Carlos H. Diaz

Person

Hsin-Chu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor devices and methods of manufacture thereof
- Patent number 10,157,928
- Issue date Dec 18, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jean-Pierre Colinge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices having a semiconductor material that is semimetal in bulk a...
- Patent number 9,564,493
- Issue date Feb 7, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jean-Pierre Colinge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Damascene gate electrode method for fabricating field effect transi...
- Patent number 6,673,683
- Issue date Jan 6, 2004
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Ming Sheu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a shallow ion implanted microelectronic stru...
- Patent number 6,582,995
- Issue date Jun 24, 2003
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ting-Hua Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to reduce the gate induced drain leakage current in CMOS dev...
- Patent number 6,548,363
- Issue date Apr 15, 2003
- Taiwan Semiconductor Manufacturing Company
- Chung-Cheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of an indium retrograde profile via antimony ion implanta...
- Patent number 6,500,739
- Issue date Dec 31, 2002
- Taiwan Semiconductor Manufacturing Company
- Howard Chih-Hao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra-shallow junction formation by novel process sequence for PMOSFET
- Patent number 6,380,021
- Issue date Apr 30, 2002
- Taiwan Semiconductor Manufacturing Company
- Jyh-Haur Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an indium retrograde profile via use of a low tem...
- Patent number 6,368,928
- Issue date Apr 9, 2002
- Taiwan Semiconductor Manufacturing Company
- Howard Chih-Hao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Drain leakage reduction by indium transient enchanced diffusion (TE...
- Patent number 6,284,579
- Issue date Sep 4, 2001
- Taiwan Semiconductor Manufacturing Company
- Jyh-Haur Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of shallow trench isolation (STI)
- Patent number 6,194,285
- Issue date Feb 27, 2001
- Taiwan Semiconductor Manufacturing Company
- Chung-Te Lin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MAGNETIC TUNNEL JUNCTION WITH REDUCED DAMAGE
- Publication number 20180166623
- Publication date Jun 14, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Carlos H. Diaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices and Methods of Manufacture Thereof
- Publication number 20180069011
- Publication date Mar 8, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jean-Pierre Colinge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES HAVING A SEMICONDUCTOR MATERIAL THAT IS SEMIMETAL IN BULK A...
- Publication number 20160268382
- Publication date Sep 15, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jean-Pierre Colinge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating a shallow ion implanted microelectronic stru...
- Publication number 20030013282
- Publication date Jan 16, 2003
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ting-Hua Hsieh
- H01 - BASIC ELECTRIC ELEMENTS

Carlos H. Diaz

Person

Patents Grantslast 30 patents

Semiconductor devices and methods of manufacture thereof

Devices having a semiconductor material that is semimetal in bulk a...

Damascene gate electrode method for fabricating field effect transi...

Method for fabricating a shallow ion implanted microelectronic stru...

Method to reduce the gate induced drain leakage current in CMOS dev...

Formation of an indium retrograde profile via antimony ion implanta...

Ultra-shallow junction formation by novel process sequence for PMOSFET

Method of forming an indium retrograde profile via use of a low tem...

Drain leakage reduction by indium transient enchanced diffusion (TE...

Formation of shallow trench isolation (STI)

Patents Applicationslast 30 patents

MAGNETIC TUNNEL JUNCTION WITH REDUCED DAMAGE

Semiconductor Devices and Methods of Manufacture Thereof

DEVICES HAVING A SEMICONDUCTOR MATERIAL THAT IS SEMIMETAL IN BULK A...

Method for fabricating a shallow ion implanted microelectronic stru...