Chandra MOHAPATRA

Person

Beaverton, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Field effect transistors with gate electrode self-aligned to semico...
- Patent number 11,996,447
- Issue date May 28, 2024
- Intel Corporation
- Sean T. Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Indium-containing fin of a transistor device with an indium-rich core
- Patent number 11,764,275
- Issue date Sep 19, 2023
- Intel Corporation
- Chandra S. Mohapatra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming dislocation enhanced strain in NMOS and PMOS str...
- Patent number 11,610,995
- Issue date Mar 21, 2023
- Daedalus Prime LLC
- Michael Jackson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire for transistor integration
- Patent number 11,588,017
- Issue date Feb 21, 2023
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming dislocation enhanced strain in NMOS and PMOS str...
- Patent number 11,482,618
- Issue date Oct 25, 2022
- Daedalus Prime LLC
- Michael Jackson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside source/drain replacement for semiconductor devices with me...
- Patent number 11,444,166
- Issue date Sep 13, 2022
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-mobility semiconductor source/drain spacer
- Patent number 11,417,655
- Issue date Aug 16, 2022
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming dislocation enhanced strain in NMOS and PMOS str...
- Patent number 11,411,110
- Issue date Aug 9, 2022
- Intel Corporation
- Michael Jackson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors with gate electrode self-aligned to semico...
- Patent number 11,276,755
- Issue date Mar 15, 2022
- Intel Corporation
- Sean T. Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimizing gate profile for performance and gate fill
- Patent number 11,205,707
- Issue date Dec 21, 2021
- Intel Corporation
- Nadia M. Rahhal-Orabi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FINFET transistor having a doped subfin structure to reduce channel...
- Patent number 11,107,890
- Issue date Aug 31, 2021
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming dislocation enhanced strain in NMOS structures
- Patent number 11,107,920
- Issue date Aug 31, 2021
- Intel Corporation
- Michael Jackson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etching fin core to provide fin doubling
- Patent number 11,024,737
- Issue date Jun 1, 2021
- Intel Corporation
- Chandra S. Mohapatra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming doped source/drain contacts and structures forme...
- Patent number 11,004,978
- Issue date May 11, 2021
- Intel Corporation
- Glenn Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-mobility field effect transistors with wide bandgap fin cladding
- Patent number 10,957,769
- Issue date Mar 23, 2021
- Intel Corporation
- Sean T. Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Geometry tuning of fin based transistor
- Patent number 10,944,006
- Issue date Mar 9, 2021
- Intel Corporation
- Glenn A. Glass
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device with released source and drain
- Patent number 10,903,364
- Issue date Jan 26, 2021
- Intel Corporation
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside source/drain replacement for semiconductor devices with me...
- Patent number 10,892,337
- Issue date Jan 12, 2021
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-V material transistors employing nitride-based dopant dif...
- Patent number 10,886,408
- Issue date Jan 5, 2021
- Intel Corporation
- Chandra S. Mohapatra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Indium-rich NMOS transistor channels
- Patent number 10,818,793
- Issue date Oct 27, 2020
- Intel Corporation
- Chandra S. Mohapatra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Differential work function between gate stack metals to reduce para...
- Patent number 10,797,150
