Brian Maertz

Person

Portland, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Perpendicular spin transfer torque memory (pSTTM) devices with enha...
- Patent number 11,404,630
- Issue date Aug 2, 2022
- Intel Corporation
- Md Tofizur Rahman
- G11 - INFORMATION STORAGE
Information Patent Grant
High stability free layer for perpendicular spin torque transfer me...
- Patent number 11,031,545
- Issue date Jun 8, 2021
- Intel Corporation
- Kaan Oguz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Approaches for strain engineering of perpendicular magnetic tunnel...
- Patent number 10,868,233
- Issue date Dec 15, 2020
- Intel Corporation
- Daniel G. Ouellette
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device, system and method for improved magnetic anisotropy of a mag...
- Patent number 10,804,460
- Issue date Oct 13, 2020
- Intel Corporation
- MD Tofizur Rahman
- G11 - INFORMATION STORAGE
Information Patent Grant
Perpendicular spin transfer torque memory (PSTTM) devices with enha...
- Patent number 10,770,651
- Issue date Sep 8, 2020
- Intel Corporation
- MD Tofizur Rahman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained perpendicular magnetic tunnel junction devices
- Patent number 10,636,960
- Issue date Apr 28, 2020
- Intel Corporation
- Prashanth P. Madras
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Texture breaking layer to decouple bottom electrode from PMTJ device
- Patent number 10,559,744
- Issue date Feb 11, 2020
- Intel Corporation
- Brian Maertz
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
VARIABLE CAPACITOR
- Publication number 20240355553
- Publication date Oct 24, 2024
- Atomica Corp.
- Soheil Seena Partokia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OVERCURRENT PROTECTION
- Publication number 20240249901
- Publication date Jul 25, 2024
- Atomica Corp.
- Soheil Seena Partokia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERPENDICULAR SPIN TRANSFER TORQUE MEMORY (PSTTM) DEVICES WITH ENHA...
- Publication number 20190378972
- Publication date Dec 12, 2019
- Intel Corporation
- MD Tofizur RAHMAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERPENDICULAR SPIN TRANSFER TORQUE MEMORY (PSTTM) DEVICES WITH ENHA...
- Publication number 20190334079
- Publication date Oct 31, 2019
- Intel Corporation
- MD Tofizur RAHMAN
- G11 - INFORMATION STORAGE
Information Patent Application
HIGH STABILITY FREE LAYER FOR PERPENDICULAR SPIN TORQUE TRANSFER ME...
- Publication number 20190221734
- Publication date Jul 18, 2019
- Intel Corporation
- Kaan Oguz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE, SYSTEM AND METHOD FOR IMPROVED MAGNETIC ANISOTROPY OF A MAG...
- Publication number 20190140166
- Publication date May 9, 2019
- Intel Corporation
- MD Tofizur RAHMAN
- G11 - INFORMATION STORAGE
Information Patent Application
TEXTURE BREAKING LAYER TO DECOUPLE BOTTOM ELECTRODE FROM PMTJ DEVICE
- Publication number 20190036010
- Publication date Jan 31, 2019
- Intel Corporation
- Brian MAERTZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPROACHES FOR STRAIN ENGINEERING OF PERPENDICULAR MAGNETIC TUNNEL...
- Publication number 20190027679
- Publication date Jan 24, 2019
- Intel Corporation
- Daniel G. OUELLETTE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED PERPENDICULAR MAGNETIC TUNNEL JUNCTION DEVICES
- Publication number 20180287050
- Publication date Oct 4, 2018
- Intel Corporation
- Prashanth P. Madras
- H01 - BASIC ELECTRIC ELEMENTS

Brian Maertz

Person

Patents Grantslast 30 patents

Perpendicular spin transfer torque memory (pSTTM) devices with enha...

High stability free layer for perpendicular spin torque transfer me...

Approaches for strain engineering of perpendicular magnetic tunnel...

Device, system and method for improved magnetic anisotropy of a mag...

Perpendicular spin transfer torque memory (PSTTM) devices with enha...

Strained perpendicular magnetic tunnel junction devices

Texture breaking layer to decouple bottom electrode from PMTJ device

Patents Applicationslast 30 patents

VARIABLE CAPACITOR

OVERCURRENT PROTECTION

PERPENDICULAR SPIN TRANSFER TORQUE MEMORY (PSTTM) DEVICES WITH ENHA...

PERPENDICULAR SPIN TRANSFER TORQUE MEMORY (PSTTM) DEVICES WITH ENHA...

HIGH STABILITY FREE LAYER FOR PERPENDICULAR SPIN TORQUE TRANSFER ME...

DEVICE, SYSTEM AND METHOD FOR IMPROVED MAGNETIC ANISOTROPY OF A MAG...

TEXTURE BREAKING LAYER TO DECOUPLE BOTTOM ELECTRODE FROM PMTJ DEVICE

APPROACHES FOR STRAIN ENGINEERING OF PERPENDICULAR MAGNETIC TUNNEL...

STRAINED PERPENDICULAR MAGNETIC TUNNEL JUNCTION DEVICES