Chai-Hong Jan

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Portland, OR, US

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Patents Grantslast 30 patents

Information Patent Grant
Two step source/drain anneal to prevent dopant evaporation
- Patent number 5,874,344
- Issue date Feb 23, 1999
- Intel Corporation
- Scott E. Thompson
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PENETRATING IMPLANT FOR FORMING A SEMICONDUCTOR DEVICE
- Publication number 20130224926
- Publication date Aug 29, 2013
- Giuseppe Curello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective spacer formation on transistors of different classes on t...
- Publication number 20080003746
- Publication date Jan 3, 2008
- Giuseppe Curello
- H01 - BASIC ELECTRIC ELEMENTS