturin...
- Patent number 11,211,489
- Issue date Dec 28, 2021
- Intel Corporation
- Brian Doyle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric gate dielectrics in integrated circuits
- Patent number 11,195,932
- Issue date Dec 7, 2021
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SELF-ALIGNED PATTERNING OF PLATE LINES IN THREE-DIMENSIONAL FERROEL...
- Publication number 20240114693
- Publication date Apr 4, 2024
- Intel Corporation
- Christopher M. Neumann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE FERROELECTRIC DEPLOYMENT FOR SINGLE-TRANSISTOR, MULTIPLE-...
- Publication number 20240112714
- Publication date Apr 4, 2024
- Intel Corporation
- Nazila Haratipour
- G11 - INFORMATION STORAGE
Information Patent Application
HIGH ENDURANCE SUPER-LATTICE ANTI-FERROELECTRIC CAPACITORS
- Publication number 20240114695
- Publication date Apr 4, 2024
- Intel Corporation
- Sou-Chi Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMPROVED REPLACEMENT ELECTRODE PROCESS FOR 3D FERROELECTRIC MEMORY
- Publication number 20240114696
- Publication date Apr 4, 2024
- Intel Corporation
- Christopher Neumann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC CAPACITOR WITHIN BACKSIDE INTERCONNECT
- Publication number 20240114694
- Publication date Apr 4, 2024
- Intel Corporation
- Sourav Dutta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH FERROELECTRIC GATES
- Publication number 20230223475
- Publication date Jul 13, 2023
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES WITH FINFETS OVER GATE-ALL-AROUND TRANSI...
- Publication number 20230086977
- Publication date Mar 23, 2023
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT ASSEMBLIES WITH STACKED COMPUTE LOGIC AND MEMORY...
- Publication number 20230022167
- Publication date Jan 26, 2023
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELLS WITH NON-PLANAR FERROELECTRIC OR ANTIFERROELECTRIC MAT...
- Publication number 20230008261
- Publication date Jan 12, 2023
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTOR DEVICES
- Publication number 20220262860
- Publication date Aug 18, 2022
- Intel Corporation
- Elijah V. Karpov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIN FILM TUNNEL FIELD EFFECT TRANSISTORS HAVING RELATIVELY INCREAS...
- Publication number 20220246646
- Publication date Aug 4, 2022
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITIONAL ENGINEERING OF SCHOTTKY DIODE
- Publication number 20220199839
- Publication date Jun 23, 2022
- Intel Corporation
- Arnab SEN GUPTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL METHOD TO FORM SINGLE CRYSTAL MOSFET AND FEFET
- Publication number 20220199801
- Publication date Jun 23, 2022
- Intel Corporation
- Prashant MAJHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL ESD PROTECTION DECOUPLED FROM DIFFUSION
- Publication number 20220199609
- Publication date Jun 23, 2022
- Intel Corporation
- Urusa ALAAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE-GATED FERROELECTRIC FIELD-EFFECT TRANSISTOR
- Publication number 20220181335
- Publication date Jun 9, 2022
- Intel Corporation
- Abhishek A. SHARMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
1S-1T FERROELECTRIC MEMORY
- Publication number 20220130443
- Publication date Apr 28, 2022
- Intel Corporation
- Abhishek A. SHARMA
- G11 - INFORMATION STORAGE
Information Patent Application
BACKEND ELECTROSTATIC DISCHARGE DIODE APPARATUS AND METHOD OF FABRI...
- Publication number 20220130820
- Publication date Apr 28, 2022
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE SELECTOR ELEMENT FOR LOW VOLTAGE BIPOLAR MEMORY DEVICES
- Publication number 20220109025
- Publication date Apr 7, 2022
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANTIFERROELECTRIC GATE DIELECTRIC TRANSISTORS AND THEIR METHODS OF...
- Publication number 20210399113
- Publication date Dec 23, 2021
- Intel Corporation
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHIC MEMORY STACK
- Publication number 20210375873
- Publication date Dec 2, 2021
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERPENDICULAR STTM MULTI-LAYER INSERT FREE LAYER
- Publication number 20210296040
- Publication date Sep 23, 2021
- Intel Corporation
- KAAN OGUZ
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR FABRICATING TRANSISTOR WITH THINNED CHANNEL
- Publication number 20210135007
- Publication date May 6, 2021
- Intel Corporation
- Justin K. Brask
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL THIN FILM TRANSISTOR STRUCTURES WITH LOCALIZED GATE DIELEC...
- Publication number 20200388711
- Publication date Dec 10, 2020
- Intel Corporation
- Brian Doyle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN TRANSFER TORQUE MEMORY (STTM) DEVICES WITH DECREASED CRITICAL...
- Publication number 20200357449
- Publication date Nov 12, 2020
- Intel Corporation
- Brian S. DOYLE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF HIGH DENSITY CROSS-POINT MEMORY AND CMOS LOGIC FOR H...
- Publication number 20200357782
- Publication date Nov 12, 2020
- Intel Corporation
- Elijah V. KARPOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INDEPENDENTLY SCALING SELECTOR AND MEMORY IN MEMORY CELL
- Publication number 20200321395
- Publication date Oct 8, 2020
- Intel Corporation
- Brian S. Doyle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IC INCLUDING BACK-END-OF-LINE (BEOL) TRANSISTORS WITH CRYSTALLINE C...
- Publication number 20200312839
- Publication date Oct 1, 2020
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE STATIC RANDOM ACCESS MEMORY (SRAM) DEVICES
- Publication number 20200303381
- Publication date Sep 24, 2020
- Intel Corporation
- Elijah KARPOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANTIFERROELECTRIC GATE DIELECTRIC TRANSISTORS AND THEIR METHODS OF...
- Publication number 20200273962
- Publication date Aug 27, 2020
- Intel Corporation
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DYNAMIC RANDOM ACCESS MEMORY INCLUDING THRESHOLD SWITCH
- Publication number 20200251160
- Publication date Aug 6, 2020
- Intel Corporation
- Abhishek A. Sharma
- G11 - INFORMATION STORAGE

