Bunshiro Yamaki

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Fujisawa, JP

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Patents Grantslast 30 patents

Information Patent Grant
Bi-MOS type semiconductor integrated circuit device having high-fre...
- Patent number 5,238,850
- Issue date Aug 24, 1993
- Kabushiki Kaisha Toshiba
- Taira Matsunaga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
BiMOS structure having a protective diode
- Patent number 5,212,398
- Issue date May 18, 1993
- Kabushiki Kaisha Toshiba
- Taira Matsunaga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 5,100,812
- Issue date Mar 31, 1992
- Kabushiki Kaisha Toshiba
- Yoshiki Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-frequency amplifying semiconductor device
- Patent number 5,021,859
- Issue date Jun 4, 1991
- Kabushiki Kaisha Toshiba
- Takahiro Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing from a semiconductor wafer a dielectric sub...
- Patent number 4,962,056
- Issue date Oct 9, 1990
- Kabushiki Kaishi Toshiba
- Bunshiro Yamaki
- H01 - BASIC ELECTRIC ELEMENTS