- Issue date Oct 6, 2020
- Intel Corporation
- Sean T. Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Beaded fin transistor
- Patent number 10,770,593
- Issue date Sep 8, 2020
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for forming transistors including group III-V material n...
- Patent number 10,749,032
- Issue date Aug 18, 2020
- Intel Corporation
- Chandra S. Mohapatra
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Fin-based III-V/SI or GE CMOS SAGE integration
- Patent number 10,748,900
- Issue date Aug 18, 2020
- Intel Corporation
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside contact resistance reduction for semiconductor devices wit...
- Patent number 10,734,412
- Issue date Aug 4, 2020
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pseudomorphic InGaAs on GaAs for gate-all-around transistors
- Patent number 10,651,288
- Issue date May 12, 2020
- Intel Corporation
- Chandra S. Mohapatra
- B82 - NANO-TECHNOLOGY
Information Patent Grant
III-V finfet transistor with V-groove S/D profile for improved acce...
- Patent number 10,644,137
- Issue date May 5, 2020
- Intel Corporation
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FINFET transistor having a tapered subfin structure
- Patent number 10,636,912
- Issue date Apr 28, 2020
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and methods to create an active channel having indium ric...
- Patent number 10,586,848
- Issue date Mar 10, 2020
- Intel Corporation
- Chandra S. Mohapatra
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Transistor with a sub-fin dielectric region under a gate
- Patent number 10,580,865
- Issue date Mar 3, 2020
- Intel Corporation
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHODS OF FORMING DISLOCATION ENHANCED STRAIN IN NMOS AND PMOS STR...
- Publication number 20230197848
- Publication date Jun 22, 2023
- Daedalus Prime LLC
- Michael Jackson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING DISLOCATION ENHANCED STRAIN IN NMOS AND PMOS STR...
- Publication number 20230006063
- Publication date Jan 5, 2023
- Daedalus Prime LLC
- Michael Jackson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING DISLOCATION ENHANCED STRAIN IN NMOS AND PMOS STR...
- Publication number 20220238714
- Publication date Jul 28, 2022
- Intel Corporation
- Michael JACKSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTORS WITH GATE ELECTRODE SELF-ALIGNED TO SEMICO...
- Publication number 20220181442
- Publication date Jun 9, 2022
- Intel Corporation
- Sean T. Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING DISLOCATION ENHANCED STRAIN IN NMOS AND PMOS STR...
- Publication number 20220059699
- Publication date Feb 24, 2022
- Intel Corporation
- Michael JACKSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET TRANSISTOR HAVING A DOPED SUBFIN STRUCTURE TO REDUCE CHANNEL...
- Publication number 20210296180
- Publication date Sep 23, 2021
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE SOURCE/DRAIN REPLACEMENT FOR SEMICONDUCTOR DEVICES WITH ME...
- Publication number 20210074823
- Publication date Mar 11, 2021
- Intel Corporation
- GLENN A. GLASS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTORS WITH GATE ELECTRODE SELF-ALIGNED TO SEMICO...
- Publication number 20200321435
- Publication date Oct 8, 2020
- Intel Corporation
- Sean T. Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-MOBILITY FIELD EFFECT TRANSISTORS WITH WIDE BANDGAP FIN CLADDING
- Publication number 20200321439
- Publication date Oct 8, 2020
- Intel Corporation
- Sean T. Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE FOR TRANSISTOR INTEGRATION
- Publication number 20200303499
- Publication date Sep 24, 2020
- Intel Corporation
- Glenn A. GLASS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING DOPED SOURCE/DRAIN CONTACTS AND STRUCTURES FORME...
- Publication number 20200176601
- Publication date Jun 4, 2020
- Intel Corporation
