Can Bayram

Person

Champaign, IL, US

People

Patents Grantslast 30 patents

Information Patent Grant
Thin film wafer transfer and structure for electronic devices
- Patent number 10,957,816
- Issue date Mar 23, 2021
- International Business Machines Corporation
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hetero-integration of III-N material on silicon
- Patent number 10,056,251
- Issue date Aug 21, 2018
- International Business Machines Corporation
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Back contact LED through spalling
- Patent number 9,865,769
- Issue date Jan 9, 2018
- International Business Machines Corporation
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride integration with CMOS technology
- Patent number 9,660,069
- Issue date May 23, 2017
- International Business Machines Corporation
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polarization free gallium nitride-based photonic devices on nanopat...
- Patent number 9,608,160
- Issue date Mar 28, 2017
- International Business Machines Corporation
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hetero-integration of III-N material on silicon
- Patent number 9,601,583
- Issue date Mar 21, 2017
- Armonk Business Machines Corporation
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride material and device deposition on graphene terminat...
- Patent number 9,574,287
- Issue date Feb 21, 2017
- GLOBALFOUNDRIES Inc.
- Can Bayram
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride integration with CMOS technology
- Patent number 9,564,526
- Issue date Feb 7, 2017
- International Business Machines Corporation
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective gallium nitride regrowth on (100) silicon
- Patent number 9,391,144
- Issue date Jul 12, 2016
- GLOBALFOUNDRIES Inc.
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride integration with CMOS technology
- Patent number 9,362,281
- Issue date Jun 7, 2016
- International Business Machines Corporation
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride integration with CMOS technology
- Patent number 9,331,076
- Issue date May 3, 2016
- International Business Machines Corporation
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Engineered base substrates for releasing III-V epitaxy through spal...
- Patent number 9,245,747
- Issue date Jan 26, 2016
- International Business Machines Corporation
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterogeneous integration of group III nitride on silicon for advan...
- Patent number 9,236,251
- Issue date Jan 12, 2016
- GLOBALFOUNDRIES Inc.
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laser-initiated exfoliation of group III-nitride films and applicat...
- Patent number 9,236,271
- Issue date Jan 12, 2016
- GLOBALFOUNDRIES Inc.
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective gallium nitride regrowth on (100) silicon
- Patent number 9,099,381
- Issue date Aug 4, 2015
- International Business Machines Corporation
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective gallium nitride regrowth on (100) silicon
- Patent number 9,059,075
- Issue date Jun 16, 2015
- International Business Machines Corporation
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controlled spalling of group III nitrides containing an embedded sp...
- Patent number 9,058,990
- Issue date Jun 16, 2015
- International Business Machines Corporation
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting diodes with via contact scheme
- Patent number 9,059,339
- Issue date Jun 16, 2015
- International Business Machines Corporation
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterogeneous integration of group III nitride on silicon for advan...
- Patent number 9,053,930
- Issue date Jun 9, 2015
- International Business Machines Corporation
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual phase gallium nitride material formation on (100) silicon
- Patent number 9,048,173
- Issue date Jun 2, 2015
- International Business Machines Corporation
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitrides on nanopatterned substrates
- Patent number 8,927,398
- Issue date Jan 6, 2015
- International Business Machines Corporation
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film wafer transfer and structure for electronic devices
- Patent number 8,916,451
- Issue date Dec 23, 2014
- International Business Machines Corporation
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HETERO-INTEGRATION OF III-N MATERIAL ON SILICON
- Publication number 20180315591
- Publication date Nov 1, 2018
- International Business Machines Corporation
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NORMALLY-OFF, CUBIC PHASE GALLIUM NITRIDE (GAN) FIELD-EFFECT TRANSI...
- Publication number 20180083133
- Publication date Mar 22, 2018
- THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETERO-INTEGRATION OF III-N MATERIAL ON SILICON
- Publication number 20170092483
- Publication date Mar 30, 2017
- International Business Machines Corporation
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK CONTACT LED THROUGH SPALLING
- Publication number 20160284930
