Casey Scott

Person

Dresden, DE

People

Patents Grantslast 30 patents

Information Patent Grant
SOI transistor having drain and source regions of reduced length an...
- Patent number 9,450,073
- Issue date Sep 20, 2016
- Advanced Micro Devices, Inc.
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming silicon/germanium containing drain/source region...
- Patent number 8,652,913
- Issue date Feb 18, 2014
- GLOBALFOUNDRIES Inc.
- Andreas Gehring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Test structure for monitoring process characteristics for forming e...
- Patent number 8,530,894
- Issue date Sep 10, 2013
- Advanced Micro Devices, Inc.
- Anthony Mowry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Temperature monitoring in a semiconductor device by thermocouples d...
- Patent number 8,373,244
- Issue date Feb 12, 2013
- GLOBALFOUNDRIES Inc.
- Anthony Mowry
- G01 - MEASURING TESTING
Information Patent Grant
Transistor with embedded Si/Ge material having enhanced across-subs...
- Patent number 8,334,569
- Issue date Dec 18, 2012
- Advanced Micro Devices, Inc.
- Robert Mulfinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Test structure for monitoring process characteristics for forming e...
- Patent number 8,227,266
- Issue date Jul 24, 2012
- Advanced Micro Devices, Inc.
- Anthony Mowry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cold temperature control in a semiconductor device
- Patent number 8,212,184
- Issue date Jul 3, 2012
- GLOBALFOUNDRIES, INC.
- Anthony Mowry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with embedded SI/GE material having enhanced across-subs...
- Patent number 8,183,100
- Issue date May 22, 2012
- Advanced Micro Devices, Inc.
- Robert Mulfinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device comprising an asymmetric embedded semiconductor a...
- Patent number 8,138,050
- Issue date Mar 20, 2012
- GLOBALFOUNDRIES Inc.
- Vassilios Papageorgiou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In situ formed drain and source regions in a silicon/germanium cont...
- Patent number 8,093,634
- Issue date Jan 10, 2012
- GLOBALFOUNDRIES Inc.
- Anthony Mowry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for creating tensile strain by selectively applying stress m...
- Patent number 7,897,451
- Issue date Mar 1, 2011
- GLOBALFOUNDRIES Inc.
- Maciej Wiatr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduction of memory instability by local adaptation of re-crystalli...
- Patent number 7,811,876
- Issue date Oct 12, 2010
- GLOBALFOUNDRIES Inc.
- Casey Scott
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Test structure for monitoring process characteristics for forming e...
- Patent number 7,713,763
- Issue date May 11, 2010
- Advanced Micro Devices, Inc.
- Anthony Mowry
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TEST STRUCTURE FOR MONITORING PROCESS CHARACTERISTICS FOR FORMING E...
- Publication number 20120223309
- Publication date Sep 6, 2012
- Advanced Micro Devices, Inc.
- ANTHONY MOWRY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH EMBEDDED SI/GE MATERIAL HAVING ENHANCED ACROSS-SUBS...
- Publication number 20120211810
- Publication date Aug 23, 2012
- Advanced Micro Devices, Inc.
- Robert Mulfinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TEST STRUCTURE FOR MONITORING PROCESS CHARACTERISTICS FOR FORMING E...
- Publication number 20100155727
- Publication date Jun 24, 2010
- Advanced Micro Devices, Inc.
- ANTHONY MOWRY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K ETCH STOP LAYER OF REDUCED THICKNESS FOR PATTERNING A DIELEC...
- Publication number 20100090321
- Publication date Apr 15, 2010
- Robert Mulfinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE COMPRISING AN ASYMMETRIC EMBEDDED SEMICONDUCTOR A...
- Publication number 20100081244
- Publication date Apr 1, 2010
- Vassilios Papageorgiou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH EMBEDDED SI/GE MATERIAL HAVING ENHANCED ACROSS-SUBS...
- Publication number 20100078691
- Publication date Apr 1, 2010
- Robert Mulfinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IN SITU FORMED DRAIN AND SOURCE REGIONS IN A SILICON/GERMANIUM CONT...
- Publication number 20090294860
- Publication date Dec 3, 2009
- Anthony Mowry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COLD TEMPERATURE CONTROL IN A SEMICONDUCTOR DEVICE
- Publication number 20090295457
- Publication date Dec 3, 2009
- Anthony Mowry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCTION OF MEMORY INSTABILITY BY LOCAL ADAPTATION OF RE-CRYSTALLI...
- Publication number 20090221115
- Publication date Sep 3, 2009
- Casey Scott
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TEST STRUCTURE FOR MONITORING PROCESS CHARACTERISTICS FOR FORMING E...
- Publication number 20090166618
- Publication date Jul 2, 2009
- Anthony Mowry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TEMPERATURE MONITORING IN A SEMICONDUCTOR DEVICE BY THERMOCOUPLES D...
- Publication number 20090166794
- Publication date Jul 2, 2009
- Anthony Mowry
- G01 - MEASURING TESTING
Information Patent Application
METHOD FOR CREATING TENSILE STRAIN BY SELECTIVELY APPLYING STRESS M...
- Publication number 20090142900
- Publication date Jun 4, 2009
- Maciej Wiatr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPENSATION OF OPERATING TIME RELATED DEGRADATION OF OPERATING SPE...
- Publication number 20090085652
- Publication date Apr 2, 2009
- Maciej Wiatr
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
TECHNIQUE FOR ENHANCING DOPANT ACTIVATION BY USING MULTIPLE SEQUENT...
- Publication number 20080268597
- Publication date Oct 30, 2008
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI TRANSISTOR HAVING DRAIN AND SOURCE REGIONS OF REDUCED LENGTH AN...
- Publication number 20080237712
- Publication date Oct 2, 2008
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SILICON/GERMANIUM CONTAINING DRAIN/SOURCE REGION...
- Publication number 20080182371
- Publication date Jul 31, 2008
- Andreas Gehring
- H01 - BASIC ELECTRIC ELEMENTS

