CHANDO PARK

Person

PALO ALTO, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Spin-orbit torque MRAM structure and manufacture thereof
- Patent number 12,201,030
- Issue date Jan 14, 2025
- Applied Materials, Inc.
- Minrui Yu
- G01 - MEASURING TESTING
Information Patent Grant
Magnetic memory devices and methods of formation
- Patent number 12,075,628
- Issue date Aug 27, 2024
- Applied Materials, Inc.
- Lin Xue
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods for forming structures for MRAM applications
- Patent number 11,818,959
- Issue date Nov 14, 2023
- Applied Materials, Inc.
- Hsin-wei Tseng
Information Patent Grant
Spin-orbit torque MRAM structure and manufacture thereof
- Patent number 11,723,283
- Issue date Aug 8, 2023
- Applied Materials, Inc.
- Minrui Yu
- G11 - INFORMATION STORAGE
Information Patent Grant
Top buffer layer for magnetic tunnel junction application
- Patent number 11,621,393
- Issue date Apr 4, 2023
- Applied Materials, Inc.
- Lin Xue
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junctions with protection layers
- Patent number 11,522,126
- Issue date Dec 6, 2022
- Applied Materials, Inc.
- Lin Xue
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods for etching a structure for MRAM applications
- Patent number 11,145,808
- Issue date Oct 12, 2021
- Applied Materials, Inc.
- Jong Mun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming structures for MRAM applications
- Patent number 11,069,853
- Issue date Jul 20, 2021
- Applied Materials, Inc.
- Hsin-wei Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Top buffer layer for magnetic tunnel junction application
- Patent number 10,923,652
- Issue date Feb 16, 2021
- Applied Materials, Inc.
- Lin Xue
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Engineered barrier layer interface for high speed spin-transfer tor...
- Patent number 10,833,254
- Issue date Nov 10, 2020
- QUALCOMM Incorporated
- Chando Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin orbit torque MRAM and manufacture thereof
- Patent number 10,756,259
- Issue date Aug 25, 2020
- Applied Materials, Inc.
- Jaesoo Ahn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dynamic memory protection
- Patent number 10,740,017
- Issue date Aug 11, 2020
- QUALCOMM Incorporated
- Chando Park
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Spin-orbit torque (SOT) magnetic tunnel junction (MTJ) (SOT-MTJ) de...
- Patent number 10,636,962
- Issue date Apr 28, 2020
- QUALCOMM Incorporated
- Chando Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Message-based key generation using physical unclonable function (PUF)
- Patent number 10,547,460
- Issue date Jan 28, 2020
- QUALCOMM Incorporated
- Peiyuan Wang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Differential spin orbit torque magnetic random access memory (SOT-M...
- Patent number 10,483,457
- Issue date Nov 19, 2019
- QUALCOMM Incorporated
- Hochul Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Parallel write scheme utilizing spin hall effect-assisted spin tran...
- Patent number 10,460,785
- Issue date Oct 29, 2019
- QUALCOMM Incorporated
- Hochul Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magneto-resistive random access memory (MRAM) employing an integrat...
- Patent number 10,460,780
- Issue date Oct 29, 2019
- QUALCOMM Incorporated
- Sungryul Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Engineered barrier layer interface for high speed spin-transfer tor...
- Patent number 10,431,734
- Issue date Oct 1, 2019
- QUALCOMM Incorporated
- Chando Park
- G11 - INFORMATION STORAGE
Information Patent Grant
High-speed, low power spin-orbit torque (SOT) assisted spin-transfe...
- Patent number 10,381,060
- Issue date Aug 13, 2019
- QUALCOMM Incorporated
- Jimmy Jianan Kan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
One-time programming (OTP) magneto-resistive random access memory (...
- Patent number 10,311,930
- Issue date Jun 4, 2019
- QUALCOMM Incorporated
- Sungryul Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Dynamic memory protection
- Patent number 10,249,814
- Issue date Apr 2, 2019
- QUALCOMM Incorporated
- Chando Park