- Publication date Sep 29, 2016
- International Business Machines Corporation
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE INTEGRATION WITH CMOS TECHNOLOGY
- Publication number 20160284832
- Publication date Sep 29, 2016
- International Business Machines Corporation
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE INTEGRATION WITH CMOS TECHNOLOGY
- Publication number 20160233244
- Publication date Aug 11, 2016
- International Business Machines Corporation
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETERO-INTEGRATION OF III-N MATERIAL ON SILICON
- Publication number 20160020283
- Publication date Jan 21, 2016
- International Business Machines Corporation
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE INTEGRATION WITH CMOS TECHNOLOGY
- Publication number 20150318283
- Publication date Nov 5, 2015
- International Business Machines Corporation
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENGINEERED BASE SUBSTRATES FOR RELEASING III-V EPITAXY THROUGH SPAL...
- Publication number 20150318168
- Publication date Nov 5, 2015
- International Business Machines Corporation
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE INTEGRATION WITH CMOS TECHNOLOGY
- Publication number 20150318276
- Publication date Nov 5, 2015
- International Business Machines Corporation
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE GALLIUM NITRIDE REGROWTH ON (100) SILICON
- Publication number 20150287790
- Publication date Oct 8, 2015
- International Business Machines Corporation
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROGENEOUS INTEGRATION OF GROUP III NITRIDE ON SILICON FOR ADVAN...
- Publication number 20150235838
- Publication date Aug 20, 2015
- International Business Machines Corporation
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTROLLED SPALLING OF GROUP III NITRIDES CONTAINING AN EMBEDDED SP...
- Publication number 20150179428
- Publication date Jun 25, 2015
- International Business Machines Corporation
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON HETEROJUNCTION PHOTOVOLTAIC DEVICE WITH NON-CRYSTALLINE WID...
- Publication number 20150122329
- Publication date May 7, 2015
- International Business Machines Corporation
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE MATERIAL AND DEVICE DEPOSITION ON GRAPHENE TERMINAT...
- Publication number 20150083036
- Publication date Mar 26, 2015
- International Business Machines Corporation
- Can Bayram
- C30 - CRYSTAL GROWTH
Information Patent Application
GALLIUM NITRIDE MATERIAL AND DEVICE DEPOSITION ON GRAPHENE TERMINAT...
- Publication number 20150084074
- Publication date Mar 26, 2015
- International Business Machines Corporation
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CURVATURE COMPENSATED SUBSTRATE AND METHOD OF FORMING SAME
- Publication number 20150035123
- Publication date Feb 5, 2015
- International Business Machines Corporation
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIN FILM WAFER TRANSFER AND STRUCTURE FOR ELECTRONIC DEVICES
- Publication number 20140220764
- Publication date Aug 7, 2014
- International Business Machines Corporation
- CAN BAYRAM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIN FILM WAFER TRANSFER AND STRUCTURE FOR ELECTRONIC DEVICES
- Publication number 20140217356
- Publication date Aug 7, 2014
- International Business Machines Corporation
- CAN BAYRAM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDES ON NANOPATTERNED SUBSTRATES
- Publication number 20140191283
- Publication date Jul 10, 2014
- International Business Machines Corporation
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDES ON NANOPATTERNED SUBSTRATES
- Publication number 20140191284
- Publication date Jul 10, 2014
- International Business Machines Corporation
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL PHASE GALLIUM NITRIDE MATERIAL FORMATION ON (100) SILICON
- Publication number 20140131722
- Publication date May 15, 2014
- International Business Machines Corporation
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE GALLIUM NITRIDE REGROWTH ON (100) SILICON
- Publication number 20140131724
- Publication date May 15, 2014
- International Business Machines Corporation
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE GALLIUM NITRIDE REGROWTH ON (100) SILICON
- Publication number 20140134830
- Publication date May 15, 2014
- International Business Machines Corporation
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LASER-INITIATED EXFOLIATION OF GROUP III-NITRIDE FILMS AND APPLICAT...
- Publication number 20130280885
- Publication date Oct 24, 2013
- International Business Machines Corporation
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROGENEOUS INTEGRATION OF GROUP III NITRIDE ON SILICON FOR ADVAN...
- Publication number 20130270608
- Publication date Oct 17, 2013
- International Business Machines Corporation
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Thin film wafer transfer and structure for electronic devices

Hetero-integration of III-N material on silicon

Back contact LED through spalling

Group III nitride integration with CMOS technology

Polarization free gallium nitride-based photonic devices on nanopat...

