Bunmi T. Adekore

Person

Medford, MA, US

People

Patents Grantslast 30 patents

Information Patent Grant
INP-based transistor fabrication
- Patent number 10,541,315
- Issue date Jan 21, 2020
- Purdue Research Foundation
- Peide Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
InP-based transistor fabrication
- Patent number 9,780,190
- Issue date Oct 3, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Peide Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistor on oxide semiconductor substrate
- Patent number 9,112,048
- Issue date Aug 18, 2015
- RAMGOSS INC.
- Bunmi T. Adekore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Rotated channel semiconductor field effect transistor
- Patent number 8,927,984
- Issue date Jan 6, 2015
- RamGoss, Inc.
- Bunmi T. Adekore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
InP-based transistor fabrication
- Patent number 8,329,541
- Issue date Dec 11, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Peide Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming zinc oxide based II-VI compound semiconductor la...
- Patent number 7,829,376
- Issue date Nov 9, 2010
- LumenZ, Inc.
- Bunmi T. Adekore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming zinc oxide based II-VI compound semiconductor la...
- Patent number 7,723,154
- Issue date May 25, 2010
- North Carolina State University
- Bunmi T. Adekore
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INP-BASED TRANSISTOR FABRICATION
- Publication number 20180019320
- Publication date Jan 18, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Peide Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ROTATED CHANNEL FIELD EFFECT TRANSISTOR
- Publication number 20150123124
- Publication date May 7, 2015
- RAMGOSS, INC.
- Bunmi T. ADEKORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED GATE BURIED CHANNEL FIELD EFFECT TRANSISTOR
- Publication number 20150021621
- Publication date Jan 22, 2015
- RAMGOSS, INC.
- Bunmi T. ADEKORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ROTATED CHANNEL SEMICONDUCTOR FIELD EFFECT TRANSISTOR
- Publication number 20130181215
- Publication date Jul 18, 2013
- RAMGOSS, INC.
- Bunmi T. ADEKORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD EFFECT TRANSISTOR ON OXIDE SEMICONDUCTOR SUBSTRATE
- Publication number 20130043468
- Publication date Feb 21, 2013
- RAMGOSS, INC.
- Bunmi T. ADEKORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
InP-Based Transistor Fabrication
- Publication number 20130040431
- Publication date Feb 14, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Peide Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
InP-Based Transistor Fabrication
- Publication number 20090042344
- Publication date Feb 12, 2009
- AmberWave Systems Corporation
- Peide Ye
- H01 - BASIC ELECTRIC ELEMENTS

Bunmi T. Adekore

Person

Patents Grantslast 30 patents

INP-based transistor fabrication

InP-based transistor fabrication

Vertical field effect transistor on oxide semiconductor substrate

Rotated channel semiconductor field effect transistor

InP-based transistor fabrication

Methods of forming zinc oxide based II-VI compound semiconductor la...

Methods of forming zinc oxide based II-VI compound semiconductor la...

Patents Applicationslast 30 patents

INP-BASED TRANSISTOR FABRICATION

ROTATED CHANNEL FIELD EFFECT TRANSISTOR

SELF-ALIGNED GATE BURIED CHANNEL FIELD EFFECT TRANSISTOR

ROTATED CHANNEL SEMICONDUCTOR FIELD EFFECT TRANSISTOR

VERTICAL FIELD EFFECT TRANSISTOR ON OXIDE SEMICONDUCTOR SUBSTRATE

InP-Based Transistor Fabrication

InP-Based Transistor Fabrication