Bruce M. Green

Person

Gilbert, AZ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Transistors with source-connected field plates
- Patent number 12,148,820
- Issue date Nov 19, 2024
- NXP B.V.
- Congyong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with conductive elements formed over dielectri...
- Patent number 11,923,424
- Issue date Mar 5, 2024
- NXP B.V.
- Ibrahim Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with center fed gate
- Patent number 11,804,527
- Issue date Oct 31, 2023
- NXP USA, INC.
- Vikas Shilimkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming semiconductor devices using sacrificial capping...
- Patent number 11,784,236
- Issue date Oct 10, 2023
- NXP USA, INC.
- Jenn Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device with an etch stop layer and method therefor
- Patent number 11,437,301
- Issue date Sep 6, 2022
- NXP USA, INC.
- Yuanzheng Yue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with doped regions functioning as enhanced re...
- Patent number 10,971,613
- Issue date Apr 6, 2021
- NXP USA, INC.
- Yuanzheng Yue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with selectively etched surface passivation
- Patent number 10,957,790
- Issue date Mar 23, 2021
- NXP USA, INC.
- Bruce McRae Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with selectively etched surface passivation
- Patent number 10,825,924
- Issue date Nov 3, 2020
- NXP USA, INC.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with doped regions functioning as enhanced re...
- Patent number 10,644,142
- Issue date May 5, 2020
- NXP USA, INC.
- Yuanzheng Yue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a recessed ohmic contact and methods of f...
- Patent number 10,541,324
- Issue date Jan 21, 2020
- NXP USA, INC.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with selectively etched surface passivation
- Patent number 10,522,670
- Issue date Dec 31, 2019
- NXP USA, INC.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MISHFET and Schottky device integration
- Patent number 10,249,615
- Issue date Apr 2, 2019
- NXP USA, INC.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with an enhanced resistivity region and metho...
- Patent number 10,128,364
- Issue date Nov 13, 2018
- NXP USA, INC.
- Darrell Hill
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with a thermally conductive layer and methods...
- Patent number 10,074,588
- Issue date Sep 11, 2018
- NXP USA, INC.
- Lakshminarayan Viswanathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices with signal and temperature characteristic dependent contro...
- Patent number 10,033,374
- Issue date Jul 24, 2018
- NXP USA, INC.
- Bruce M. Green
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Device with a conductive feature formed over a cavity and method th...
- Patent number 9,871,107
- Issue date Jan 16, 2018
- NXP USA, INC.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power transistor device, semiconductor die and method of m...
- Patent number 9,825,162
- Issue date Nov 21, 2017
- NXP USA, INC.
- Philippe Renaud
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with selectively etched surface passivation
- Patent number 9,799,760
- Issue date Oct 24, 2017
- NXP USA, INC.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with integrated Schottky diodes and methods o...
- Patent number 9,685,345
- Issue date Jun 20, 2017
- NXP USA, INC.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices with signal characteristic dependent control circuitry and...
- Patent number 9,660,641
- Issue date May 23, 2017
- NXP USA, INC.
- Bruce M. Green
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor devices with a thermally conductive layer
- Patent number 9,614,046
- Issue date Apr 4, 2017
- NXP USA, INC.
- Lakshminarayan Viswanathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices with signal characteristic dependent control circuitry and...
- Patent number 9,438,224
- Issue date Sep 6, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Bruce M. Green
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor devices with a thermally conductive layer and methods...
- Patent number 9,362,198
- Issue date Jun 7, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Lakshminarayan Viswanathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for improving E-beam lithography gate metal profile for enha...
- Patent number 9,281,204
- Issue date Mar 8, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Karen E. Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High speed gallium nitride transistor devices
- Patent number 9,276,101
- Issue date Mar 1, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with selectively etched surface passivation
- Patent number 9,153,448
- Issue date Oct 6, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of making semiconductor devices with low leakage Schottky c...
- Patent number 9,123,645
- Issue date Sep 1, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with selectively etched surface passivation
- Patent number 9,111,868
- Issue date Aug 18, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High speed gallium nitride transistor devices
- Patent number 9,099,433
- Issue date Aug 4, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with dual layer passivation
- Patent number 9,029,986
- Issue date May 12, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Bruce M. Green
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE WITH CONDUCTIVE ELEMENTS FORMED OVER DIELECTRI...
- Publication number 20240250130
- Publication date Jul 25, 2024
- NXP B.V.
- Ibrahim Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH A FIELD PLATE HAVING A RECESSED REGION AN...
- Publication number 20240222443
- Publication date Jul 4, 2024