- Glenn Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AN INDIUM-CONTAINING FIN OF A TRANSISTOR DEVICE WITH AN INDIUM-RICH...
- Publication number 20200066855
- Publication date Feb 27, 2020
- Intel Corporation
- Chandra S. Mohapatra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A FINFET TRANSISTOR HAVING A TAPERED SUBFIN STRUCTURE
- Publication number 20190341481
- Publication date Nov 7, 2019
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING DISLOCATION ENHANCED STRAIN IN NMOS STRUCTURES
- Publication number 20190334034
- Publication date Oct 31, 2019
- Intel Corporation
- Michael JACKSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE SOURCE/DRAIN REPLACEMENT FOR SEMICONDUCTOR DEVICES WITH ME...
- Publication number 20190221649
- Publication date Jul 18, 2019
- Intel Corporation
- GLENN A. GLASS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-V MATERIAL TRANSISTORS EMPLOYING NITRIDE-BASED DOPANT DIF...
- Publication number 20190198658
- Publication date Jun 27, 2019
- Intel Corporation
- Chandra S. Mohapatra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INDIUM-RICH NMOS TRANSISTOR CHANNELS
- Publication number 20190189794
- Publication date Jun 20, 2019
- Intel Corporation
- CHANDRA S. MOHAPATRA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH RELEASED SOURCE AND DRAIN
- Publication number 20190172941
- Publication date Jun 6, 2019
- Intel Corporation
- Willy RACHMADY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE CONTACT RESISTANCE REDUCTION FOR SEMICONDUCTOR DEVICES WIT...
- Publication number 20190157310
- Publication date May 23, 2019
- Intel Corporation
- GLENN A. GLASS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-MOBILITY SEMICONDUCTOR SOURCE/DRAIN SPACER
- Publication number 20190148378
- Publication date May 16, 2019
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V FINFET TRANSISTOR WITH V-GROOVE S/D PROFILE FOR IMPROVED ACCE...
- Publication number 20190148512
- Publication date May 16, 2019
- Intel Corporation
- Willy RACHMADY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A FINFET TRANSISTOR HAVING A DOPED SUBFIN STRUCTURE TO REDUCE CHANN...
- Publication number 20190140054
- Publication date May 9, 2019
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BEADED FIN TRANSISTOR
- Publication number 20190097055
- Publication date Mar 28, 2019
- Intel Corporation
- GILBERT DEWEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES FOR FORMING TRANSISTORS INCLUDING GROUP III-V MATERIAL N...
- Publication number 20190043993
- Publication date Feb 7, 2019
- Intel Corporation
- CHANDRA S. MOHAPATRA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS AND METHODS TO CREATE AN ACTIVE CHANNEL HAVING INDIUM RIC...
- Publication number 20190035889
- Publication date Jan 31, 2019
- Intel Corporation
- Chandra S. MOHAPATRA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPANT DIFFUSION BARRIER FOR SOURCE/DRAIN TO CURB DOPANT ATOM DIFFU...
- Publication number 20190035897
- Publication date Jan 31, 2019
- Intel Corporation
- Chandra S. MOHAPATRA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCHING FIN CORE TO PROVIDE FIN DOUBLING
- Publication number 20190035926
- Publication date Jan 31, 2019
- Intel Corporation
- Chandra S. MOHAPATRA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GEOMETRY TUNING OF FIN BASED TRANSISTOR
- Publication number 20190019891
- Publication date Jan 17, 2019
- Intel Corporation
- Glenn A. GLASS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CRYSTALLIZED SILICON CARBON REPLACEMENT MATERIAL FOR NMOS SOURCE/DR...
- Publication number 20180374951
- Publication date Dec 27, 2018
- Intel Corporation
- KARTHIK JAMBUNATHAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR INCLUDING TENSILE-STRAINED GERMANIUM CHANNEL
- Publication number 20180358440
- Publication date Dec 13, 2018
- Intel Corporation
- CHANDRA S. MOHAPATRA
- H01 - BASIC ELECTRIC ELEMENTS

