Cedric Ouvrard

Person

Villach, AT

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device having a transistor cell region and a terminat...
- Patent number 11,462,620
- Issue date Oct 4, 2022
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Needle cell trench MOSFET
- Patent number 10,879,363
- Issue date Dec 29, 2020
- Infineon Technologies Austria AG
- Oliver Blank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with needle-shaped field plate structures
- Patent number 10,872,957
- Issue date Dec 22, 2020
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an edge termination area with trench el...
- Patent number 10,868,173
- Issue date Dec 15, 2020
- Infineon Technologies Austria AG
- Cedric Ouvrard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device with gate resistor
- Patent number 10,811,531
- Issue date Oct 20, 2020
- Infineon Technologies Austria AG
- David Laforet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a reduced surface doping in an edge ter...
- Patent number 10,727,331
- Issue date Jul 28, 2020
- Infineon Technologies Austria AG
- Cedric Ouvrard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having different gate crossings, and met...
- Patent number 10,629,595
- Issue date Apr 21, 2020
- Infineon Technologies Austria AG
- Cedric Ouvrard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor transistor and method for forming the semiconductor t...
- Patent number 10,573,731
- Issue date Feb 25, 2020
- Infineon Technologies Austria AG
- Li Juin Yip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with needle-shaped field plate structures in a...
- Patent number 10,510,846
- Issue date Dec 17, 2019
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of manufacturing a power MOSFET
- Patent number 10,453,929
- Issue date Oct 22, 2019
- Infineon Technologies Austria AG
- David Laforet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a trench gate
- Patent number 10,269,953
- Issue date Apr 23, 2019
- Infineon Technologies Austria AG
- David Laforet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced gate charge field-effect transistor
- Patent number 10,205,015
- Issue date Feb 12, 2019
- Infineon Technologies Austria AG
- David Laforet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with needle-shaped field plates and a gate str...
- Patent number 10,050,113
- Issue date Aug 14, 2018
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device with trench gate by...
- Patent number 9,865,726
- Issue date Jan 9, 2018
- Infineon Technologies Austria AG
- David Laforet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with field electrode and contact structure
- Patent number 9,799,738
- Issue date Oct 24, 2017
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced gate charge field-effect transistor
- Patent number 9,755,066
- Issue date Sep 5, 2017
- Infineon Technologies Austria AG
- David Laforet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
JFET and method of manufacturing thereof
- Patent number 9,711,660
- Issue date Jul 18, 2017
- Infineon Technologies AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOSFET with seperate gate and field plate trenches
- Patent number 9,680,004
- Issue date Jun 13, 2017
- Infineon Technologies Austria AG
- David Laforet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a vertical junction field effect transistor
- Patent number 9,666,696
- Issue date May 30, 2017
- Infineon Technologes Austria AG
- Romain Esteve
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction field effect transistor with vertical PN junction
- Patent number 9,276,135
- Issue date Mar 1, 2016
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical JFET with body diode and device regions disposed in a sing...
- Patent number 9,209,318
- Issue date Dec 8, 2015
- Infineon Technologies Austria AG
- Romain Esteve
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, junction field effect transistor and vertical...
- Patent number 9,029,974
- Issue date May 12, 2015
- Infineon Technologies AG
- Romain Esteve
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced charge transistor
- Patent number 8,946,787
- Issue date Feb 3, 2015
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE HAVING NEEDLE-SHAPED FIRST FIELD PLATE STRUCTU...
- Publication number 20220376062
- Publication date Nov 24, 2022
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A TRANSISTOR CELL REGION AND A TERMINAT...
- Publication number 20210066459
- Publication date Mar 4, 2021
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING AN EDGE TERMINATION AREA WITH TRENCH EL...
- Publication number 20200328303
- Publication date Oct 15, 2020
- Cedric Ouvrard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Needle-Shaped Field Plate Structures
- Publication number 20200127102
- Publication date Apr 23, 2020
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Needle Cell Trench MOSFET
- Publication number 20190305092
- Publication date Oct 3, 2019
- Oliver Blank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor Device with Gate Resistor
- Publication number 20190267487
- Publication date Aug 29, 2019
- David Laforet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device Having Different Gate Crossings, and Met...
- Publication number 20190006357
- Publication date Jan 3, 2019
- Infineon Technologies Austria AG
- Cedric Ouvrard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having a Reduced Surface Doping in an Edge Ter...
- Publication number 20190006513
- Publication date Jan 3, 2019
- Infineon Technologies Austria AG
- Cedric Ouvrard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having a Trench Gate
- Publication number 20180122934
- Publication date May 3, 2018
- Infineon Technologies Austria AG
- David Laforet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reduced Gate Charge Field-Effect Transistor
- Publication number 20170345924
- Publication date Nov 30, 2017
- Infineon Technologies Austria AG
- David Laforet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Transistor and Method for Forming the Semiconductor T...
- Publication number 20170271491
- Publication date Sep 21, 2017
- Infineon Technologies Austria AG
- Li Juin Yip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Needle-Shaped Field Plate Structures in a...
- Publication number 20170250255
- Publication date Aug 31, 2017
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Needle-Shaped Field Plates and a Gate Str...
- Publication number 20170250256
- Publication date Aug 31, 2017
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Manufacturing a Power MOSFET
- Publication number 20170236910
- Publication date Aug 17, 2017
- Infineon Technologies Austria AG
- David Laforet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device
- Publication number 20170154965
- Publication date Jun 1, 2017
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reduced Gate Charge Field-Effect Transistor
- Publication number 20170154993
- Publication date Jun 1, 2017
- Infineon Technologies Austria AG
- David Laforet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Semiconductor Device with Trench Gate by...
- Publication number 20170110573
- Publication date Apr 20, 2017
- Infineon Technologies Austria AG
- David Laforet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Needle Field Plate MOSFET with Mesa Contacts and Conductive Posts
- Publication number 20170077227
- Publication date Mar 16, 2017
- Infineon Technologies Austria AG
- David Laforet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Vertical Junction Field Effect Transistor
- Publication number 20160064534
- Publication date Mar 3, 2016
- Infineon Technologes Austria AG
- Romain Esteve
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Field Electrode and Contact Structure
- Publication number 20160064496
- Publication date Mar 3, 2016
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power MOSFET and Method of Manufacturing a Power MOSFET
- Publication number 20160020319
- Publication date Jan 21, 2016
- Infineon Technologies Austria AG
- David Laforet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JFET AND METHOD OF MANUFACTURING THEREOF
- Publication number 20150263178
- Publication date Sep 17, 2015
- INFINEON TECHNOLOGIES AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Junction Field Effect Transistor with Vertical PN Junction
- Publication number 20150076568
- Publication date Mar 19, 2015
- INFINEON TECHNOLOGIES AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, JUNCTION FIELD EFFECT TRANSISTOR AND VERTICAL...
- Publication number 20150069411
- Publication date Mar 12, 2015
- INFINEON TECHNOLOGIES AG
- Romain Esteve
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical JFET with Integrated Body Diode
- Publication number 20140231883
- Publication date Aug 21, 2014
- Infineon Technologies Austria AG
- Romain Esteve
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED CHARGE TRANSISTOR
- Publication number 20140097478
- Publication date Apr 10, 2014
- Infineon Technologies Austria AG
- Ralf SIEMIENIEC
- H01 - BASIC ELECTRIC ELEMENTS

