Bruce Faure

Person

Grenoble, FR

People

Patents Grantslast 30 patents

Information Patent Grant
Method of fabricating a composite structure with a stable bonding l...
- Patent number 9,242,444
- Issue date Jan 26, 2016
- SOITEC
- Bruce Faure
- B32 - LAYERED PRODUCTS
Information Patent Grant
Relaxation and transfer of strained material layers
- Patent number 9,041,165
- Issue date May 26, 2015
- Soitec
- Fabrice Letertre
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for making a composite substrate and composite substrate acc...
- Patent number 9,011,598
- Issue date Apr 21, 2015
- Soitec
- Alice Boussagol
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Stiffening layers for the relaxation of strained layers
- Patent number 8,912,081
- Issue date Dec 16, 2014
- Soitec
- Bruce Faure
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterostructures comprising crystalline strain relaxation layers
- Patent number 8,564,019
- Issue date Oct 22, 2013
- Soitec
- Bruce Faure
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optoelectronic substrate and methods of making same
- Patent number 8,541,290
- Issue date Sep 24, 2013
- Soitec
- Fabrice Letertre
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Methods for relaxation and transfer of strained layers and structur...
- Patent number 8,492,244
- Issue date Jul 23, 2013
- Soitec
- Pascal Guenard
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Methods of forming relaxed layers of semiconductor materials, semic...
- Patent number 8,486,771
- Issue date Jul 16, 2013
- Soitec
- Fabrice Letertre
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Processes for fabricating heterostructures
- Patent number 8,481,407
- Issue date Jul 9, 2013
- Soitec
- Bruce Faure
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for making a GaN substrate
- Patent number 8,263,984
- Issue date Sep 11, 2012
- Soitec
- Bruce Faure
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating an epitaxially grown layer
- Patent number 8,216,368
- Issue date Jul 10, 2012
- Soitec
- Bruce Faure
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of fabricating an epitaxially grown layer on a composite str...
- Patent number 8,153,500
- Issue date Apr 10, 2012
- Soitec
- Bruce Faure
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Relaxation and transfer of strained layers
- Patent number 8,105,916
- Issue date Jan 31, 2012
- S.O.I. Tec Silicon on Insulator Technologies
- Bruce Faure
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating an epitaxially grown layer
- Patent number 8,093,138
- Issue date Jan 10, 2012
- S.O.I. Tec Silicon on Insulator Technologies
- Bruce Faure
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods for relaxation and transfer of strained layers and structur...
- Patent number 7,981,767
- Issue date Jul 19, 2011
- S.O.I. Tec Silicon on Insulator Technologies
- Pascal Guenard
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Methods for making substrates and substrates formed therefrom
- Patent number 7,939,428
- Issue date May 10, 2011
- S.O.I. Tec Silicon on Insulator Technologies
- Alice Boussagol
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods for making substrates and substrates formed therefrom
- Patent number 7,839,001
- Issue date Nov 23, 2010
- S.O.I. Tec Silicon on Insulator Technologies
- Alice Boussagol
- C30 - CRYSTAL GROWTH
Information Patent Grant
Passivation of semiconductor structures having strained layers
- Patent number 7,736,935
- Issue date Jun 15, 2010
- S.O.I. Tec Silicon on Insulator Technologies
- Bruce Faure
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of detaching a thin film by melting precipitates
- Patent number 7,670,930
- Issue date Mar 2, 2010
- Commissariat a l'Energie Atomique
- Aurélie Tauzin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating heteroepitaxial microstructures
- Patent number 7,646,038
- Issue date Jan 12, 2010
- S.O.I. Tec Silicon on Insulator Technologies
- Bruce Faure
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for making substrates and substrates formed therefrom