Hetero-integration of III-N material on silicon

Gallium nitride material and device deposition on graphene terminat...

Group III nitride integration with CMOS technology

Selective gallium nitride regrowth on (100) silicon

Group III nitride integration with CMOS technology

Group III nitride integration with CMOS technology

Engineered base substrates for releasing III-V epitaxy through spal...

Heterogeneous integration of group III nitride on silicon for advan...

Laser-initiated exfoliation of group III-nitride films and applicat...

Selective gallium nitride regrowth on (100) silicon

Selective gallium nitride regrowth on (100) silicon

Controlled spalling of group III nitrides containing an embedded sp...

Light emitting diodes with via contact scheme

Heterogeneous integration of group III nitride on silicon for advan...

Dual phase gallium nitride material formation on (100) silicon

Group III nitrides on nanopatterned substrates

Thin film wafer transfer and structure for electronic devices

Patents Applicationslast 30 patents

HETERO-INTEGRATION OF III-N MATERIAL ON SILICON

NORMALLY-OFF, CUBIC PHASE GALLIUM NITRIDE (GAN) FIELD-EFFECT TRANSI...

HETERO-INTEGRATION OF III-N MATERIAL ON SILICON

BACK CONTACT LED THROUGH SPALLING

GROUP III NITRIDE INTEGRATION WITH CMOS TECHNOLOGY

GROUP III NITRIDE INTEGRATION WITH CMOS TECHNOLOGY

HETERO-INTEGRATION OF III-N MATERIAL ON SILICON

GROUP III NITRIDE INTEGRATION WITH CMOS TECHNOLOGY

ENGINEERED BASE SUBSTRATES FOR RELEASING III-V EPITAXY THROUGH SPAL...

GROUP III NITRIDE INTEGRATION WITH CMOS TECHNOLOGY

SELECTIVE GALLIUM NITRIDE REGROWTH ON (100) SILICON

HETEROGENEOUS INTEGRATION OF GROUP III NITRIDE ON SILICON FOR ADVAN...

CONTROLLED SPALLING OF GROUP III NITRIDES CONTAINING AN EMBEDDED SP...

SILICON HETEROJUNCTION PHOTOVOLTAIC DEVICE WITH NON-CRYSTALLINE WID...

GALLIUM NITRIDE MATERIAL AND DEVICE DEPOSITION ON GRAPHENE TERMINAT...

GALLIUM NITRIDE MATERIAL AND DEVICE DEPOSITION ON GRAPHENE TERMINAT...

CURVATURE COMPENSATED SUBSTRATE AND METHOD OF FORMING SAME

THIN FILM WAFER TRANSFER AND STRUCTURE FOR ELECTRONIC DEVICES

THIN FILM WAFER TRANSFER AND STRUCTURE FOR ELECTRONIC DEVICES

GROUP III NITRIDES ON NANOPATTERNED SUBSTRATES

GROUP III NITRIDES ON NANOPATTERNED SUBSTRATES

DUAL PHASE GALLIUM NITRIDE MATERIAL FORMATION ON (100) SILICON

SELECTIVE GALLIUM NITRIDE REGROWTH ON (100) SILICON

SELECTIVE GALLIUM NITRIDE REGROWTH ON (100) SILICON

LASER-INITIATED EXFOLIATION OF GROUP III-NITRIDE FILMS AND APPLICAT...

HETEROGENEOUS INTEGRATION OF GROUP III NITRIDE ON SILICON FOR ADVAN...