Brian S. Lee

Person

New York, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Plasma doping for DRAM with deep trenches and hemispherical grains
- Patent number 6,475,859
- Issue date Nov 5, 2002
- Infineon Technologies AG
- Helmut Horst Tews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a vertically oriented device in an integrated cir...
- Patent number 6,426,253
- Issue date Jul 30, 2002
- Infineon Technologies A G
- Helmut Horst Tews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Control of oxide thickness in vertical transistor structures
- Patent number 6,372,567
- Issue date Apr 16, 2002
- Infineon Technologies AG
- Helmut Horst Tews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduction of orientation dependent oxidation for vertical sidewalls...
- Patent number 6,362,040
- Issue date Mar 26, 2002
- Infineon Technologies AG
- Helmut Horst Tews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabricating a uniform gate oxide of a vertical transistor
- Patent number 6,348,388
- Issue date Feb 19, 2002
- International Business Machines Corporation
- Johnathan E. Faltermeier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit vertical trench device and method of forming the...
- Patent number 6,335,247
- Issue date Jan 1, 2002
- Infineon Technologies AG
- Helmut Horst Tews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of reducing RIE lag for deep trench silicon etching
- Patent number 6,284,666
- Issue date Sep 4, 2001
- International Business Machines Corporation
- Munir D. Naeem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to prevent oxygen out-diffusion from BSTO containing micro-e...
- Patent number 6,214,661
- Issue date Apr 10, 2001
- Infineon Technologoies North America Corp.
- Heon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Differential trench open process
- Patent number 6,207,573
- Issue date Mar 27, 2001
- Infineon Technologies North America Corp.
- Brian S. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a hemispherical grained capacitor
- Patent number 6,159,874
- Issue date Dec 12, 2000
- Infineon Technologies North America Corp.
- Helmut Horst Tews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabricating a uniform gate oxide of a vertical transistor
- Patent number 6,150,670
- Issue date Nov 21, 2000
- International Business Machines Corporation
- Johnathan E. Faltermeier
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Ultra-fine alignment system and method using acoustic-AFM interaction
- Publication number 20030003676
- Publication date Jan 2, 2003
- Brian Lee
- B82 - NANO-TECHNOLOGY

Brian S. Lee

Person

Patents Grantslast 30 patents

Plasma doping for DRAM with deep trenches and hemispherical grains

Method of forming a vertically oriented device in an integrated cir...

Control of oxide thickness in vertical transistor structures

Reduction of orientation dependent oxidation for vertical sidewalls...

Process for fabricating a uniform gate oxide of a vertical transistor

Integrated circuit vertical trench device and method of forming the...

Method of reducing RIE lag for deep trench silicon etching

Method to prevent oxygen out-diffusion from BSTO containing micro-e...

Differential trench open process

Method of forming a hemispherical grained capacitor

Process for fabricating a uniform gate oxide of a vertical transistor

Patents Applicationslast 30 patents

Ultra-fine alignment system and method using acoustic-AFM interaction