- G01 - MEASURING TESTING
Information Patent Grant
Magnetic tunnel junction (MTJ) devices with heterogeneous free laye...
- Patent number 10,134,808
- Issue date Nov 20, 2018
- QUALCOMM Incorporated
- Jimmy Jianan Kan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultrathin perpendicular pinned layer structure for magnetic tunneli...
- Patent number 10,103,319
- Issue date Oct 16, 2018
- QUALCOMM Incorporated
- Kangho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing or avoiding metal deposition from etching magnetic tunnel...
- Patent number 10,096,649
- Issue date Oct 9, 2018
- QUALCOMM Incorporated
- Chando Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-compensation of stray field of perpendicular magnetic elements
- Patent number 10,043,967
- Issue date Aug 7, 2018
- QUALCOMM Incorporated
- Wei-Chuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Physically unclonable function based on comparison of MTJ resistances
- Patent number 9,870,811
- Issue date Jan 16, 2018
- QUALCOMM Incorporated
- Peiyuan Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
System and method to generate a random number
- Patent number 9,824,735
- Issue date Nov 21, 2017
- QUALCOMM Incorporated
- Jimmy Jianan Kan
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction (MTJ) device array
- Patent number 9,728,718
- Issue date Aug 8, 2017
- QUALCOMM Incorporated
- Vladimir Machkaoutsan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Decoupling of source line layout from access transistor contact pla...
- Patent number 9,721,634
- Issue date Aug 1, 2017
- QUALCOMM Incorporated
- Xiaochun Zhu
- G11 - INFORMATION STORAGE
Information Patent Grant
Shadow-effect compensated fabrication of magnetic tunnel junction (...
- Patent number 9,666,792
- Issue date May 30, 2017
- QUALCOMM Incorporated
- Wei-Chuan Chen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SPIN-ORBIT TORQUE MRAM STRUCTURE AND MANUFACTURE THEREOF
- Publication number 20230389441
- Publication date Nov 30, 2023
- Applied Materials, Inc.
- Minrui YU
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY DEVICES AND METHODS OF FORMATION
- Publication number 20220115439
- Publication date Apr 14, 2022
- Applied Materials, Inc.
- Lin XUE
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN-ORBIT TORQUE MRAM STRUCTURE AND MANUFACTURE THEREOF
- Publication number 20210351342
- Publication date Nov 11, 2021
- Applied Materials, Inc.
- Minrui YUI
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS FOR FORMING STRUCTURES FOR MRAM APPLICATIONS
- Publication number 20210351344
- Publication date Nov 11, 2021
- Applied Materials, Inc.
- Hsin-wei TSENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for etching a structure for MRAM Applications
- Publication number 20210143323
- Publication date May 13, 2021
- Applied Materials, Inc.
- Jong Mun KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TOP BUFFER LAYER FOR MAGNETIC TUNNEL JUNCTION APPLICATION
- Publication number 20210119119
- Publication date Apr 22, 2021
- Applied Materials, Inc.
- Lin XUE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTIONS WITH PROTECTION LAYERS
- Publication number 20210111338
- Publication date Apr 15, 2021
- Applied Materials, Inc.
- Lin XUE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TOP BUFFER LAYER FOR MAGNETIC TUNNEL JUNCTION APPLICATION
- Publication number 20200403152
- Publication date Dec 24, 2020
- Applied Materials, Inc.
- Lin XUE
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SPIN ORBIT TORQUE MRAM AND MANUFACTURE THEREOF
- Publication number 20200161542
- Publication date May 21, 2020
- Applied Materials, Inc.
- Jaesoo AHN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING STRUCTURES FOR MRAM APPLICATIONS
- Publication number 20200161541
- Publication date May 21, 2020
- Applied Materials, Inc.
- Hsin-wei TSENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN-ORBIT TORQUE (SOT) MAGNETIC TUNNEL JUNCTION (MTJ) (SOT-MTJ) DE...
- Publication number 20200066968
- Publication date Feb 27, 2020
- QUALCOMM Incorporated
- Chando Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DYNAMIC MEMORY PROTECTION
