Canhua Li

Follow

Person

Torrance, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Isolation structure for IGBT devices having an integrated diode
- Patent number 11,075,291
- Issue date Jul 27, 2021
- Infineon Technologies Austria AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar semiconductor device with multi-trench enhancement regions
- Patent number 10,164,078
- Issue date Dec 25, 2018
- Infineon Technologies Americas Corp.
- Florin Udrea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar semiconductor device with sub-cathode enhancement regions
- Patent number 9,871,128
- Issue date Jan 16, 2018
- Infineon Technologies Americas Corp.
- Florin Udrea
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Bipolar Semiconductor Device with Multi-Trench Enhancement Regions
- Publication number 20170271488
- Publication date Sep 21, 2017
- Infineon Technologies Americas Corp.
- Florin Udrea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar Semiconductor Device Having Localized Enhancement Regions
- Publication number 20170271445
- Publication date Sep 21, 2017
- Infineon Technologies Americas Corp.
- Florin Udrea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar Semiconductor Device with Sub-Cathode Enhancement Regions
- Publication number 20170271487
- Publication date Sep 21, 2017
- Infineon Technologies Americas Corp.
- Florin Udrea
- H01 - BASIC ELECTRIC ELEMENTS