Caspar Leendertz

Person

Munich, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device including current spread region
- Patent number 12,176,396
- Issue date Dec 24, 2024
- Infineon Technologies AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC devices with shielding structure
- Patent number 12,119,377
- Issue date Oct 15, 2024
- Infineon Technologies AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device fabricated using channeling implant
- Patent number 12,057,316
- Issue date Aug 6, 2024
- Infineon Technologies AG
- Moriz Jelinek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including trench structure and manufacturing m...
- Patent number 11,929,397
- Issue date Mar 12, 2024
- Infineon Technologies AG
- Thomas Basler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion beam implantation method and semiconductor device
- Patent number 11,908,694
- Issue date Feb 20, 2024
- Infineon Technologies AG
- Moriz Jelinek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a silicon carbide device with a trench gate
- Patent number 11,888,032
- Issue date Jan 30, 2024
- Infineon Technologies AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide device with compensation region and method of manuf...
- Patent number 11,764,063
- Issue date Sep 19, 2023
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power transistor with integrated Schottky diode
- Patent number 11,757,031
- Issue date Sep 12, 2023
- Infineon Technologies AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide field-effect transistor including shielding areas
- Patent number 11,626,477
- Issue date Apr 11, 2023
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor switch having a cross-trench structure
- Patent number 11,610,986
- Issue date Mar 21, 2023
- Infineon Technologies AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a transistor with one or more barrie...
- Patent number 11,610,976
- Issue date Mar 21, 2023
- Infineon Technologies Austria AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component having a SiC semiconductor body
- Patent number 11,600,701
- Issue date Mar 7, 2023
- Infineon Technologies AG
- Andreas Peter Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT with dV/dt controllability
- Patent number 11,581,428
- Issue date Feb 14, 2023
- Infineon Technologies AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor switch having a cross-trench structure
- Patent number 11,581,429
- Issue date Feb 14, 2023
- Infineon Technologies AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide device with compensation layer and method of manufa...
- Patent number 11,552,172
- Issue date Jan 10, 2023
- Infineon Technologies AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide device with trench gate
- Patent number 11,552,173
- Issue date Jan 10, 2023
- Infineon Technologies AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including current spread region
- Patent number 11,552,170
- Issue date Jan 10, 2023
- Infineon Technologies AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC device with channel regions extending along at least one of the...
- Patent number 11,462,611
- Issue date Oct 4, 2022
- Infineon Technologies AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Failure structure in semiconductor device
- Patent number 11,404,370
- Issue date Aug 2, 2022
- Infineon Technologies AG
- Thomas Basler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide device with Schottky contact
- Patent number 11,380,756
- Issue date Jul 5, 2022
- Infineon Technologies AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shielding structure for SiC devices
- Patent number 11,367,775
- Issue date Jun 21, 2022
- Infineon Technologies AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including junction material in a trench and ma...
- Patent number 11,322,596
- Issue date May 3, 2022
- Infineon Technologies AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including trench structure and manufacturing m...
- Patent number 11,276,754
- Issue date Mar 15, 2022
- Infineon Technologies AG
- Thomas Basler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing silicon carbide semiconductor devices
- Patent number 11,177,354
- Issue date Nov 16, 2021
- Infineon Technologies AG
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including trench structures and manufacturing...
- Patent number 11,121,220
- Issue date Sep 14, 2021
- Infineon Technologies AG
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide field-effect transistor including shielding areas
- Patent number 11,101,343
- Issue date Aug 24, 2021
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having a cross-trench arrangement
- Patent number 11,075,290
- Issue date Jul 27, 2021
- Infineon Technologies AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor switch with improved controllability
- Patent number 11,011,629
- Issue date May 18, 2021
- Infineon Technologies Dresden GmbH & Co. KG
- Markus Beninger-Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component having a SiC semiconductor body and method...
- Patent number 11,011,606
- Issue date May 18, 2021
- Infineon Technologies AG
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC power semiconductor device with integrated Schottky junction