- NXP USA, Inc.
- Bernhard Grote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH A RECESSED FIELD PLATE AND METHOD OF FABR...
- Publication number 20240222442
- Publication date Jul 4, 2024
- NXP USA, Inc.
- Bernhard Grote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DIE WITH PRIMARY AND ANCILLARY TRANSISTOR ELEMENTS
- Publication number 20230411243
- Publication date Dec 21, 2023
- NXP USA, Inc.
- Humayun Kabir
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CIRCUIT DIE WITH ISOLATION TEST STRUCTURE
- Publication number 20230268237
- Publication date Aug 24, 2023
- NXP USA, Inc.
- Darrell Glenn Hill
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH AN INSULATING REGION FORMED BETWEEN A CON...
- Publication number 20230207676
- Publication date Jun 29, 2023
- NXP USA, Inc.
- Bruce McRae Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH A GATE ELECTRODE HAVING MULTIPLE REGIONS...
- Publication number 20230207675
- Publication date Jun 29, 2023
- NXP USA, Inc.
- Bernhard Grote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH SOURCE-CONNECTED FIELD PLATES
- Publication number 20230197839
- Publication date Jun 22, 2023
- NXP B.V.
- Congyong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH SOURCE-CONNECTED FIELD PLATES
- Publication number 20230197797
- Publication date Jun 22, 2023
- NXP B.V.
- Congyong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH CURRENT-CARRYING ELECTRODES AND A CONDUCT...
- Publication number 20230124686
- Publication date Apr 20, 2023
- NXP USA, Inc.
- Philippe Renaud
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor With Center Fed Gate
- Publication number 20230019549
- Publication date Jan 19, 2023
- NXP USA, Inc.
- Vikas Shilimkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAFER WITH SEMICONDUCTOR DEVICES AND INTEGRATED ELECTROSTATIC DISCH...
- Publication number 20220392856
- Publication date Dec 8, 2022
- NXP USA, Inc.
- Colby Greg Ramply
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH CONDUCTIVE ELEMENT FORMED OVER DIELECTRIC...
- Publication number 20220376060
- Publication date Nov 24, 2022
- NXP USA, Inc.
- Bernhard Grote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH CONDUCTIVE ELEMENTS FORMED OVER DIELECTRI...
- Publication number 20220208975
- Publication date Jun 30, 2022
- NXP B.V.
- Ibrahim Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE WITH AN ETCH STOP LAYER AND METHOD THEREFOR
- Publication number 20220122903
- Publication date Apr 21, 2022
- NXP USA, Inc.
- Yuanzheng Yue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING SEMICONDUCTOR DEVICES USING SACRIFICIAL CAPPING...
- Publication number 20220102529
- Publication date Mar 31, 2022
- NXP USA, Inc.
- Jenn Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH DOPED REGIONS FUNCTIONING AS ENHANCED RE...
- Publication number 20200227547
- Publication date Jul 16, 2020
- NXP USA, Inc.
- Yuanzheng Yue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH DOPED REGIONS FUNCTIONING AS ENHANCED RE...
- Publication number 20190198623
- Publication date Jun 27, 2019
- NXP USA, Inc.
- Yuanzheng Yue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH SELECTIVELY ETCHED SURFACE PASSIVATION
- Publication number 20190157440
- Publication date May 23, 2019
- NXP USA, Inc.
- Bruce McRae Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH SELECTIVELY ETCHED SURFACE PASSIVATION
- Publication number 20170317202
- Publication date Nov 2, 2017
- NXP USA, Inc.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH INTEGRATED SCHOTKY DIODES AND METHODS OF...
- Publication number 20170294531
- Publication date Oct 12, 2017
- NXP USA, Inc.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH AN ENHANCED RESISTIVITY REGION AND METHO...
- Publication number 20170278961
- Publication date Sep 28, 2017
- FREESCALE SEMICONDUCTOR, INC.
- Darrell Hill
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES WITH SIGNAL AND TEMPERATURE CHARACTERISTIC DEPENDENT CONTRO...
- Publication number 20170257091
- Publication date Sep 7, 2017
- NXP USA, Inc.
- Bruce M. Green
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR DEVICE WITH SELECTIVELY ETCHED SURFACE PASSIVATION
- Publication number 20170236929
- Publication date Aug 17, 2017
- NXP USA, Inc.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices with a Thermally Conductive Layer and Methods...
- Publication number 20170207142
- Publication date Jul 20, 2017
- NXP USA, Inc.
- Lakshminarayan Viswanathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES WITH SIGNAL CHARACTERISTIC DEPENDENT CONTROL CIRCUITRY AND...
- Publication number 20160380626
- Publication date Dec 29, 2016
- FREESCALE SEMICONDUCTOR, INC.
- BRUCE M. GREEN
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
DEVICE WITH A CONDUCTIVE FEATURE FORMED OVER A CAVITY AND METHOD TH...
- Publication number 20160343809
- Publication date Nov 24, 2016
- FREESCALE SEMICONDUCTOR, INC.
- BRUCE M. GREEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH A THERMALLY CONDUCTIVE LAYER
- Publication number 20160308010
- Publication date Oct 20, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Lakshminarayan Viswanathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES WITH SIGNAL CHARACTERISTIC DEPENDENT CONTROL CIRCUITRY AND...
- Publication number 20150381163
- Publication date Dec 31, 2015
- BRUCE M. GREEN
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Semiconductor Device with Selectively Etched Surface Passivation
- Publication number 20150357452
- Publication date Dec 10, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS

Bruce M. Green

Person

Patents Grantslast 30 patents

Transistors with source-connected field plates

Semiconductor device with conductive elements formed over dielectri...

