Carsten Schaeffer

Person

Annenheim, AT

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device including bonding pad metal layer structure
- Patent number 12,183,696
- Issue date Dec 31, 2024
- Infineon Technologies AG
- Evelyn Napetschnig
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device protection using an anti-reflective layer
- Patent number 12,046,509
- Issue date Jul 23, 2024
- Infineon Technologies AG
- Stephan Voss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including bonding pad metal layer structure
- Patent number 11,764,176
- Issue date Sep 19, 2023
- Infineon Technologies AG
- Evelyn Napetschnig
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and a method of forming the semiconductor device
- Patent number 11,171,049
- Issue date Nov 9, 2021
- Infineon Technologies AG
- Werner Robl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing a semiconductor de...
- Patent number 11,139,375
- Issue date Oct 5, 2021
- Infineon Technologies AG
- Carsten Schaeffer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device having a metal adhesion and ba...
- Patent number 10,777,506
- Issue date Sep 15, 2020
- Infineon Technologies AG
- Frank Hille
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a metal adhesion and barrier structure...
- Patent number 10,475,743
- Issue date Nov 12, 2019
- Infineon Technologies AG
- Frank Hille
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried insulator regions and methods of formation thereof
- Patent number 10,410,911
- Issue date Sep 10, 2019
- Infineon Technologies AG
- Carsten Schaeffer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-organizing barrier layer disposed between a metallization laye...
- Patent number 10,332,793
- Issue date Jun 25, 2019
- Infineon Technologies Austria AG
- Werner Robl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming a contact layer on a semiconductor body
- Patent number 10,002,930
- Issue date Jun 19, 2018
- Infineon Technologies AG
- Roland Rupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a passivation layer
- Patent number 9,859,395
- Issue date Jan 2, 2018
- Infineon Technologies AG
- Gerhard Schmidt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a reduced band gap zone
- Patent number 9,859,272
- Issue date Jan 2, 2018
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench transistor having a doped semiconductor region
- Patent number 9,711,621
- Issue date Jul 18, 2017
- Infineon Technologies AG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of operating a reverse conducting IGBT
- Patent number 9,571,087
- Issue date Feb 14, 2017
- Infineon Technologies AG
- Frank Pfirsch
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor devices
- Patent number 9,337,185
- Issue date May 10, 2016
- Infineon Technologies AG
- Frank Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of operating a reverse conducting IGBT
- Patent number 9,231,581
- Issue date Jan 5, 2016
- Infineon Technologies AG
- Frank Pfirsch
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Reverse conducting IGBT
- Patent number 9,214,521
- Issue date Dec 15, 2015
- Infineon Technologies AG
- Dorothea Werber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a passivation layer
- Patent number 8,884,342
- Issue date Nov 11, 2014
- Infineon Technologies AG
- Gerhard Schmidt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral trench transistor, as well as a method for its production
- Patent number 8,815,686
- Issue date Aug 26, 2014
- Infineon Technologies AG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component
- Patent number 8,304,305
- Issue date Nov 6, 2012
- Infineon Technologies Austria AG
- Davide Chiola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method
- Patent number 8,252,671
- Issue date Aug 28, 2012
- Infineon Technologies Austria AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a semiconductor component
- Patent number 8,003,456
- Issue date Aug 23, 2011
- Infineon Technologies Austria AG
- Davide Chiola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method
- Patent number 8,003,502
- Issue date Aug 23, 2011
- Infineon Technologies Austria AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a free wheeling diode
- Patent number 7,880,200
- Issue date Feb 1, 2011
- Infineon Technologies Austria AG
- Frank Hille
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THEREOF
- Publication number 20240113216
- Publication date Apr 4, 2024
- INFINEON TECHNOLOGIES AG
- Yuliya Lisunova
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Including Bonding Pad Metal Layer Structure
- Publication number 20230395539
- Publication date Dec 7, 2023
- INFINEON TECHNOLOGIES AG
- Evelyn Napetschnig
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Voltage Semiconductor Device with Step Topography Passivation...
- Publication number 20230343726
- Publication date Oct 26, 2023
- INFINEON TECHNOLOGIES AG
- Angelika Koprowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHIP ARRANGEMENT, CHIP PACKAGE, METHOD OF FORMING A CHIP ARRANGEMEN...
- Publication number 20230274996
- Publication date Aug 31, 2023
- INFINEON TECHNOLOGIES AG
- Stefan SCHWAB
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230154978
- Publication date May 18, 2023
- INFINEON TECHNOLOGIES AG
- Carsten SCHAEFFER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE PROTECTION
- Publication number 20220199464
- Publication date Jun 23, 2022
- INFINEON TECHNOLOGIES AG
- Stephan VOSS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Including Bonding Pad Metal Layer Structure
- Publication number 20220059477
- Publication date Feb 24, 2022
- INFINEON TECHNOLOGIES AG
- Evelyn Napetschnig
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Voltage Semiconductor Device with Step Topography Passivation...
- Publication number 20210151391
- Publication date May 20, 2021
- INFINEON TECHNOLOGIES AG
- Angelika Koprowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Semiconductor Device Having a Metal Adhesion and Ba...
- Publication number 20200013722
- Publication date Jan 9, 2020
- Frank Hille
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DE...
- Publication number 20200013859
- Publication date Jan 9, 2020
- INFINEON TECHNOLOGIES AG
- Carsten SCHAEFFER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND A METHOD OF FORMING THE SEMICONDUCTOR DEVICE
- Publication number 20190267283
- Publication date Aug 29, 2019
- Infineon Technologies Austria AG
- Werner Robl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Buried Insulator Regions and Methods of Formation Thereof
- Publication number 20180166324
- Publication date Jun 14, 2018
- INFINEON TECHNOLOGIES AG
- Carsten Schaeffer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having a Metal Adhesion and Barrier Structure...
- Publication number 20170271268
- Publication date Sep 21, 2017
- INFINEON TECHNOLOGIES AG
- Frank Hille
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Forming a Contact Layer on a Semiconductor Body
- Publication number 20170162390
- Publication date Jun 8, 2017
- INFINEON TECHNOLOGIES AG
- Roland Rupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ORGANIZING BARRIER LAYER DISPOSED BETWEEN A METALLIZATION LAYE...
- Publication number 20170154813
- Publication date Jun 1, 2017
- Infineon Technologies Austria AG
- Werner Robl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with a Reduced Band Gap Zone
- Publication number 20170025408
- Publication date Jan 26, 2017
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Operating a Reverse Conducting IGBT
- Publication number 20160226477
- Publication date Aug 4, 2016
- INFINEON TECHNOLOGIES AG
- Frank Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE,POWER ELECTRONIC MODULE, AND METHOD FOR...
- Publication number 20150262814
- Publication date Sep 17, 2015
- INFINEON TECHNOLOGIES AG
- Mathias Plappert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices
- Publication number 20150179637
- Publication date Jun 25, 2015
- Frank Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Operating a Reverse Conducting IGBT
- Publication number 20150109050
- Publication date Apr 23, 2015
- INFINEON TECHNOLOGIES AG
- Frank Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with a Passivation Layer
- Publication number 20150056788
- Publication date Feb 26, 2015
- INFINEON TECHNOLOGIES AG
- Gerhard Schmidt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench Transistor Having a Doped Semiconductor Region
- Publication number 20140332885
- Publication date Nov 13, 2014
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with a Passivation Layer
- Publication number 20140061733
- Publication date Mar 6, 2014
- INFINEON TECHNOLOGIES AG
- Gerhard Schmidt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reverse Conducting IGBT
- Publication number 20130341673
- Publication date Dec 26, 2013
- INFINEON TECHNOLOGIES AG
- Frank Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reverse Conducting IGBT
- Publication number 20130341674
- Publication date Dec 26, 2013
- INFINEON TECHNOLOGIES AG
- Dorothea Werber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL TRENCH TRANSISTOR, AS WELL AS A METHOD FOR ITS PRODUCTION
- Publication number 20130224921
- Publication date Aug 29, 2013
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR COMPONENT
- Publication number 20110233728
- Publication date Sep 29, 2011
- Infineon Technologies Austria AG
- DAVIDE CHIOLA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20090085103
- Publication date Apr 2, 2009
- Infineon Technologies Austria AG
- Frank Hille
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT, AND A SEMICONDUCTOR...
- Publication number 20080315363
- Publication date Dec 25, 2008
- Infineon Technologies Austria AG
- DAVIDE CHIOLA
- H01 - BASIC ELECTRIC ELEMENTS