- Patent number 10,985,248
- Issue date Apr 20, 2021
- Infineon Technologies AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING ION IMPLAN...
- Publication number 20250014902
- Publication date Jan 9, 2025
- INFINEON TECHNOLOGIES AG
- Axel König
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having a Field Termination Structure and a Cha...
- Publication number 20240194778
- Publication date Jun 13, 2024
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION BEAM IMPLANTATION METHOD AND SEMICONDUCTOR DEVICE
- Publication number 20240145247
- Publication date May 2, 2024
- INFINEON TECHNOLOGIES AG
- Moriz JELINEK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE DEVICE WITH A STRIPE-SHAPED TRENCH GATE STRUCTURE
- Publication number 20240136406
- Publication date Apr 25, 2024
- INFINEON TECHNOLOGIES AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR D...
- Publication number 20240072122
- Publication date Feb 29, 2024
- INFINEON TECHNOLOGIES AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A TRANSISTOR WITH TRENCHES AND MESAS
- Publication number 20230197828
- Publication date Jun 22, 2023
- Infineon Technologies Austria AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Shielding Structure for Silicon Carbide Devices
- Publication number 20230163174
- Publication date May 25, 2023
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A TRENCH GATE STRUCTURE
- Publication number 20230163167
- Publication date May 25, 2023
- INFINEON TECHNOLOGIES AG
- Michael HELL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Component Having A SiC Semiconductor Body
- Publication number 20230148156
- Publication date May 11, 2023
- Andreas Peter Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PRODUCING A SILICON CARBIDE DEVICE WITH A TRENCH GATE
- Publication number 20230094032
- Publication date Mar 30, 2023
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING CURRENT SPREAD REGION
- Publication number 20230101290
- Publication date Mar 30, 2023
- INFINEON TECHNOLOGIES AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230083106
- Publication date Mar 16, 2023
- INFINEON TECHNOLOGIES AG
- Moriz JELINEK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE AND METHOD FOR PRODUCING THEREOF
- Publication number 20230049364
- Publication date Feb 16, 2023
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Shielding Structure for SiC Devices
- Publication number 20220199765
- Publication date Jun 23, 2022
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC Devices with Shielding Structure
- Publication number 20220199766
- Publication date Jun 23, 2022
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Including Trench Structure and Manufacturing M...
- Publication number 20220149156
- Publication date May 12, 2022
- INFINEON TECHNOLOGIES AG
- Thomas Basler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER TRANSISTOR WITH INTEGRATED SCHOTTKY DIODE
- Publication number 20220059687
- Publication date Feb 24, 2022
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing Silicon Carbide Semiconductor Devices
- Publication number 20220028980
- Publication date Jan 27, 2022
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Semiconductor Component
- Publication number 20210343835
- Publication date Nov 4, 2021
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Switch Having a Cross-Trench Structure
- Publication number 20210313460
- Publication date Oct 7, 2021
- INFINEON TECHNOLOGIES AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR COMPONENT HAVING A SIC SEMICONDUCTOR BODY
- Publication number 20210226015
- Publication date Jul 22, 2021
- Andreas Peter Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION BEAM IMPLANTATION METHOD AND SEMICONDUCTOR DEVICE
- Publication number 20210193435
- Publication date Jun 24, 2021
- INFINEON TECHNOLOGIES AG
- Moriz JELINEK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FAILURE STRUCTURE IN SEMICONDUCTOR DEVICE
- Publication number 20210159172
- Publication date May 27, 2021
- INFINEON TECHNOLOGIES AG
- Thomas BASLER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A TRANSISTOR WITH ONE OR MORE BARRIE...
- Publication number 20210134977
- Publication date May 6, 2021
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC Device with Channel Regions Extending Along at least one of the...
- Publication number 20210118986
- Publication date Apr 22, 2021
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Device with an Implantation Tail Compensation Region
- Publication number 20210104605
- Publication date Apr 8, 2021
- INFINEON TECHNOLOGIES AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING CURRENT SPREAD REGION
- Publication number 20210091184
- Publication date Mar 25, 2021
- INFINEON TECHNOLOGIES AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Device with Trench Gate
- Publication number 20210050421
- Publication date Feb 18, 2021
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT with dV/dt Controllability
- Publication number 20210043759
- Publication date Feb 11, 2021
- INFINEON TECHNOLOGIES AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Device with Compensation Layer and Method of Manufa...
- Publication number 20210013310
- Publication date Jan 14, 2021
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS

Caspar Leendertz

Person

Patents Grantslast 30 patents

Semiconductor device including current spread region

SiC devices with shielding structure

Semiconductor device fabricated using channeling implant

Semiconductor device including trench structure and manufacturing m...

Ion beam implantation method and semiconductor device

Method of producing a silicon carbide device with a trench gate

Silicon carbide device with compensation region and method of manuf...

Power transistor with integrated Schottky diode

Silicon carbide field-effect transistor including shielding areas

Power semiconductor switch having a cross-trench structure

Semiconductor device including a transistor with one or more barrie...

Semiconductor component having a SiC semiconductor body

IGBT with dV/dt controllability

Power semiconductor switch having a cross-trench structure

Silicon carbide device with compensation layer and method of manufa...

Silicon carbide device with trench gate

Semiconductor device including current spread region

SiC device with channel regions extending along at least one of the...

Failure structure in semiconductor device

Silicon carbide device with Schottky contact

Shielding structure for SiC devices

Semiconductor device including junction material in a trench and ma...

Semiconductor device including trench structure and manufacturing m...

Method of manufacturing silicon carbide semiconductor devices

Semiconductor device including trench structures and manufacturing...

Silicon carbide field-effect transistor including shielding areas

Power semiconductor device having a cross-trench arrangement

Power semiconductor switch with improved controllability

Semiconductor component having a SiC semiconductor body and method...

SiC power semiconductor device with integrated Schottky junction

Patents Applicationslast 30 patents

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING ION IMPLAN...

Semiconductor Device Having a Field Termination Structure and a Cha...

ION BEAM IMPLANTATION METHOD AND SEMICONDUCTOR DEVICE

SILICON CARBIDE DEVICE WITH A STRIPE-SHAPED TRENCH GATE STRUCTURE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR D...

SEMICONDUCTOR DEVICE HAVING A TRANSISTOR WITH TRENCHES AND MESAS

Shielding Structure for Silicon Carbide Devices

SEMICONDUCTOR DEVICE INCLUDING A TRENCH GATE STRUCTURE

Semiconductor Component Having A SiC Semiconductor Body

METHOD OF PRODUCING A SILICON CARBIDE DEVICE WITH A TRENCH GATE

SEMICONDUCTOR DEVICE INCLUDING CURRENT SPREAD REGION

SEMICONDUCTOR DEVICE

TRANSISTOR DEVICE AND METHOD FOR PRODUCING THEREOF

Shielding Structure for SiC Devices

SiC Devices with Shielding Structure

Semiconductor Device Including Trench Structure and Manufacturing M...

POWER TRANSISTOR WITH INTEGRATED SCHOTTKY DIODE

Method of Manufacturing Silicon Carbide Semiconductor Devices

Silicon Carbide Semiconductor Component

Power Semiconductor Switch Having a Cross-Trench Structure

SEMICONDUCTOR COMPONENT HAVING A SIC SEMICONDUCTOR BODY

ION BEAM IMPLANTATION METHOD AND SEMICONDUCTOR DEVICE

FAILURE STRUCTURE IN SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE INCLUDING A TRANSISTOR WITH ONE OR MORE BARRIE...

SiC Device with Channel Regions Extending Along at least one of the...

Silicon Carbide Device with an Implantation Tail Compensation Region

SEMICONDUCTOR DEVICE INCLUDING CURRENT SPREAD REGION

Silicon Carbide Device with Trench Gate

IGBT with dV/dt Controllability

Silicon Carbide Device with Compensation Layer and Method of Manufa...