- Publication number 20190332306
- Publication date Oct 31, 2019
- QUALCOMM Incorporated
- Chando PARK
- A61 - MEDICAL OR VETERINARY SCIENCE HYGIENE
Information Patent Application
MAGNETO-RESISTIVE RANDOM ACCESS MEMORY (MRAM) EMPLOYING AN INTEGRAT...
- Publication number 20190304527
- Publication date Oct 3, 2019
- QUALCOMM Incorporated
- Sungryul Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENGINEERED BARRIER LAYER INTERFACE FOR HIGH SPEED SPIN-TRANSFER TOR...
- Publication number 20190288187
- Publication date Sep 19, 2019
- QUALCOMM Incorporated
- Chando PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETO-IMPEDANCE (MI) SENSORS EMPLOYING CURRENT CONFINEMENT AND EX...
- Publication number 20180266991
- Publication date Sep 20, 2018
- QUALCOMM Incorporated
- Jimmy Jianan Kan
- G01 - MEASURING TESTING
Information Patent Application
ENGINEERED BARRIER LAYER INTERFACE FOR HIGH SPEED SPIN-TRANSFER TOR...
- Publication number 20180212142
- Publication date Jul 26, 2018
- QUALCOMM Incorporated
- Chando Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MESSAGE-BASED KEY GENERATION USING PHYSICAL UNCLONABLE FUNCTION (PUF)
- Publication number 20180145838
- Publication date May 24, 2018
- QUALCOMM Incorporated
- Peiyuan Wang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
HIGH SPEED, LOW POWER SPIN-ORBIT TORQUE (SOT) ASSISTED SPIN-TRANSFE...
- Publication number 20180061467
- Publication date Mar 1, 2018
- QUALCOMM Incorporated
- Jimmy Jianan KAN
- G11 - INFORMATION STORAGE
Information Patent Application
REDUCING OR AVOIDING METAL DEPOSITION FROM ETCHING MAGNETIC TUNNEL...
- Publication number 20180040668
- Publication date Feb 8, 2018
- QUALCOMM Incorporated
- Chando Park
- G11 - INFORMATION STORAGE
Information Patent Application
PHYSICALLY UNCLONABLE FUNCTION BASED ON COMPARISON OF MTJ RESISTANCES
- Publication number 20170365316
- Publication date Dec 21, 2017
- QUALCOMM Incorporated
- Peiyuan Wang
- G11 - INFORMATION STORAGE
Information Patent Application
ULTRATHIN PERPENDICULAR PINNED LAYER STRUCTURE FOR MAGNETIC TUNNELI...
- Publication number 20170186942
- Publication date Jun 29, 2017
- QUALCOMM Incorporated
- Kangho LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION (MTJ) DEVICES WITH HETEROGENEOUS FREE LAYE...
- Publication number 20170125481
- Publication date May 4, 2017
- QUALCOMM Incorporated
- Jimmy Jianan Kan
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION (MTJ) DEVICE ARRAY
- Publication number 20170104153
- Publication date Apr 13, 2017
- QUALCOMM Incorporated
- Vladimir Machkaoutsan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION (MTJ) DEVICES PARTICULARLY SUITED FOR EFFI...
- Publication number 20170077387
- Publication date Mar 16, 2017
- QUALCOMM Incorporated
- Jimmy Jianan Kan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC FIELD ENHANCING BACKING PLATE FOR MRAM WAFER TESTING
- Publication number 20170059669
- Publication date Mar 2, 2017
- QUALCOMM Incorporated
- Jimmy Kan
- G01 - MEASURING TESTING
Information Patent Application
SHADOW-EFFECT COMPENSATED FABRICATION OF MAGNETIC TUNNEL JUNCTION (...
- Publication number 20170047510
- Publication date Feb 16, 2017
- QUALCOMM Incorporated
- Wei-Chuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DECOUPLING OF SOURCE LINE LAYOUT FROM ACCESS TRANSISTOR CONTACT PLA...
- Publication number 20160315248
- Publication date Oct 27, 2016
- QUALCOMM Incorporated
- Xiaochun Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SMOOTH SEED LAYERS WITH UNIFORM CRYSTALLINE TEXTURE FOR HIGH PERPEN...
- Publication number 20160284988
- Publication date Sep 29, 2016
- QUALCOMM Incorporated
- Matthias Georg GOTTWALD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID SYNTHETIC ANTIFERROMAGNETIC LAYER FOR PERPENDICULAR MAGNETIC...
- Publication number 20160276581
- Publication date Sep 22, 2016
- QUALCOMM Incorporated
- Chando PARK
- G11 - INFORMATION STORAGE
Information Patent Application
SYNTHETIC ANTIFERROMAGNET (SAF) COUPLED FREE LAYER FOR PERPENDICULA...
- Publication number 20160233418
- Publication date Aug 11, 2016
- QUALCOMM Incorporated
- Chando PARK
- G11 - INFORMATION STORAGE

