Chan-Syun Yang

Person

Beverly Hills, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of controlling trench microloading using plasma pulsing
- Patent number 8,658,541
- Issue date Feb 25, 2014
- Applied Materials, Inc.
- Gene H. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hydrogen ashing enhanced with water vapor and diluent gas
- Patent number 7,807,579
- Issue date Oct 5, 2010
- Applied Materials, Inc.
- Chan-Syun Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating an interconnect line
- Patent number 6,767,821
- Issue date Jul 27, 2004
- Chan-syun David Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of etching a trench in a silicon-on-insulator (SOI) structure
- Patent number 6,759,340
- Issue date Jul 6, 2004
- Padmapani C. Nallan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a notched silicon-containing gate structure
- Patent number 6,551,941
- Issue date Apr 22, 2003
- Applied Materials, Inc.
- Chan-syun David Yang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF CONTROLLING TRENCH MICROLOADING USING PLASMA PULSING
- Publication number 20140179109
- Publication date Jun 26, 2014
- Applied Materials, Inc.
- GENE H. LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF CONTROLLING TRENCH MICROLOADING USING PLASMA PULSING
- Publication number 20110177669
- Publication date Jul 21, 2011
- Applied Materials, Inc.
- GENE H. LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYDROGEN ASHING ENHANCED WITH WATER VAPOR AND DILUENT GAS
- Publication number 20080261405
- Publication date Oct 23, 2008
- Applied Materials, Inc.
- Chan-Syun Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for laterally etching a semiconductor structure
- Publication number 20040077178
- Publication date Apr 22, 2004
- APPLIED MATERIALS, INC.
- Chan-Syun Yang
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
Method for controlling the extent of notch or undercut in an etched...
- Publication number 20040018647
- Publication date Jan 29, 2004
- APPLIED MATERIALS, INC.
- Steven J. Jones
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of etching a trench in a silicon-on-insulator (SOI) structure
- Publication number 20030211753
- Publication date Nov 13, 2003
- Padmapani C. Nallan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A NOTCHED SILICON-CONTAINING GATE STRUCTURE
- Publication number 20020151183
- Publication date Oct 17, 2002
- Chan-syun David Yang
- H01 - BASIC ELECTRIC ELEMENTS

Chan-Syun Yang

Person

Patents Grantslast 30 patents

Method of controlling trench microloading using plasma pulsing

Hydrogen ashing enhanced with water vapor and diluent gas

Method for fabricating an interconnect line

Method of etching a trench in a silicon-on-insulator (SOI) structure

Method of forming a notched silicon-containing gate structure

Patents Applicationslast 30 patents

METHOD OF CONTROLLING TRENCH MICROLOADING USING PLASMA PULSING

METHOD OF CONTROLLING TRENCH MICROLOADING USING PLASMA PULSING

HYDROGEN ASHING ENHANCED WITH WATER VAPOR AND DILUENT GAS

Method for laterally etching a semiconductor structure

Method for controlling the extent of notch or undercut in an etched...

Method of etching a trench in a silicon-on-insulator (SOI) structure

METHOD OF FORMING A NOTCHED SILICON-CONTAINING GATE STRUCTURE