Chang Ho Maeng

Person

Clifton Park, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Methods of forming field effect transistors (FETS) with gate cut is...
- Patent number 10,090,402
- Issue date Oct 2, 2018
- GLOBALFOUNDRIES Inc.
- Chanro Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Siloxane and organic-based MOL contact patterning
- Patent number 10,056,458
- Issue date Aug 21, 2018
- GLOBALFOUNDRIES Inc.
- Chang Ho Maeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded silicon carbide block patterning
- Patent number 9,922,972
- Issue date Mar 20, 2018
- GLOBALFOUNDRIES Inc.
- Xiaofeng Qiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxidizing filler material lines to increase width of hard mask lines
- Patent number 9,852,900
- Issue date Dec 26, 2017
- GLOBALFOUNDRIES Inc.
- Shivaji Peddeti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures with coplanar recessed gate layers and fab...
- Patent number 9,252,238
- Issue date Feb 2, 2016
- Lam Research Corporation
- Kristina Trevino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits having replacement metal gates with improved th...
- Patent number 9,147,680
- Issue date Sep 29, 2015
- GLOBALFOUNDRIES, INC.
- Kristina Trevino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective removal of gate structure sidewall(s) to facilitate sidew...
- Patent number 8,993,445
- Issue date Mar 31, 2015
- GLOBALFOUNDRIES Inc.
- Dae-Han Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing gate height variance during semiconductor device formation
- Patent number 8,900,940
- Issue date Dec 2, 2014
- GLOBALFOUNDRIES Inc.
- Ashish K. Jha
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
OXIDIZING FILLER MATERIAL LINES TO INCREASE WIDTH OF HARD MASK LINES
- Publication number 20180040477
- Publication date Feb 8, 2018
- GLOBALFOUNDRIES INC.
- Shivaji PEDDETI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OXIDIZING FILLER MATERIAL LINES TO INCREASE WIDTH OF HARD MASK LINES
- Publication number 20170294304
- Publication date Oct 12, 2017
- GLOBALFOUNDRIES INC.
- Shivaji PEDDETI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILOXANE AND ORGANIC-BASED MOL CONTACT PATTERNING
- Publication number 20170200792
- Publication date Jul 13, 2017
- GLOBALFOUNDRIES INC.
- Chang Ho MAENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR PRODUCING INTEGRATED CIRCUITS WITH AIR GAPS AND INTEGRA...
- Publication number 20170162430
- Publication date Jun 8, 2017
- GLOBALFOUNDRIES, Inc.
- Xintuo Dai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES WITH COPLANAR RECESSED GATE LAYERS AND FAB...
- Publication number 20160049495
- Publication date Feb 18, 2016
- LAM RESEARCH CORPORATION
- Kristina TREVINO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS HAVING REPLACEMENT METAL GATES WITH IMPROVED TH...
- Publication number 20150021694
- Publication date Jan 22, 2015
- GLOBALFOUNDRIES, INC.
- Kristina Trevino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING INTEGRATED CIRCUITS WITH REDUCED REPLACEMENT ME...
- Publication number 20150024584
- Publication date Jan 22, 2015
- GLOBAL FOUNDRIES, INC.
- Gabriel Padron Wells
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE REMOVAL OF GATE STRUCTURE SIDEWALL(S) TO FACILITATE SIDEW...
- Publication number 20140199845
- Publication date Jul 17, 2014
- GLOBALFOUNDRIES, Inc.
- Dae-Han CHOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING GATE HEIGHT VARIANCE DURING SEMICONDUCTOR DEVICE FORMATION
- Publication number 20140193957
- Publication date Jul 10, 2014
- GLOBALFOUNDRIES INC.
- Ashish K. Jha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SEMICONDUCTOR FINS
- Publication number 20140148011
- Publication date May 29, 2014
- GLOBALFOUNDRIES INC.
- Dae-han Choi
- H01 - BASIC ELECTRIC ELEMENTS

Chang Ho Maeng

Person

Patents Grantslast 30 patents

Methods of forming field effect transistors (FETS) with gate cut is...

Siloxane and organic-based MOL contact patterning

Embedded silicon carbide block patterning

Oxidizing filler material lines to increase width of hard mask lines

Semiconductor structures with coplanar recessed gate layers and fab...

Integrated circuits having replacement metal gates with improved th...

Selective removal of gate structure sidewall(s) to facilitate sidew...

Reducing gate height variance during semiconductor device formation

Patents Applicationslast 30 patents

OXIDIZING FILLER MATERIAL LINES TO INCREASE WIDTH OF HARD MASK LINES

OXIDIZING FILLER MATERIAL LINES TO INCREASE WIDTH OF HARD MASK LINES

SILOXANE AND ORGANIC-BASED MOL CONTACT PATTERNING

METHODS FOR PRODUCING INTEGRATED CIRCUITS WITH AIR GAPS AND INTEGRA...

SEMICONDUCTOR STRUCTURES WITH COPLANAR RECESSED GATE LAYERS AND FAB...

INTEGRATED CIRCUITS HAVING REPLACEMENT METAL GATES WITH IMPROVED TH...

METHODS FOR FORMING INTEGRATED CIRCUITS WITH REDUCED REPLACEMENT ME...

SELECTIVE REMOVAL OF GATE STRUCTURE SIDEWALL(S) TO FACILITATE SIDEW...

REDUCING GATE HEIGHT VARIANCE DURING SEMICONDUCTOR DEVICE FORMATION

METHOD OF FORMING SEMICONDUCTOR FINS