Brian Doyle

Person

Patents Grantslast 30 patents

Monolithic memory stack

Double-gated ferroelectric field-effect transistor

Antiferroelectric gate dielectric transistors and their methods of...

Thin film tunnel field effect transistors having relatively increas...

Thin-film-transistor based complementary metal-oxide-semiconductor...

Ferroelectric field effect transistors (FeFETs) having band-enginee...

1S-1T ferroelectric memory

IC including back-end-of-line (BEOL) transistors with crystalline c...

Double selector element for low voltage bipolar memory devices

Selector element with ballast for low voltage bipolar memory devices

Ferroelectric gate oxide based tunnel feFET memory

Perpendicular spin transfer torque magnetic mechanism

RRAM memory cell and process to increase RRAM material area in an R...

Selector devices with integrated barrier materials

Perpendicular spin transfer torque memory (pSTTM) devices with enha...

Thin film based 1T-1R cell with resistive random access memory belo...

Independently scaling selector and memory in memory cell

Multi-level magnetic tunnel junction (MTJ) devices including mobile...

Selector devices

Word line with air-gap for non-volatile memories

Strained thin film transistors

Thin film tunnel field effect transistors having relatively increas...

Perpendicular STTM multi-layer insert free layer

Double-gated ferroelectric field-effect transistor

1S-1T ferroelectric memory

Integration of high density cross-point memory and CMOS logic for h...

Double selector element for low voltage bipolar memory devices

Backend electrostatic discharge diode apparatus and method of fabri...

Low resistance field-effect transistors and methods of manufacturin...

Ferroelectric gate dielectrics in integrated circuits

Patents Applicationslast 30 patents

SELF-ALIGNED PATTERNING OF PLATE LINES IN THREE-DIMENSIONAL FERROEL...

SELECTIVE FERROELECTRIC DEPLOYMENT FOR SINGLE-TRANSISTOR, MULTIPLE-...

HIGH ENDURANCE SUPER-LATTICE ANTI-FERROELECTRIC CAPACITORS

IMPROVED REPLACEMENT ELECTRODE PROCESS FOR 3D FERROELECTRIC MEMORY

FERROELECTRIC CAPACITOR WITHIN BACKSIDE INTERCONNECT

TRANSISTORS WITH FERROELECTRIC GATES

INTEGRATED CIRCUIT DEVICES WITH FINFETS OVER GATE-ALL-AROUND TRANSI...

INTEGRATED CIRCUIT ASSEMBLIES WITH STACKED COMPUTE LOGIC AND MEMORY...

MEMORY CELLS WITH NON-PLANAR FERROELECTRIC OR ANTIFERROELECTRIC MAT...

SELECTOR DEVICES

THIN FILM TUNNEL FIELD EFFECT TRANSISTORS HAVING RELATIVELY INCREAS...

COMPOSITIONAL ENGINEERING OF SCHOTTKY DIODE

NOVEL METHOD TO FORM SINGLE CRYSTAL MOSFET AND FEFET

NOVEL ESD PROTECTION DECOUPLED FROM DIFFUSION

DOUBLE-GATED FERROELECTRIC FIELD-EFFECT TRANSISTOR

1S-1T FERROELECTRIC MEMORY

BACKEND ELECTROSTATIC DISCHARGE DIODE APPARATUS AND METHOD OF FABRI...

DOUBLE SELECTOR ELEMENT FOR LOW VOLTAGE BIPOLAR MEMORY DEVICES

ANTIFERROELECTRIC GATE DIELECTRIC TRANSISTORS AND THEIR METHODS OF...

MONOLITHIC MEMORY STACK

PERPENDICULAR STTM MULTI-LAYER INSERT FREE LAYER

METHOD FOR FABRICATING TRANSISTOR WITH THINNED CHANNEL

VERTICAL THIN FILM TRANSISTOR STRUCTURES WITH LOCALIZED GATE DIELEC...

SPIN TRANSFER TORQUE MEMORY (STTM) DEVICES WITH DECREASED CRITICAL...

INTEGRATION OF HIGH DENSITY CROSS-POINT MEMORY AND CMOS LOGIC FOR H...

INDEPENDENTLY SCALING SELECTOR AND MEMORY IN MEMORY CELL

IC INCLUDING BACK-END-OF-LINE (BEOL) TRANSISTORS WITH CRYSTALLINE C...

NONVOLATILE STATIC RANDOM ACCESS MEMORY (SRAM) DEVICES

ANTIFERROELECTRIC GATE DIELECTRIC TRANSISTORS AND THEIR METHODS OF...

DYNAMIC RANDOM ACCESS MEMORY INCLUDING THRESHOLD SWITCH