- Patent number 7,615,468
- Issue date Nov 10, 2009
- S.O.I. Tec Silicon on Insulator Technologies
- Alice Boussagol
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating an epitaxially grown layer
- Patent number 7,601,217
- Issue date Oct 13, 2009
- S.O.I. Tec Silicon on Insulator Technologies
- Bruce Faure
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Recycling by mechanical means of a wafer comprising a multilayer st...
- Patent number 7,602,046
- Issue date Oct 13, 2009
- S.O.I. Tec Silicon on Insulator Technologies
- Bruno Ghyselen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optoelectronic substrate and methods of making same
- Patent number 7,537,949
- Issue date May 26, 2009
- S.O.I. Tec Silicon on Insulator Technologies
- Fabrice Letertre
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Method of fabricating an epitaxially grown layer
- Patent number 7,538,010
- Issue date May 26, 2009
- S.O.I. Tec Silicon on Insulator Technologies
- Bruce Faure
- C30 - CRYSTAL GROWTH
Information Patent Grant
Recycling by mechanical means of a wafer comprising a multilayer st...
- Patent number 7,375,008
- Issue date May 20, 2008
- S.O.I. Tec Silicon on Insulator Technologies
- Bruno Ghyselen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating heteroepitaxial microstructures
- Patent number 7,288,430
- Issue date Oct 30, 2007
- S.O.I.Tec Silicon on Insulator Technolgoies
- Bruce Faure
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating an epitaxial substrate
- Patent number 7,261,777
- Issue date Aug 28, 2007
- S.O.I. Tec Silicon on Insulator Technologies
- Bruce Faure
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite structure with high heat dissipation
- Patent number 7,256,473
- Issue date Aug 14, 2007
- S.O.I. Tec Silicon on Insulator Technologies
- Bruce Faure
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating a germanium on insulator wafer
- Patent number 7,229,898
- Issue date Jun 12, 2007
- S.O.I.Tec Silicon on Insulator Technologies S.A.
- Konstantin Bourdelle
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF FABRICATING A COMPOSITE STRUCTURE WITH A STABLE BONDING L...
- Publication number 20140014029
- Publication date Jan 16, 2014
- SOITEC
- Bruce FAURE
- B32 - LAYERED PRODUCTS
Information Patent Application
HETEROSTRUCTURES COMPRISING CRYSTALLINE STRAIN RELAXATION LAYERS
- Publication number 20120098033
- Publication date Apr 26, 2012
- SOITEC
- Bruce Faure
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESSES FOR FABRICATING HETEROSTRUCTURES
- Publication number 20120100691
- Publication date Apr 26, 2012
- SOITEC
- Bruce Faure
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RELAXATION AND TRANSFER OF STRAINED MATERIAL LAYERS
- Publication number 20110291247
- Publication date Dec 1, 2011
- S.O.I TEC SILICON ON INSULATOR TECHNOLOGIES
- Fabrice Letertre
- C30 - CRYSTAL GROWTH
Information Patent Application
OPTOELECTRONIC SUBSTRATE AND METHODS OF MAKING SAME
- Publication number 20110237008
- Publication date Sep 29, 2011
- S.O.I.Tec Silicon on Insulator Technologies
- Fabrice Letertre
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
METHODS FOR RELAXATION AND TRANSFER OF STRAINED LAYERS AND STRUCTUR...
- Publication number 20110180911
- Publication date Jul 28, 2011
- S.O.I.Tec Silicon on Insulator Technologies
- Pascal Guenard
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
STIFFENING LAYERS FOR THE RELAXATION OF STRAINED LAYERS
- Publication number 20110127640
- Publication date Jun 2, 2011
- Bruce Faure
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR MAKING SUBSTRATES AND SUBSTRATES FORMED THEREFROM
- Publication number 20110039368
- Publication date Feb 17, 2011
- Alice Boussagol
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF FABRICATING A COMPOSITE STRUCTURE WITH A STABLE BONDING L...
- Publication number 20100190000
- Publication date Jul 29, 2010
- S. O. I. Tec Silicon on Insulator Technologies
- Bruce Faure
- B32 - LAYERED PRODUCTS
Information Patent Application
METHODS OF FORMING RELAXED LAYERS OF SEMICONDUCTOR MATERIALS, SEMIC...
- Publication number 20100176490
