Byong-man Kim

Person

Kunpo-city, KR

People

Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing a memory device
- Patent number 7,407,856
- Issue date Aug 5, 2008
- Samsung Electronics Co., Ltd.
- In-kyeong Yoo
- G11 - INFORMATION STORAGE
Information Patent Grant
Rewritable data storage using carbonaceous material and writing/rea...
- Patent number 7,020,064
- Issue date Mar 28, 2006
- Samsung Electronics Co., Ltd.
- Byong-man Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device comprising single transistor having functions of RAM...
- Patent number 6,999,346
- Issue date Feb 14, 2006
- Samsung Electronics Co., Ltd.
- In-kyeong Yoo
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for manufacturing a single electron memory device having qua...
- Patent number 6,946,346
- Issue date Sep 20, 2005
- Samsung Electronics Co., Ltd.
- Soo-doo Chae
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device including a transistor having functions of RAM and ROM
- Patent number 6,867,999
- Issue date Mar 15, 2005
- Samsung Electronics Co., Ltd.
- In-kyeong Yoo
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device comprising single transistor having functions of RAM...
- Patent number 6,740,925
- Issue date May 25, 2004
- Samsung Electronics Co., Ltd.
- In-kyeong Yoo
- G11 - INFORMATION STORAGE
Information Patent Grant
High-density information storage apparatus using electron emission...
- Patent number 6,687,210
- Issue date Feb 3, 2004
- Samsung Electronics Co., Ltd.
- In-kyeong Yoo
- G11 - INFORMATION STORAGE
Information Patent Grant
Single electron memory device comprising quantum dots between gate...
- Patent number 6,670,670
- Issue date Dec 30, 2003
- Samsung Electronics Co., Ltd.
- Soo-doo Chae
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for etching metal layer on a scale of nanometers
- Patent number 6,664,123
- Issue date Dec 16, 2003
- Samsung Electronics Co., Ltd.
- Byong-man Kim
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Multi-value single electron memory using double-quantum dot and dri...
- Patent number 6,597,036
- Issue date Jul 22, 2003
- Samsung Electronics Co., Ltd.
- Jo-won Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Single electron transistor using porous silicon and manufacturing m...
- Patent number 6,479,365
- Issue date Nov 12, 2002
- Samsung Electronics Co., Ltd.
- Jo-won Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single electron transistor using porous silicon
- Patent number 6,414,333
- Issue date Jul 2, 2002
- Samsung Electronics Co., Ltd.
- Jo-won Lee
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconducting YBCO device and superconducting YBCO device locally...
- Patent number 6,388,268
- Issue date May 14, 2002
- Samsung Electronics Co., Ltd.
- Byong-man Kim
- G01 - MEASURING TESTING
Information Patent Grant
MNOS-type memory using single electron transistor and driving metho...
- Patent number 6,313,503
- Issue date Nov 6, 2001
- Samsung Electronics Co., Ltd.
- Jo-won Lee
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Fabrication method of single electron tunneling device
- Patent number 6,268,273
- Issue date Jul 31, 2001
- Samsung Electronics Co., Ltd.
- Byong-man Kim
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
Memory device comprising single transistor having functions of RAM...
- Publication number 20060086966
- Publication date Apr 27, 2006
- Samsung Electronics Co., Ltd.
- In-kyeong Yoo
- G11 - INFORMATION STORAGE
Information Patent Application
Memory device comprising single transistor having functions of RAM...
- Publication number 20040160816
- Publication date Aug 19, 2004
- Samsung Electronics Co., Ltd.
- In-kyeong Yoo
- G11 - INFORMATION STORAGE
Information Patent Application
Memory device comprising single transistor having functions of RAM...
- Publication number 20040155283
- Publication date Aug 12, 2004
- SAMSUNG ELECTRONICS CO, LTD.
- In-kyeong Yoo
- G11 - INFORMATION STORAGE
Information Patent Application
Single electron memory device comprising quantum dots between gate...
- Publication number 20040076032
- Publication date Apr 22, 2004
- Samsung Electronics Co. Ltd.
- Soo-Doo Chae
- G11 - INFORMATION STORAGE
Information Patent Application
High-density information storage apparatus using electron emission...
- Publication number 20030053399
- Publication date Mar 20, 2003
- SAMSUNG ELECTRONICS CO., LTD.
- In-kyeong Yoo
- G11 - INFORMATION STORAGE
Information Patent Application
Single electron memory device comprising quantum dots between gate...
- Publication number 20020167002
- Publication date Nov 14, 2002
- Soo-Doo Chae
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method for etching metal layer on a scale of nanometers
- Publication number 20020168825
- Publication date Nov 14, 2002
- Byong-man Kim
- B82 - NANO-TECHNOLOGY
Information Patent Application
Single electron transistor using porous silicon and manufacturing m...
- Publication number 20020088969
- Publication date Jul 11, 2002
- Jo-won Lee
- B82 - NANO-TECHNOLOGY
Information Patent Application
Memory device comprising single transistor having functions of RAM...
- Publication number 20020088996
- Publication date Jul 11, 2002
- In-kyeong Yoo
- B82 - NANO-TECHNOLOGY
Information Patent Application
Rewritable data storage using carbonaceous material and writing/rea...
- Publication number 20020009632
- Publication date Jan 24, 2002
- SAMSUNG ELECTRONICS CO., LTD.
- Byong-man Kim
- B82 - NANO-TECHNOLOGY

Byong-man Kim

Person

Patents Grantslast 30 patents

Method of manufacturing a memory device

Rewritable data storage using carbonaceous material and writing/rea...

Memory device comprising single transistor having functions of RAM...

Method for manufacturing a single electron memory device having qua...

Memory device including a transistor having functions of RAM and ROM

Memory device comprising single transistor having functions of RAM...

High-density information storage apparatus using electron emission...

Single electron memory device comprising quantum dots between gate...

Method for etching metal layer on a scale of nanometers

Multi-value single electron memory using double-quantum dot and dri...

Single electron transistor using porous silicon and manufacturing m...

Single electron transistor using porous silicon

Semiconducting YBCO device and superconducting YBCO device locally...

MNOS-type memory using single electron transistor and driving metho...

Fabrication method of single electron tunneling device

Patents Applicationslast 30 patents

Memory device comprising single transistor having functions of RAM...

Memory device comprising single transistor having functions of RAM...

Memory device comprising single transistor having functions of RAM...

Single electron memory device comprising quantum dots between gate...

High-density information storage apparatus using electron emission...

Single electron memory device comprising quantum dots between gate...

Method for etching metal layer on a scale of nanometers

Single electron transistor using porous silicon and manufacturing m...

Memory device comprising single transistor having functions of RAM...

Rewritable data storage using carbonaceous material and writing/rea...