Transistor with center fed gate

Methods for forming semiconductor devices using sacrificial capping...

Device with an etch stop layer and method therefor

Semiconductor devices with doped regions functioning as enhanced re...

Semiconductor device with selectively etched surface passivation

Semiconductor device with selectively etched surface passivation

Semiconductor devices with doped regions functioning as enhanced re...

Semiconductor device with a recessed ohmic contact and methods of f...

Semiconductor device with selectively etched surface passivation

MISHFET and Schottky device integration

Semiconductor devices with an enhanced resistivity region and metho...

Semiconductor devices with a thermally conductive layer and methods...

Devices with signal and temperature characteristic dependent contro...

Device with a conductive feature formed over a cavity and method th...

Vertical power transistor device, semiconductor die and method of m...

Semiconductor device with selectively etched surface passivation

Semiconductor devices with integrated Schottky diodes and methods o...

Devices with signal characteristic dependent control circuitry and...

Semiconductor devices with a thermally conductive layer

Devices with signal characteristic dependent control circuitry and...

Semiconductor devices with a thermally conductive layer and methods...

Method for improving E-beam lithography gate metal profile for enha...

High speed gallium nitride transistor devices

Semiconductor device with selectively etched surface passivation

Methods of making semiconductor devices with low leakage Schottky c...

Semiconductor device with selectively etched surface passivation

High speed gallium nitride transistor devices

Transistors with dual layer passivation

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE WITH CONDUCTIVE ELEMENTS FORMED OVER DIELECTRI...

SEMICONDUCTOR DEVICE WITH A FIELD PLATE HAVING A RECESSED REGION AN...

SEMICONDUCTOR DEVICE WITH A RECESSED FIELD PLATE AND METHOD OF FABR...

TRANSISTOR DIE WITH PRIMARY AND ANCILLARY TRANSISTOR ELEMENTS

CIRCUIT DIE WITH ISOLATION TEST STRUCTURE

SEMICONDUCTOR DEVICE WITH AN INSULATING REGION FORMED BETWEEN A CON...

SEMICONDUCTOR DEVICE WITH A GATE ELECTRODE HAVING MULTIPLE REGIONS...

TRANSISTORS WITH SOURCE-CONNECTED FIELD PLATES

TRANSISTORS WITH SOURCE-CONNECTED FIELD PLATES

SEMICONDUCTOR DEVICE WITH CURRENT-CARRYING ELECTRODES AND A CONDUCT...

Transistor With Center Fed Gate

WAFER WITH SEMICONDUCTOR DEVICES AND INTEGRATED ELECTROSTATIC DISCH...

SEMICONDUCTOR DEVICE WITH CONDUCTIVE ELEMENT FORMED OVER DIELECTRIC...

SEMICONDUCTOR DEVICE WITH CONDUCTIVE ELEMENTS FORMED OVER DIELECTRI...

DEVICE WITH AN ETCH STOP LAYER AND METHOD THEREFOR

METHODS FOR FORMING SEMICONDUCTOR DEVICES USING SACRIFICIAL CAPPING...

SEMICONDUCTOR DEVICES WITH DOPED REGIONS FUNCTIONING AS ENHANCED RE...

SEMICONDUCTOR DEVICES WITH DOPED REGIONS FUNCTIONING AS ENHANCED RE...

SEMICONDUCTOR DEVICE WITH SELECTIVELY ETCHED SURFACE PASSIVATION

SEMICONDUCTOR DEVICE WITH SELECTIVELY ETCHED SURFACE PASSIVATION

SEMICONDUCTOR DEVICES WITH INTEGRATED SCHOTKY DIODES AND METHODS OF...

SEMICONDUCTOR DEVICES WITH AN ENHANCED RESISTIVITY REGION AND METHO...

DEVICES WITH SIGNAL AND TEMPERATURE CHARACTERISTIC DEPENDENT CONTRO...

SEMICONDUCTOR DEVICE WITH SELECTIVELY ETCHED SURFACE PASSIVATION

Semiconductor Devices with a Thermally Conductive Layer and Methods...

DEVICES WITH SIGNAL CHARACTERISTIC DEPENDENT CONTROL CIRCUITRY AND...

DEVICE WITH A CONDUCTIVE FEATURE FORMED OVER A CAVITY AND METHOD TH...

SEMICONDUCTOR DEVICES WITH A THERMALLY CONDUCTIVE LAYER

DEVICES WITH SIGNAL CHARACTERISTIC DEPENDENT CONTROL CIRCUITRY AND...

Semiconductor Device with Selectively Etched Surface Passivation