Cedric Ouvrard

Person

Patents Grantslast 30 patents

Semiconductor device having a transistor cell region and a terminat...

Needle cell trench MOSFET

Semiconductor device with needle-shaped field plate structures

Semiconductor device having an edge termination area with trench el...

Transistor device with gate resistor

Semiconductor device having a reduced surface doping in an edge ter...

Power semiconductor device having different gate crossings, and met...

Semiconductor transistor and method for forming the semiconductor t...

Semiconductor device with needle-shaped field plate structures in a...

Methods of manufacturing a power MOSFET

Semiconductor device having a trench gate

Reduced gate charge field-effect transistor

Semiconductor device with needle-shaped field plates and a gate str...

Method of manufacturing a semiconductor device with trench gate by...

Semiconductor device with field electrode and contact structure

Reduced gate charge field-effect transistor

JFET and method of manufacturing thereof

Power MOSFET with seperate gate and field plate trenches

Method of manufacturing a vertical junction field effect transistor

Junction field effect transistor with vertical PN junction

Vertical JFET with body diode and device regions disposed in a sing...

Semiconductor device, junction field effect transistor and vertical...

Reduced charge transistor

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE HAVING NEEDLE-SHAPED FIRST FIELD PLATE STRUCTU...

SEMICONDUCTOR DEVICE HAVING A TRANSISTOR CELL REGION AND A TERMINAT...

SEMICONDUCTOR DEVICE HAVING AN EDGE TERMINATION AREA WITH TRENCH EL...

Semiconductor Device with Needle-Shaped Field Plate Structures

Needle Cell Trench MOSFET

Transistor Device with Gate Resistor

Power Semiconductor Device Having Different Gate Crossings, and Met...

Semiconductor Device Having a Reduced Surface Doping in an Edge Ter...

Semiconductor Device Having a Trench Gate

Reduced Gate Charge Field-Effect Transistor

Semiconductor Transistor and Method for Forming the Semiconductor T...

Semiconductor Device with Needle-Shaped Field Plate Structures in a...

Semiconductor Device with Needle-Shaped Field Plates and a Gate Str...

Methods of Manufacturing a Power MOSFET

Semiconductor Device

Reduced Gate Charge Field-Effect Transistor

Method of Manufacturing a Semiconductor Device with Trench Gate by...

Needle Field Plate MOSFET with Mesa Contacts and Conductive Posts

Method of Manufacturing a Vertical Junction Field Effect Transistor

Semiconductor Device with Field Electrode and Contact Structure

Power MOSFET and Method of Manufacturing a Power MOSFET

JFET AND METHOD OF MANUFACTURING THEREOF

Junction Field Effect Transistor with Vertical PN Junction

SEMICONDUCTOR DEVICE, JUNCTION FIELD EFFECT TRANSISTOR AND VERTICAL...

Vertical JFET with Integrated Body Diode

REDUCED CHARGE TRANSISTOR