Chang-Po Hsiung

Person

Hsinchu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Manufacturing method of high voltage semiconductor device
- Patent number 12,080,794
- Issue date Sep 3, 2024
- United Microelectronics Corp.
- Tsung-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure
- Patent number 11,735,586
- Issue date Aug 22, 2023
- United Microelectronics Corp.
- Chang-Po Hsiung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage semiconductor device and manufacturing method thereof
- Patent number 11,682,726
- Issue date Jun 20, 2023
- United Microelectronics Corp.
- Tsung-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,495,681
- Issue date Nov 8, 2022
- United Microelectronics Corp.
- Chang-Po Hsiung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried channel metal-oxide-semiconductor field-effect transistor (M...
- Patent number 11,437,512
- Issue date Sep 6, 2022
- United Microelectronics Corp.
- Chang-Po Hsiung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor transistor and fabrication method thereof
- Patent number 11,217,693
- Issue date Jan 4, 2022
- United Microelectronics Corp.
- Chang-Po Hsiung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming transistor with dual spacer
- Patent number 10,475,903
- Issue date Nov 12, 2019
- United Microelectronics Corp.
- Chia-Ling Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with dual spacer and forming method thereof
- Patent number 10,453,938
- Issue date Oct 22, 2019
- United Microelectronics Corp.
- Chia-Ling Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,411,088
- Issue date Sep 10, 2019
- United Microelectronics Corp.
- Chang-Po Hsiung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage transistor and fabrication method thereof
- Patent number 10,276,710
- Issue date Apr 30, 2019
- United Microelectronics Corp.
- Shin-Hung Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming the same
- Patent number 9,972,678
- Issue date May 15, 2018
- United Microelectronics Corp.
- Chang-Po Hsiung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device with shallow trench is...
- Patent number 9,653,343
- Issue date May 16, 2017
- UNITED MOCIROELECTRONICS CORP.
- Kai-Kuen Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor MOS device
- Patent number 9,577,069
- Issue date Feb 21, 2017
- United Microelectronics Corp.
- Shih-Chieh Pu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure
- Patent number 9,472,661
- Issue date Oct 18, 2016
- United Microelectronics Corp.
- Shih-Yin Hsiao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20230352478
- Publication date Nov 2, 2023
- UNITED MICROELECTRONICS CORP.
- Chang-Po Hsiung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF HIGH VOLTAGE SEMICONDUCTOR DEVICE
- Publication number 20230335637
- Publication date Oct 19, 2023
- UNITED MICROELECTRONICS CORP.
- Tsung-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE SEMICONDUCTOR DEVICE
- Publication number 20230335638
- Publication date Oct 19, 2023
- UNITED MICROELECTRONICS CORP.
- Tsung-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20230140347
- Publication date May 4, 2023
- UNITED MICROELECTRONICS CORP.
- Chang-Po Hsiung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20220209009
- Publication date Jun 30, 2022
- UNITED MICROELECTRONICS CORP.
- Tsung-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20220208760
- Publication date Jun 30, 2022
- UNITED MICROELECTRONICS CORP.
- Chang-Po Hsiung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20220085210
- Publication date Mar 17, 2022
- UNITED MICROELECTRONICS CORP.
- Chang-Po Hsiung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BURIED CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR (M...
- Publication number 20210399132
- Publication date Dec 23, 2021
- UNITED MICROELECTRONICS CORP.
- Chang-Po Hsiung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR TRANSISTOR AND FABRICATION METHOD THEREOF
- Publication number 20210167208
- Publication date Jun 3, 2021
- UNITED MICROELECTRONICS CORP.
- Chang-Po Hsiung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH DUAL SPACER AND FORMING METHOD THEREOF
- Publication number 20190157418
- Publication date May 23, 2019
- UNITED MICROELECTRONICS CORP.
- Chia-Ling Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING TRANSISTOR WITH DUAL SPACER
- Publication number 20190157421
- Publication date May 23, 2019
- UNITED MICROELECTRONICS CORP.
- Chia-Ling Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR TRANSISTOR DEVICE
- Publication number 20190103460
- Publication date Apr 4, 2019
- United Microelectronics Corp.
- Chang-Po Hsiung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20180233556
- Publication date Aug 16, 2018
- United Microelectronics Corp.
- Chang-Po Hsiung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20180102408
- Publication date Apr 12, 2018
- United Microelectronics Corp.
- Chang-Po Hsiung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLASH CELL AND FLASH CELL SET
- Publication number 20160133635
- Publication date May 12, 2016
- UNITED MICROELECTRONICS CORP.
- Chang-Po Hsiung
- H01 - BASIC ELECTRIC ELEMENTS

Chang-Po Hsiung

Person

Patents Grantslast 30 patents

Manufacturing method of high voltage semiconductor device

Semiconductor structure

High voltage semiconductor device and manufacturing method thereof

Semiconductor device and manufacturing method thereof

Buried channel metal-oxide-semiconductor field-effect transistor (M...

Semiconductor transistor and fabrication method thereof

Method of forming transistor with dual spacer

Transistor with dual spacer and forming method thereof

Semiconductor device

High voltage transistor and fabrication method thereof

Semiconductor device and method of forming the same

Method of manufacturing semiconductor device with shallow trench is...

Method of fabricating semiconductor MOS device

Semiconductor structure

Patents Applicationslast 30 patents

SEMICONDUCTOR STRUCTURE

MANUFACTURING METHOD OF HIGH VOLTAGE SEMICONDUCTOR DEVICE

HIGH VOLTAGE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

HIGH VOLTAGE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR STRUCTURE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

BURIED CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR (M...

SEMICONDUCTOR TRANSISTOR AND FABRICATION METHOD THEREOF

TRANSISTOR WITH DUAL SPACER AND FORMING METHOD THEREOF

METHOD OF FORMING TRANSISTOR WITH DUAL SPACER

SEMICONDUCTOR TRANSISTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

FLASH CELL AND FLASH CELL SET