- Publication date Jul 15, 2010
- Fabrice LETERTRE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING EPITAXIALLY GROWN LAYERS ON A COMPOSITE STRUC...
- Publication number 20100178749
- Publication date Jul 15, 2010
- S. O. I. Tec Silicon on Insulator Technologies
- Bruce Faure
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PASSIVATION OF SEMICONDUCTOR STRUCTURES HAVING STRAINED LAYERS
- Publication number 20100035418
- Publication date Feb 11, 2010
- Bruce FAURE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR RELAXATION AND TRANSFER OF STRAINED LAYERS AND STRUCTUR...
- Publication number 20100032793
- Publication date Feb 11, 2010
- Pascal Guenard
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
RELAXATION AND TRANSFER OF STRAINED LAYERS
- Publication number 20100025728
- Publication date Feb 4, 2010
- Bruce Faure
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR MAKING A GaN SUBSTRATE
- Publication number 20100012947
- Publication date Jan 21, 2010
- Bruce Faure
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF RECYCLING AN EPITAXIED DONOR WAFER
- Publication number 20090325362
- Publication date Dec 31, 2009
- Nabil Chhaimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING AN EPITAXIALLY GROWN LAYER
- Publication number 20090321884
- Publication date Dec 31, 2009
- S.O.I.Tec Silicon on Insulator Technologies
- Bruce Faure
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS FOR MAKING SUBSTRATES AND SUBSTRATES FORMED THEREFROM
- Publication number 20090289332
- Publication date Nov 26, 2009
- S.O.I.Tec Silicon on Insulator Technologies
- Alice Boussagol
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF FABRICATING AN EPITAXIALLY GROWN LAYER
- Publication number 20090229743
- Publication date Sep 17, 2009
- S. O. I. Tec Silicon on Insulator Technologies
- Bruce Faure
- C30 - CRYSTAL GROWTH
Information Patent Application
OPTOELECTRONIC SUBSTRATE AND METHODS OF MAKING SAME
- Publication number 20090200569
- Publication date Aug 13, 2009
- S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES S.A.
- Fabrice Letertre
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
METHOD OF DETACHING A THIN FILM BY MELTING PRECIPITATES
- Publication number 20090061594
- Publication date Mar 5, 2009
- Aurelie Tauzin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING HETEROEPITAXIAL MICROSTRUCTURES
- Publication number 20080210975
- Publication date Sep 4, 2008
- S. O. I. Tec Silicon on Insulator Technologies
- Bruce Faure
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS FOR MAKING SUBSTRATES AND SUBSTRATES FORMED THEREFROM
- Publication number 20070287273
- Publication date Dec 13, 2007
- Alice Boussagol
- C30 - CRYSTAL GROWTH
Information Patent Application
Methods for making substrates and substrates formed therefrom
- Publication number 20070141803
- Publication date Jun 21, 2007
- Alice Boussagol
- C30 - CRYSTAL GROWTH
Information Patent Application
COMPOSITE STRUCTURE WITH HIGH HEAT DISSIPATION
- Publication number 20070080372
- Publication date Apr 12, 2007
- S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES S.A.
- Bruce Faure
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for making a composite substrate and composite substrate acc...
- Publication number 20070022940
- Publication date Feb 1, 2007
- Alice Boussagol
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Optoelectronic substrate and methods of making same
- Publication number 20060166390
- Publication date Jul 27, 2006
- Fabrice Letertre
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Method of fabricating an epitaxially grown layer
- Publication number 20060118513
- Publication date Jun 8, 2006
- Bruce Faure
- C30 - CRYSTAL GROWTH
Information Patent Application
Methods for fabricating a germanium on insulator wafer
- Publication number 20060110899
- Publication date May 25, 2006
- Konstantin Bourdelle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Composite structure with high heat dissipation
- Publication number 20060091400
- Publication date May 4, 2006
- Bruce Faure
- H01 - BASIC ELECTRIC ELEMENTS