CHANDO PARK

Person

Patents Grantslast 30 patents

Spin-orbit torque MRAM structure and manufacture thereof

Magnetic memory devices and methods of formation

Methods for forming structures for MRAM applications

Spin-orbit torque MRAM structure and manufacture thereof

Top buffer layer for magnetic tunnel junction application

Magnetic tunnel junctions with protection layers

Methods for etching a structure for MRAM applications

Methods for forming structures for MRAM applications

Top buffer layer for magnetic tunnel junction application

Engineered barrier layer interface for high speed spin-transfer tor...

Spin orbit torque MRAM and manufacture thereof

Dynamic memory protection

Spin-orbit torque (SOT) magnetic tunnel junction (MTJ) (SOT-MTJ) de...

Message-based key generation using physical unclonable function (PUF)

Differential spin orbit torque magnetic random access memory (SOT-M...

Parallel write scheme utilizing spin hall effect-assisted spin tran...

Magneto-resistive random access memory (MRAM) employing an integrat...

Engineered barrier layer interface for high speed spin-transfer tor...

High-speed, low power spin-orbit torque (SOT) assisted spin-transfe...

One-time programming (OTP) magneto-resistive random access memory (...

Dynamic memory protection

Magnetic tunnel junction (MTJ) devices with heterogeneous free laye...

Ultrathin perpendicular pinned layer structure for magnetic tunneli...

Reducing or avoiding metal deposition from etching magnetic tunnel...

Self-compensation of stray field of perpendicular magnetic elements

Physically unclonable function based on comparison of MTJ resistances

System and method to generate a random number

Magnetic tunnel junction (MTJ) device array

Decoupling of source line layout from access transistor contact pla...

Shadow-effect compensated fabrication of magnetic tunnel junction (...

Patents Applicationslast 30 patents

SPIN-ORBIT TORQUE MRAM STRUCTURE AND MANUFACTURE THEREOF

MAGNETIC MEMORY DEVICES AND METHODS OF FORMATION

SPIN-ORBIT TORQUE MRAM STRUCTURE AND MANUFACTURE THEREOF

METHODS FOR FORMING STRUCTURES FOR MRAM APPLICATIONS

Methods for etching a structure for MRAM Applications

TOP BUFFER LAYER FOR MAGNETIC TUNNEL JUNCTION APPLICATION

MAGNETIC TUNNEL JUNCTIONS WITH PROTECTION LAYERS

TOP BUFFER LAYER FOR MAGNETIC TUNNEL JUNCTION APPLICATION

SPIN ORBIT TORQUE MRAM AND MANUFACTURE THEREOF

METHODS FOR FORMING STRUCTURES FOR MRAM APPLICATIONS

SPIN-ORBIT TORQUE (SOT) MAGNETIC TUNNEL JUNCTION (MTJ) (SOT-MTJ) DE...

DYNAMIC MEMORY PROTECTION

MAGNETO-RESISTIVE RANDOM ACCESS MEMORY (MRAM) EMPLOYING AN INTEGRAT...

ENGINEERED BARRIER LAYER INTERFACE FOR HIGH SPEED SPIN-TRANSFER TOR...

MAGNETO-IMPEDANCE (MI) SENSORS EMPLOYING CURRENT CONFINEMENT AND EX...

ENGINEERED BARRIER LAYER INTERFACE FOR HIGH SPEED SPIN-TRANSFER TOR...

MESSAGE-BASED KEY GENERATION USING PHYSICAL UNCLONABLE FUNCTION (PUF)

HIGH SPEED, LOW POWER SPIN-ORBIT TORQUE (SOT) ASSISTED SPIN-TRANSFE...

REDUCING OR AVOIDING METAL DEPOSITION FROM ETCHING MAGNETIC TUNNEL...

PHYSICALLY UNCLONABLE FUNCTION BASED ON COMPARISON OF MTJ RESISTANCES

ULTRATHIN PERPENDICULAR PINNED LAYER STRUCTURE FOR MAGNETIC TUNNELI...

MAGNETIC TUNNEL JUNCTION (MTJ) DEVICES WITH HETEROGENEOUS FREE LAYE...

MAGNETIC TUNNEL JUNCTION (MTJ) DEVICE ARRAY

MAGNETIC TUNNEL JUNCTION (MTJ) DEVICES PARTICULARLY SUITED FOR EFFI...

MAGNETIC FIELD ENHANCING BACKING PLATE FOR MRAM WAFER TESTING

SHADOW-EFFECT COMPENSATED FABRICATION OF MAGNETIC TUNNEL JUNCTION (...

DECOUPLING OF SOURCE LINE LAYOUT FROM ACCESS TRANSISTOR CONTACT PLA...

SMOOTH SEED LAYERS WITH UNIFORM CRYSTALLINE TEXTURE FOR HIGH PERPEN...

HYBRID SYNTHETIC ANTIFERROMAGNETIC LAYER FOR PERPENDICULAR MAGNETIC...

SYNTHETIC ANTIFERROMAGNET (SAF) COUPLED FREE LAYER FOR PERPENDICULA...