Carsten Schaffer

Person

Treffen B. Villach, AT

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device having a corrosion-resistant metallization and...
- Patent number 9,355,958
- Issue date May 31, 2016
- Infineon Technologies AG
- Carsten Schäffer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral trench transistor, as well as a method for its production
- Patent number 8,431,988
- Issue date Apr 30, 2013
- Infineon Technologies AG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method
- Patent number 8,367,532
- Issue date Feb 5, 2013
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method suitable therefor
- Patent number 7,514,750
- Issue date Apr 7, 2009
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power transistor cell and power transistor component with fusible link
- Patent number 7,253,475
- Issue date Aug 7, 2007
- Infineon Technologies AG
- Carsten Schäffer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor component, IGBT and field-effect transistor
- Patent number 6,815,769
- Issue date Nov 9, 2004
- Infineon Technologies AG
- Frank Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor Device Having a Corrosion-Resistant Metallization and...
- Publication number 20150115449
- Publication date Apr 30, 2015
- INFINEON TECHNOLOGIES AG
- Carsten Schäffer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD
- Publication number 20120315747
- Publication date Dec 13, 2012
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD
- Publication number 20110275202
- Publication date Nov 10, 2011
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and Fabrication method
- Publication number 20090186462
- Publication date Jul 23, 2009
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating a field stop zone
- Publication number 20060205122
- Publication date Sep 14, 2006
- Infineon Technologies Austria AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral trench transistor, as well as a method for its production
- Publication number 20060118862
- Publication date Jun 8, 2006
- Infineon Technologies AG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and fabrication method suitable therefor
- Publication number 20060081923
- Publication date Apr 20, 2006
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power transistor cell and power transistor component with fusible link
- Publication number 20050157571
- Publication date Jul 21, 2005
- Infineon Technologies AG
- Carsten Schaffer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power semiconductor component, IGBT, IEGT, field-effect transistor,...
- Publication number 20030160270
- Publication date Aug 28, 2003
- Frank Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field-effect transistor configuration with a trench-shaped gate ele...
- Publication number 20020006703
- Publication date Jan 17, 2002
- Frank Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS

Carsten Schaffer

Person

Patents Grantslast 30 patents

Semiconductor device having a corrosion-resistant metallization and...

Lateral trench transistor, as well as a method for its production

Semiconductor device and fabrication method

Semiconductor device and fabrication method suitable therefor

Power transistor cell and power transistor component with fusible link

Power semiconductor component, IGBT and field-effect transistor

Patents Applicationslast 30 patents

Semiconductor Device Having a Corrosion-Resistant Metallization and...

SEMICONDUCTOR DEVICE AND FABRICATION METHOD

SEMICONDUCTOR DEVICE AND FABRICATION METHOD

Semiconductor device and Fabrication method

Method for fabricating a field stop zone

Lateral trench transistor, as well as a method for its production

Semiconductor device and fabrication method suitable therefor

Power transistor cell and power transistor component with fusible link

Power semiconductor component, IGBT, IEGT, field-effect transistor,...

Field-effect transistor configuration with a trench-shaped gate ele...