Casey Scott

Person

Patents Grantslast 30 patents

SOI transistor having drain and source regions of reduced length an...

Method for forming silicon/germanium containing drain/source region...

Test structure for monitoring process characteristics for forming e...

Temperature monitoring in a semiconductor device by thermocouples d...

Transistor with embedded Si/Ge material having enhanced across-subs...

Test structure for monitoring process characteristics for forming e...

Cold temperature control in a semiconductor device

Transistor with embedded SI/GE material having enhanced across-subs...

Transistor device comprising an asymmetric embedded semiconductor a...

In situ formed drain and source regions in a silicon/germanium cont...

Method for creating tensile strain by selectively applying stress m...

Reduction of memory instability by local adaptation of re-crystalli...

Test structure for monitoring process characteristics for forming e...

Patents Applicationslast 30 patents

TEST STRUCTURE FOR MONITORING PROCESS CHARACTERISTICS FOR FORMING E...

TRANSISTOR WITH EMBEDDED SI/GE MATERIAL HAVING ENHANCED ACROSS-SUBS...

TEST STRUCTURE FOR MONITORING PROCESS CHARACTERISTICS FOR FORMING E...

HIGH-K ETCH STOP LAYER OF REDUCED THICKNESS FOR PATTERNING A DIELEC...

TRANSISTOR DEVICE COMPRISING AN ASYMMETRIC EMBEDDED SEMICONDUCTOR A...

TRANSISTOR WITH EMBEDDED SI/GE MATERIAL HAVING ENHANCED ACROSS-SUBS...

IN SITU FORMED DRAIN AND SOURCE REGIONS IN A SILICON/GERMANIUM CONT...

COLD TEMPERATURE CONTROL IN A SEMICONDUCTOR DEVICE

REDUCTION OF MEMORY INSTABILITY BY LOCAL ADAPTATION OF RE-CRYSTALLI...

TEST STRUCTURE FOR MONITORING PROCESS CHARACTERISTICS FOR FORMING E...

TEMPERATURE MONITORING IN A SEMICONDUCTOR DEVICE BY THERMOCOUPLES D...

METHOD FOR CREATING TENSILE STRAIN BY SELECTIVELY APPLYING STRESS M...

COMPENSATION OF OPERATING TIME RELATED DEGRADATION OF OPERATING SPE...

TECHNIQUE FOR ENHANCING DOPANT ACTIVATION BY USING MULTIPLE SEQUENT...

SOI TRANSISTOR HAVING DRAIN AND SOURCE REGIONS OF REDUCED LENGTH AN...

METHOD FOR FORMING SILICON/GERMANIUM CONTAINING DRAIN/SOURCE REGION...