Carsten Schaeffer

Person

Patents Grantslast 30 patents

Semiconductor device including bonding pad metal layer structure

Semiconductor device protection using an anti-reflective layer

Semiconductor device including bonding pad metal layer structure

Semiconductor device and a method of forming the semiconductor device

Semiconductor device and method of manufacturing a semiconductor de...

Silicon carbide semiconductor device having a metal adhesion and ba...

Semiconductor device having a metal adhesion and barrier structure...

Buried insulator regions and methods of formation thereof

Self-organizing barrier layer disposed between a metallization laye...

Forming a contact layer on a semiconductor body

Semiconductor device with a passivation layer

Semiconductor device with a reduced band gap zone

Trench transistor having a doped semiconductor region

Method of operating a reverse conducting IGBT

Semiconductor devices

Method of operating a reverse conducting IGBT

Reverse conducting IGBT

Semiconductor device with a passivation layer

Lateral trench transistor, as well as a method for its production

Semiconductor component

Semiconductor device and fabrication method

Method for producing a semiconductor component

Semiconductor device and fabrication method

Semiconductor device including a free wheeling diode

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THEREOF

Semiconductor Device Including Bonding Pad Metal Layer Structure

High Voltage Semiconductor Device with Step Topography Passivation...

CHIP ARRANGEMENT, CHIP PACKAGE, METHOD OF FORMING A CHIP ARRANGEMEN...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE PROTECTION

Semiconductor Device Including Bonding Pad Metal Layer Structure

High Voltage Semiconductor Device with Step Topography Passivation...

Silicon Carbide Semiconductor Device Having a Metal Adhesion and Ba...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DE...

SEMICONDUCTOR DEVICE AND A METHOD OF FORMING THE SEMICONDUCTOR DEVICE

Buried Insulator Regions and Methods of Formation Thereof

Semiconductor Device Having a Metal Adhesion and Barrier Structure...

Forming a Contact Layer on a Semiconductor Body

SELF-ORGANIZING BARRIER LAYER DISPOSED BETWEEN A METALLIZATION LAYE...

Semiconductor Device with a Reduced Band Gap Zone

Method of Operating a Reverse Conducting IGBT

POWER SEMICONDUCTOR DEVICE,POWER ELECTRONIC MODULE, AND METHOD FOR...

Semiconductor Devices

Method of Operating a Reverse Conducting IGBT

Semiconductor Device with a Passivation Layer

Trench Transistor Having a Doped Semiconductor Region

Semiconductor Device with a Passivation Layer

Reverse Conducting IGBT

Reverse Conducting IGBT

LATERAL TRENCH TRANSISTOR, AS WELL AS A METHOD FOR ITS PRODUCTION

SEMICONDUCTOR COMPONENT

SEMICONDUCTOR DEVICE AND METHOD

METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT, AND A SEMICONDUCTOR...