Carsten Reichel

Person

Dresden, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Integrated circuits including epitaxially grown strain-inducing fil...
- Patent number 9,064,961
- Issue date Jun 23, 2015
- Global Foundries Inc.
- Joanna Wasyluk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with reduced threshold variability having a th...
- Patent number 8,674,416
- Issue date Mar 18, 2014
- GLOBALFOUNDRIES Inc.
- Carsten Reichel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of a channel semiconductor alloy by forming a hard mask l...
- Patent number 8,614,122
- Issue date Dec 24, 2013
- GLOBALFOUNDRIES Inc.
- Stephan-Detlef Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancing interface characteristics between a channel semiconductor...
- Patent number 8,609,482
- Issue date Dec 17, 2013
- GLOBALFOUNDRIES Inc.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Adjusting of strain caused in a transistor channel by semiconductor...
- Patent number 8,518,784
- Issue date Aug 27, 2013
- GLOBALFOUNDRIES Inc.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancing deposition uniformity of a channel semiconductor alloy by...
- Patent number 8,324,119
- Issue date Dec 4, 2012
- GLOBALFOUNDRIES Inc.
- Carsten Reichel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of a channel semiconductor alloy by depositing a hard mas...
- Patent number 8,293,596
- Issue date Oct 23, 2012
- GLOBALFOUNDRIES Inc.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancing selectivity during formation of a channel semiconductor a...
- Patent number 8,283,225
- Issue date Oct 9, 2012
- GLOBALFOUNDRIES Inc.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancing interface characteristics between a channel semiconductor...
- Patent number 8,247,282
- Issue date Aug 21, 2012
- GLOBALFOUNDRIES, INC.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED CIRCUITS INCLUDING EPITAXIALLY GROWN STRAIN-INDUCING FIL...
- Publication number 20150076560
- Publication date Mar 19, 2015
- GLOBALFOUNDRIES, Inc.
- Joanna Wasyluk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ADJUSTING OF STRAIN CAUSED IN A TRANSISTOR CHANNEL BY SEMICONDUCTOR...
- Publication number 20130307090
- Publication date Nov 21, 2013
- GLOBALFOUNDRIES INC.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TMAH RECESS FOR SILICON GERMANIUM IN POSITIVE CHANNEL REGION FOR CM...
- Publication number 20130299874
- Publication date Nov 14, 2013
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Joanna Wasyluk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH REDUCED THRESHOLD VARIABILITY HAVING A TH...
- Publication number 20130113019
- Publication date May 9, 2013
- GLOBALFOUNDRIES INC.
- Carsten Reichel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCING INTERFACE CHARACTERISTICS BETWEEN A CHANNEL SEMICONDUCTOR...
- Publication number 20120282760
- Publication date Nov 8, 2012
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF A CHANNEL SEMICONDUCTOR ALLOY BY FORMING A HARD MASK L...
- Publication number 20120164805
- Publication date Jun 28, 2012
- GLOBALFOUNDRIES INC.
- Stephan-Detlef Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCING INTERFACE CHARACTERISTICS BETWEEN A CHANNEL SEMICONDUCTOR...
- Publication number 20110129970
- Publication date Jun 2, 2011
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF A CHANNEL SEMICONDUCTOR ALLOY BY DEPOSITING A HARD MAS...
- Publication number 20110027952
- Publication date Feb 3, 2011
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCING SELECTIVITY DURING FORMATION OF A CHANNEL SEMICONDUCTOR A...
- Publication number 20100327368
- Publication date Dec 30, 2010
- Stephan KRONHOLZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCING DEPOSITION UNIFORMITY OF A CHANNEL SEMICONDUCTOR ALLOY BY...
- Publication number 20100289094
- Publication date Nov 18, 2010
- Carsten Reichel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ADJUSTING OF STRAIN CAUSED IN A TRANSISTOR CHANNEL BY SEMICONDUCTOR...
- Publication number 20100164016
- Publication date Jul 1, 2010
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming gate insulation layers of different characteristics
- Publication number 20060148163
- Publication date Jul 6, 2006
- Karsten Wieczorek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming sidewall spacers
- Publication number 20050233532
- Publication date Oct 20, 2005
- Markus Lenski
- H01 - BASIC ELECTRIC ELEMENTS

Carsten Reichel

Person

Patents Grantslast 30 patents

Integrated circuits including epitaxially grown strain-inducing fil...

Semiconductor device with reduced threshold variability having a th...

Formation of a channel semiconductor alloy by forming a hard mask l...

Enhancing interface characteristics between a channel semiconductor...

Adjusting of strain caused in a transistor channel by semiconductor...

Enhancing deposition uniformity of a channel semiconductor alloy by...

Formation of a channel semiconductor alloy by depositing a hard mas...

Enhancing selectivity during formation of a channel semiconductor a...

Enhancing interface characteristics between a channel semiconductor...

Patents Applicationslast 30 patents

INTEGRATED CIRCUITS INCLUDING EPITAXIALLY GROWN STRAIN-INDUCING FIL...

ADJUSTING OF STRAIN CAUSED IN A TRANSISTOR CHANNEL BY SEMICONDUCTOR...

TMAH RECESS FOR SILICON GERMANIUM IN POSITIVE CHANNEL REGION FOR CM...

SEMICONDUCTOR DEVICE WITH REDUCED THRESHOLD VARIABILITY HAVING A TH...

ENHANCING INTERFACE CHARACTERISTICS BETWEEN A CHANNEL SEMICONDUCTOR...

FORMATION OF A CHANNEL SEMICONDUCTOR ALLOY BY FORMING A HARD MASK L...

ENHANCING INTERFACE CHARACTERISTICS BETWEEN A CHANNEL SEMICONDUCTOR...

FORMATION OF A CHANNEL SEMICONDUCTOR ALLOY BY DEPOSITING A HARD MAS...

ENHANCING SELECTIVITY DURING FORMATION OF A CHANNEL SEMICONDUCTOR A...

ENHANCING DEPOSITION UNIFORMITY OF A CHANNEL SEMICONDUCTOR ALLOY BY...

ADJUSTING OF STRAIN CAUSED IN A TRANSISTOR CHANNEL BY SEMICONDUCTOR...

Method of forming gate insulation layers of different characteristics

Method of forming sidewall spacers