Brian W. Messenger

Person

Newburgh, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Voltage contrast inspection of deep trench isolation
- Patent number 9,293,382
- Issue date Mar 22, 2016
- GLOBALFOUNDRIES Inc.
- Norbert Arnold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Voltage contrast inspection of deep trench isolation
- Patent number 8,927,989
- Issue date Jan 6, 2015
- International Business Machines Corporation
- Norbert Arnold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral epitaxial grown SOI in deep trench structures and methods o...
- Patent number 8,836,003
- Issue date Sep 16, 2014
- International Business Machines Corporation
- Joseph Ervin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polysilicon/metal contact resistance in deep trench
- Patent number 8,723,243
- Issue date May 13, 2014
- International Business Machines Corporation
- Brian W. Messenger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral epitaxial grown SOI in deep trench structures and methods o...
- Patent number 8,692,307
- Issue date Apr 8, 2014
- International Business Machines Corporation
- Joseph Ervin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polysilicon/metal contact resistance in deep trench
- Patent number 8,642,423
- Issue date Feb 4, 2014
- International Business Machines Corporation
- Brian W. Messenger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for programming an electronically programmable...
- Patent number 8,445,362
- Issue date May 21, 2013
- International Business Machines Corporation
- Dan Moy
- G11 - INFORMATION STORAGE
Information Patent Grant
Lateral epitaxial grown SOI in deep trench structures and methods o...
- Patent number 8,232,163
- Issue date Jul 31, 2012
- International Business Machines Corporation
- Joseph Ervin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Chemical oxide removal of plasma damaged SiCOH low k dielectrics
- Patent number 8,106,485
- Issue date Jan 31, 2012
- International Business Machines Corporation
- William G. America
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure of an apparatus for programming an electronically program...
- Patent number 7,757,200
- Issue date Jul 13, 2010
- International Business Machines Corporation
- Dan Moy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturable recessed strained RSD structure and process for adva...
- Patent number 7,446,005
- Issue date Nov 4, 2008
- International Business Machines Corporation
- Brian Messenger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Chemical oxide removal of plasma damaged SiCOH low k dielectrics
- Patent number 7,368,393
- Issue date May 6, 2008
- International Business Machines Corporation
- William G. America
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a trench memory cell
- Patent number 7,153,738
- Issue date Dec 26, 2006
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a strained raised source/drain
- Patent number 7,115,955
- Issue date Oct 3, 2006
- International Business Machines Corporation
- Brian Messenger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for deep trench etching through a buried insulator layer
- Patent number 6,995,094
- Issue date Feb 7, 2006
- International Business Machines Corporation
- Herbert L. Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of trench sidewall enhancement
- Patent number 6,706,586
- Issue date Mar 16, 2004
- International Business Machines Corporation
- Christophe N. Collins
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
VOLTAGE CONTRAST INSPECTION OF DEEP TRENCH ISOLATION
- Publication number 20150041809
- Publication date Feb 12, 2015
- International Business Machines Corporation
- Norbert Arnold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VOLTAGE CONTRAST INSPECTION OF DEEP TRENCH ISOLATION
- Publication number 20140145191
- Publication date May 29, 2014
- International Business Machines Corporation
- Norbert Arnold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL EPITAXIAL GROWN SOI IN DEEP TRENCH STRUCTURES AND METHODS O...
- Publication number 20140084418
- Publication date Mar 27, 2014
- International Business Machines Corporation
- Joseph ERVIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLYSILICON/METAL CONTACT RESISTANCE IN DEEP TRENCH
- Publication number 20140054664
- Publication date Feb 27, 2014
- International Business Machines Corporation
- Brian W. Messenger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLYSILICON/METAL CONTACT RESISTANCE IN DEEP TRENCH
- Publication number 20130134491
- Publication date May 30, 2013
- International Business Machines Corporation
- Brian W. Messenger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL EPITAXIAL GROWN SOI IN DEEP TRENCH STRUCTURES AND METHODS O...
- Publication number 20120261797
- Publication date Oct 18, 2012
- International Business Machines Corporation
- JOSEPH ERVIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS AND METHOD FOR PROGRAMMING AN ELECTRONICALLY PROGRAMMABLE...
- Publication number 20120161855
- Publication date Jun 28, 2012
- International Business Machines Corporation
- Dan Moy
- G11 - INFORMATION STORAGE
Information Patent Application
LATERAL EPITAXIAL GROWN SOI IN DEEP TRENCH STRUCTURES AND METHODS O...
- Publication number 20120104547
- Publication date May 3, 2012
- International Business Machines Corporation
- JOSEPH ERVIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE OF AN APPARATUS FOR PROGRAMMING AN ELECTRONICALLY PROGRAM...
- Publication number 20090128225
- Publication date May 21, 2009
- International Business Machines Corporation
- Dan Moy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHEMICAL OXIDE REMOVAL OF PLASMA DAMAGED SICOH LOW K DIELECTRICS
- Publication number 20080224273
- Publication date Sep 18, 2008
- International Business Machines Corporation
- William G. AMERICA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS AND METHOD FOR PROGRAMMING AN ELECTRONICALLY PROGRAMMABLE...
- Publication number 20080089159
- Publication date Apr 17, 2008
- International Business Machines Corporation
- Dan Moy
- G11 - INFORMATION STORAGE
Information Patent Application
CHEMICAL OXIDE REMOVAL OF PLASMA DAMAGED SICOH LOW K DIELECTRICS
- Publication number 20070246442
- Publication date Oct 25, 2007
- International Business Machines Corporation
- William G. America
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH MEMORY CELL AND METHOD FOR MAKING THE SAME
- Publication number 20070077702
- Publication date Apr 5, 2007
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING A TRENCH MEMORY CELL
- Publication number 20060263975
- Publication date Nov 23, 2006
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Manufacturable recessed strained RSD structure and process for adva...
- Publication number 20060205189
- Publication date Sep 14, 2006
- International Business Machines Corporation
- Brian Messenger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURABLE RECESSED STRAINED RSD STRUCTURE AND PROCESS FOR ADVA...
- Publication number 20060022266
- Publication date Feb 2, 2006
- International Business Machines Corporation
- Brian Messenger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DEEP TRENCH ETCHING THROUGH A BURIED INSULATOR LAYER
- Publication number 20050079724
- Publication date Apr 14, 2005
- International Business Machines Corporation
- Herbert L. Ho
- H01 - BASIC ELECTRIC ELEMENTS