Chandra MOHAPATRA

Person

Patents Grantslast 30 patents

Field effect transistors with gate electrode self-aligned to semico...

Indium-containing fin of a transistor device with an indium-rich core

Methods of forming dislocation enhanced strain in NMOS and PMOS str...

Nanowire for transistor integration

Methods of forming dislocation enhanced strain in NMOS and PMOS str...

Backside source/drain replacement for semiconductor devices with me...

High-mobility semiconductor source/drain spacer

Methods of forming dislocation enhanced strain in NMOS and PMOS str...

Field effect transistors with gate electrode self-aligned to semico...

Optimizing gate profile for performance and gate fill

FINFET transistor having a doped subfin structure to reduce channel...

Methods of forming dislocation enhanced strain in NMOS structures

Etching fin core to provide fin doubling

Methods of forming doped source/drain contacts and structures forme...

High-mobility field effect transistors with wide bandgap fin cladding

Geometry tuning of fin based transistor

Semiconductor device with released source and drain

Backside source/drain replacement for semiconductor devices with me...

Group III-V material transistors employing nitride-based dopant dif...

Indium-rich NMOS transistor channels

Differential work function between gate stack metals to reduce para...

Beaded fin transistor

Techniques for forming transistors including group III-V material n...

Fin-based III-V/SI or GE CMOS SAGE integration

Backside contact resistance reduction for semiconductor devices wit...

Pseudomorphic InGaAs on GaAs for gate-all-around transistors

III-V finfet transistor with V-groove S/D profile for improved acce...

FINFET transistor having a tapered subfin structure

Apparatus and methods to create an active channel having indium ric...

Transistor with a sub-fin dielectric region under a gate

Patents Applicationslast 30 patents

METHODS OF FORMING DISLOCATION ENHANCED STRAIN IN NMOS AND PMOS STR...

METHODS OF FORMING DISLOCATION ENHANCED STRAIN IN NMOS AND PMOS STR...

METHODS OF FORMING DISLOCATION ENHANCED STRAIN IN NMOS AND PMOS STR...

FIELD EFFECT TRANSISTORS WITH GATE ELECTRODE SELF-ALIGNED TO SEMICO...

METHODS OF FORMING DISLOCATION ENHANCED STRAIN IN NMOS AND PMOS STR...

FINFET TRANSISTOR HAVING A DOPED SUBFIN STRUCTURE TO REDUCE CHANNEL...

BACKSIDE SOURCE/DRAIN REPLACEMENT FOR SEMICONDUCTOR DEVICES WITH ME...

FIELD EFFECT TRANSISTORS WITH GATE ELECTRODE SELF-ALIGNED TO SEMICO...

HIGH-MOBILITY FIELD EFFECT TRANSISTORS WITH WIDE BANDGAP FIN CLADDING

NANOWIRE FOR TRANSISTOR INTEGRATION

METHODS OF FORMING DOPED SOURCE/DRAIN CONTACTS AND STRUCTURES FORME...

AN INDIUM-CONTAINING FIN OF A TRANSISTOR DEVICE WITH AN INDIUM-RICH...

A FINFET TRANSISTOR HAVING A TAPERED SUBFIN STRUCTURE

METHODS OF FORMING DISLOCATION ENHANCED STRAIN IN NMOS STRUCTURES

BACKSIDE SOURCE/DRAIN REPLACEMENT FOR SEMICONDUCTOR DEVICES WITH ME...

GROUP III-V MATERIAL TRANSISTORS EMPLOYING NITRIDE-BASED DOPANT DIF...

INDIUM-RICH NMOS TRANSISTOR CHANNELS

SEMICONDUCTOR DEVICE WITH RELEASED SOURCE AND DRAIN

BACKSIDE CONTACT RESISTANCE REDUCTION FOR SEMICONDUCTOR DEVICES WIT...

HIGH-MOBILITY SEMICONDUCTOR SOURCE/DRAIN SPACER

III-V FINFET TRANSISTOR WITH V-GROOVE S/D PROFILE FOR IMPROVED ACCE...

A FINFET TRANSISTOR HAVING A DOPED SUBFIN STRUCTURE TO REDUCE CHANN...

BEADED FIN TRANSISTOR

TECHNIQUES FOR FORMING TRANSISTORS INCLUDING GROUP III-V MATERIAL N...

APPARATUS AND METHODS TO CREATE AN ACTIVE CHANNEL HAVING INDIUM RIC...

DOPANT DIFFUSION BARRIER FOR SOURCE/DRAIN TO CURB DOPANT ATOM DIFFU...

ETCHING FIN CORE TO PROVIDE FIN DOUBLING

GEOMETRY TUNING OF FIN BASED TRANSISTOR

CRYSTALLIZED SILICON CARBON REPLACEMENT MATERIAL FOR NMOS SOURCE/DR...

TRANSISTOR INCLUDING TENSILE-STRAINED GERMANIUM CHANNEL