Cammy Rene Abernathy

Follow

Person

Gainesville, FL, US

People

Patents Grantslast 30 patents

Information Patent Grant
GaN-type enhancement MOSFET using hetero structure
- Patent number 6,914,273
- Issue date Jul 5, 2005
- University of Florida Research Foundation, Inc.
- Fan Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for selectively growing aluminum-containing layers
- Patent number 5,459,097
- Issue date Oct 17, 1995
- AT&T Corp.
- Cammy R. Abernathy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for selectively growing gallium-containing layers
- Patent number 5,227,006
- Issue date Jul 13, 1993
- AT&T Bell Laboratories
- Cammy R. Abernathy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaAs device fabrication utilizing metalorganic molecular beam epita...
- Patent number 5,171,704
- Issue date Dec 15, 1992
- AT&T Bell Laboratories
- Cammy R. Abernathy
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GaN-type enhancement MOSFET using hetero structure
- Publication number 20040041169
- Publication date Mar 4, 2004
- Fan Ren
- H01 - BASIC ELECTRIC ELEMENTS