Brian W. Messenger

Person

Patents Grantslast 30 patents

Voltage contrast inspection of deep trench isolation

Voltage contrast inspection of deep trench isolation

Lateral epitaxial grown SOI in deep trench structures and methods o...

Polysilicon/metal contact resistance in deep trench

Lateral epitaxial grown SOI in deep trench structures and methods o...

Polysilicon/metal contact resistance in deep trench

Apparatus and method for programming an electronically programmable...

Lateral epitaxial grown SOI in deep trench structures and methods o...

Chemical oxide removal of plasma damaged SiCOH low k dielectrics

Structure of an apparatus for programming an electronically program...

Manufacturable recessed strained RSD structure and process for adva...

Chemical oxide removal of plasma damaged SiCOH low k dielectrics

Method for making a trench memory cell

Semiconductor device having a strained raised source/drain

Method for deep trench etching through a buried insulator layer

Method of trench sidewall enhancement

Patents Applicationslast 30 patents

VOLTAGE CONTRAST INSPECTION OF DEEP TRENCH ISOLATION

VOLTAGE CONTRAST INSPECTION OF DEEP TRENCH ISOLATION

LATERAL EPITAXIAL GROWN SOI IN DEEP TRENCH STRUCTURES AND METHODS O...

POLYSILICON/METAL CONTACT RESISTANCE IN DEEP TRENCH

POLYSILICON/METAL CONTACT RESISTANCE IN DEEP TRENCH

LATERAL EPITAXIAL GROWN SOI IN DEEP TRENCH STRUCTURES AND METHODS O...

APPARATUS AND METHOD FOR PROGRAMMING AN ELECTRONICALLY PROGRAMMABLE...

LATERAL EPITAXIAL GROWN SOI IN DEEP TRENCH STRUCTURES AND METHODS O...

STRUCTURE OF AN APPARATUS FOR PROGRAMMING AN ELECTRONICALLY PROGRAM...

CHEMICAL OXIDE REMOVAL OF PLASMA DAMAGED SICOH LOW K DIELECTRICS

APPARATUS AND METHOD FOR PROGRAMMING AN ELECTRONICALLY PROGRAMMABLE...

CHEMICAL OXIDE REMOVAL OF PLASMA DAMAGED SICOH LOW K DIELECTRICS

TRENCH MEMORY CELL AND METHOD FOR MAKING THE SAME

METHOD FOR MAKING A TRENCH MEMORY CELL

Manufacturable recessed strained RSD structure and process for adva...

MANUFACTURABLE RECESSED STRAINED RSD STRUCTURE AND PROCESS FOR ADVA...

METHOD FOR DEEP TRENCH ETCHING THROUGH A BURIED INSULATOR LAYER