Bruce Faure

Person

Patents Grantslast 30 patents

Method of fabricating a composite structure with a stable bonding l...

Relaxation and transfer of strained material layers

Method for making a composite substrate and composite substrate acc...

Stiffening layers for the relaxation of strained layers

Heterostructures comprising crystalline strain relaxation layers

Optoelectronic substrate and methods of making same

Methods for relaxation and transfer of strained layers and structur...

Methods of forming relaxed layers of semiconductor materials, semic...

Processes for fabricating heterostructures

Process for making a GaN substrate

Method of fabricating an epitaxially grown layer

Method of fabricating an epitaxially grown layer on a composite str...

Relaxation and transfer of strained layers

Method of fabricating an epitaxially grown layer

Methods for relaxation and transfer of strained layers and structur...

Methods for making substrates and substrates formed therefrom

Methods for making substrates and substrates formed therefrom

Passivation of semiconductor structures having strained layers

Method of detaching a thin film by melting precipitates

Method of fabricating heteroepitaxial microstructures

Methods for making substrates and substrates formed therefrom

Method of fabricating an epitaxially grown layer

Recycling by mechanical means of a wafer comprising a multilayer st...

Optoelectronic substrate and methods of making same

Method of fabricating an epitaxially grown layer

Recycling by mechanical means of a wafer comprising a multilayer st...

Method of fabricating heteroepitaxial microstructures

Method for fabricating an epitaxial substrate

Composite structure with high heat dissipation

Methods for fabricating a germanium on insulator wafer

Patents Applicationslast 30 patents

METHOD OF FABRICATING A COMPOSITE STRUCTURE WITH A STABLE BONDING L...

HETEROSTRUCTURES COMPRISING CRYSTALLINE STRAIN RELAXATION LAYERS

PROCESSES FOR FABRICATING HETEROSTRUCTURES

RELAXATION AND TRANSFER OF STRAINED MATERIAL LAYERS

OPTOELECTRONIC SUBSTRATE AND METHODS OF MAKING SAME

METHODS FOR RELAXATION AND TRANSFER OF STRAINED LAYERS AND STRUCTUR...

STIFFENING LAYERS FOR THE RELAXATION OF STRAINED LAYERS

METHODS FOR MAKING SUBSTRATES AND SUBSTRATES FORMED THEREFROM

METHOD OF FABRICATING A COMPOSITE STRUCTURE WITH A STABLE BONDING L...

METHODS OF FORMING RELAXED LAYERS OF SEMICONDUCTOR MATERIALS, SEMIC...

METHOD OF FABRICATING EPITAXIALLY GROWN LAYERS ON A COMPOSITE STRUC...

PASSIVATION OF SEMICONDUCTOR STRUCTURES HAVING STRAINED LAYERS

METHODS FOR RELAXATION AND TRANSFER OF STRAINED LAYERS AND STRUCTUR...

RELAXATION AND TRANSFER OF STRAINED LAYERS

PROCESS FOR MAKING A GaN SUBSTRATE

METHOD OF RECYCLING AN EPITAXIED DONOR WAFER

METHOD OF FABRICATING AN EPITAXIALLY GROWN LAYER

METHODS FOR MAKING SUBSTRATES AND SUBSTRATES FORMED THEREFROM

METHOD OF FABRICATING AN EPITAXIALLY GROWN LAYER

OPTOELECTRONIC SUBSTRATE AND METHODS OF MAKING SAME

METHOD OF DETACHING A THIN FILM BY MELTING PRECIPITATES

METHOD OF FABRICATING HETEROEPITAXIAL MICROSTRUCTURES

METHODS FOR MAKING SUBSTRATES AND SUBSTRATES FORMED THEREFROM

Methods for making substrates and substrates formed therefrom

COMPOSITE STRUCTURE WITH HIGH HEAT DISSIPATION

Method for making a composite substrate and composite substrate acc...

Optoelectronic substrate and methods of making same

Method of fabricating an epitaxially grown layer

Methods for fabricating a germanium on insulator wafer

Composite structure with high heat dissipation